BC807 SERIES
PNP GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
• General purpose amplifier applications
.007(.20)MIN
45 Volts
POWER
225 mWatts
SOT- 23
Unit: inch (mm)
• PNP epitaxial silicon, planar design
.056(1.40)
.047(1.20)
.119(3.00)
.110(2.80)
• Collector current I
C
= 500mA
• In compliance with EU RoHS 2002/95/EC directives
.103(2.60)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
.083(2.10)
.066(1.70)
.006(.15)
.002(.05)
.044(1.10)
Device Marking : BC807-16 : 7A
BC807-25 : 7B
BC807-40 : 7C
Top View
3
Collector
1
BASE
3
COLLECTOR
.006(.15)MAX
.020(.50)
.013(.35)
1
Base
2
Emitter
2
EMITTER
MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Max Power Dissipation (Note 1)
Junction and Storage Temperature
Range
THERMAL CHARACTERISTICS
SYMBOL
V
C EO
V
C BO
V
EBO
I
C
P
TOT
T
J
, T
STG
Value
-45
-50
-5.0
-500
225
-55 to 150
.035(0.90)
Approx. Weight: 0.008 gram
.086(2.20)
UNIT
v
v
v
mA
mW
o
C
PARAMETER
Thermal Resistance , Junction to Ambient
SYMBOL
R
θ
JA
Value
556
UNIT
o
C /W
Note 1 : Transistor mounted on FR-4 board 70x60x1mm.
REV.0.0-FEB.12.2009
PAGE . 1
ELECTRICAL CHARACTERISTICS(T
J
=25
o
C,unless otherwise notes)
PARAMETER
Collector-Emitter Breakdown Voltage (Ic=-10mA,
I
B
=0)
Collector-Emitter Breakdown Voltage (V
EB
=
0V, Ic=-100uA
Emitter-Base Breakdown Voltage (I
E
=-
10uA,Ic=0)
Emitter-Base Cutoff Current (V
EB
=-4V)
Collector-Base Cutoff Current (V
CB
=-20V,I
E
=0)
O
T
J
=25 C
O
T
J
=150 C
SYMBOL
V
(BR)
CEO
V
(BR)
CES
V
(BR)
EBO
I
EBO
MIN.
-45
-50
-5.0
-
-
-
TYP.
-
-
-
-
MAX.
-
-
-
-100
-0.1
UNIT
V
V
V
nA
nA
uA
I
C BO
-
-5.0
-
-
-
-
DC Current Gain
(Ic=-100mA,V
CE
=-1V)
BC807-16
BC807-25
BC807-40
h
FE
100
160
250
40
250
400
600
-
-
(Ic=-500mA,Vc
E
=-1V)
Collector-Emitter Saturation Voltage (Ic=-500mA ,I B
=
-50mA)
Base-Emitte Voltage (Ic=-500mA,V
CE
=-
1.0V)
Collector-Base Capacitance (V
CB
=-10v,I
E
=0,f=1MHz)
Current Gain-Bandwidth Product (Ic=-10mA,Vc
E=-
5V,f=100MHz)
V
CE(SAT)
V
BE(ON)
C
C BO
f
T
-
-
-
100
-
-
7.0
-
-0.7
-1.2
-
-
V
V
pF
MHz
ELECTRICAL CHARACTERISTICS CURVES
1000
1000
T
J
= 150°C
T
J
= 150°C
T
J
= 25°C
hFE
hFE
100
T
J
= 100°C
T
J
= 25°C
100
T
J
= 100°C
V
CE
= 1V
10
0.01
0.1
1
10
100
1000
10
0.01
0.1
V
CE
= 1V
1
10
100
1000
Colle ctor Cur r e nt, I
C
(m A)
Colle ctor Cur r e nt, I
C
(m A)
Fig. 1.
1000
BC807-16 Typical h
FE
vs. I
C
T
J
= 150°C
T
J
= 25°C
Capacitance, C (pF
Fig. 2.
100
BC807-25 Typical h
FE
vs. I
C
C
IB
(EB)
hFE
100
T
J
= 100°C
10
C
OB
(EB)
V
CE
= 1V
10
0.01
0.1
1
10
100
1000
1
0.1
1
10
100
Colle ctor Curre nt, I
C
(m A)
Reverse Voltage, V
R
(V)
Fig. 3.
BC807-40 Typical h
FE
vs. I
C
Fig. 4.
Typical Capacitances
REV.0.0-FEB.12.2009
PAGE . 2
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.0-FEB.12.2009
PAGE . 3
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