JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BC807
FEATURE
Ldeally suited for automatic insertion
Epitaxial planar die construction
Complementary NPN type available(BC817)
1. BASE
2. EMITTER
3. COLLECTOR
TRANSISTOR (PNP)
SOT-23
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-45
-5
-0.5
0.3
150
-55-150
Unit
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)
V
BE(sat)
T est conditions
I
C
= -10
μ
A, I
E
=0
I
C
= -10mA, I
B
0
=
I
E
= -1
μ
A, I
C
=0
V
CB
= -45V, I
E
0
=
V
CE
= -40V, I
B
0
=
V= 0
EB
= -4 V, I
C
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -500mA
I
C
=-500mA, I
B
= -50mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -5V, I
C
= -10mA
100
100
40
-0.7
-1.2
V
V
MHz
Min
-50
-45
-5
-0.1
-0.2
-0.1
600
Max
Unit
V
V
V
μ
A
μ
A
μ
A
f
T
f=
100MHz
CLASSIFICATION OF
h
FE
(1)
Rank
Range
Marking
BC807-16
100-250
5A
BC807-25
160-400
5B
BC807-40
250-600
5C
D,Aug,2013
Typical Characteristics
-
280
(mA)
-
240
-
200
-
160
-
120
-
80
-
40
I
B
=-0.1mA
0
0
BC807
h
FE
—— I
C
T
a
=100 C
o
Static Characteristic
COMMON
-0.9mA EMITTER
T
a
=25
℃
-0.8mA
-0.7mA
-0.6mA
-0.5mA
-0.4mA
-0.3mA
-0.2mA
-1mA
-
500
-
400
h
FE
DC CURRENT GAIN
-
300
COLLECTOR CURRENT
I
C
T
a
=25 C
o
-
200
V
CE
= -1V
-
100
-
1
-
10
COLLECTOR CURRENT
I
C
-
100
(mA)
- 500
-
2
-
6
-
10
-
8
-
4
COLLECTOR-EMITTER VOLTAGE
-
12
-
14
V
CE
(V)
-
16
-1.2
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
β=10
-0.4
V
CEsat
——
I
C
β=10
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
-1.0
-0.3
-0.8
T
a
=25
℃
-0.2
-0.6
T
a
=100
℃
-0.4
-0.1
T
a
=100
℃
T
a
=25
℃
-0.2
-0.1
-1
-10
-100
- 500
-0.0
-0.1
-1
-10
-100
- 500
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
-1000
——
V
BE
100
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
T
a
=25 C
C
ib
o
I
C
(mA)
50
-100
COLLECTOR CURRENT
-10
CAPACITANCE
T
a
=100 C
T
a
=25
℃
o
C
10
(pF)
-1
C
ob
V
CE
=-1V
-0.1
-
0.3
-
0.4
-
0.5
-
0.7
-
0.8
-
0.6
BASE-EMITTER VOLTAGE
V
BE
(V)
-
0.9
-
1.0
1
0
-
5
REVERSE VOLTAGE
-
10
V
(V)
f
T
300
——
I
C
COLLECTOR POWER DISSIPATION
P
c
(W)
0.4
P
c
——
T
a
(MHz)
0.3
f
T
TRANSITION FREQUENCY
100
0.2
0.1
V
CE
=-5V
T
a
=25 C
10
o
-
1
-
10
COLLECTOR CURRENT
I
C
(mA)
- 60
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
D,Aug,2013
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