JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BC807-16LT1
BC807-25LT1
BC807-40LT1
FEATURES
Power dissipation
P
CM:
Collector current
I
CM:
Collector-base voltage
V
CBO:
0.3
-0.5
-50
W (Tamb=25℃)
A
2. 9
1. 0
2. 4
1. 3
TRANSISTOR (PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
V
1. 9
0. 95
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
0. 95
Unit: mm
unless otherwise specified)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
Test
conditions
MIN
-50
-45
-5
-0.1
-0.2
-0.1
MAX
UNIT
V
V
V
Ic= -10
µ
A, I
E
=0
Ic= -10mA, I
B
=0
I
E
= -1
µ
A, I
C
=0
V
CB
= -45V, I
E
=0
V
CE
= -40V, I
B
=0
V
EB
= -4V, I
C
=0
0. 4
µ
A
µ
A
µ
A
DC current gain
807-16
807-25
807-40
h
FE(1)
V
CE
= -1V, I
C
= -100mA
100
160
250
250
400
600
-0.7
-1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
I
C
=-500mA, I
B
= -50 mA
I
C
= -500 mA, I
B
= -50mA
V
CE
= -5 V, I
C
= -10mA
Transition frequency
f
T
f=
100MHz
100
MHz
DEVICE MARKING
BC807-16LT1=5A1; BC807-25LT1=5B; BC807-40LT1=5C
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