JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC350
FEATURES
Power dissipation
P
CM
: 0.3 W（Tamb=25℃）
Collector current
I
CM
:
-0.1 A
Collector-base voltage
V
(BR)CBO
: -50 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless
TRANSISTOR (PNP)
TO—92
1.EMITTER
2. BASE
3. COLLECTOR
1 2 3
otherwise
specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
BEsat
Test
conditions
MIN
-50
-45
-5
TYP
MAX
UNIT
V
V
V
Ic= -100μA
，
I
E
=0
I
C
= -1mA, IB=0
I
E
= -100μA， I
C
=0
V
CB
=-50V, I
E
=0
V
CE
=-35V, I
B
=0
V
EB
= -3V, I
C
=0
V
CE
=-5 V, I
C
= -2mA
I
C
= -10mA, I
B
= -1mA
I
C
= -10mA, I
B
= -1mA
V
CE
=-5 V,I
C
=-10mA,
f=30MHz
-0.1
-0.1
-0.1
40
450
-0.3
-1
125
μA
μA
μA
V
V
MHz
f
T
TO-92 PACKAGE OUTLINE DIMENSIONS
D
D1
A
A1
E
b
φ
e
e1
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
Dimensions In Millimeters
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
1.270TYP
2.440
14.100
0.000
2.640
14.500
1.600
0.380
4.700
Max
3.700
1.400
0.550
0.510
4.700
Min
L
Dimensions In Inches
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.050TYP
0.096
0.555
0.000
0.104
0.571
0.063
0.015
0.130
0.043
0.015
0.014
0.173
0.135
0.169
C
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