BC817 SERIES
NPN GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
•
General
purpose amplifier applications
•
NPN
epitaxial silicon, planar design
• Collector current I
C
= 500mA
•
Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
45 Volts
POWER
330 mW
SOT-23
Unit
：
inch(mm)
0.006(0.15)MIN.
0.103(2.60)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0003 ounces, 0.0084 grams
• Device Marking : BC817-16 : 8A
BC817-25 : 8B
BC817-40 : 8C
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
0.004(0.10)MAX.
MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Total Power Dissipation ( NOTE )
Junction and Storage Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
P
TOT
T
J
, T
STG
Value
45
50
5.0
500
330
-55 to +150
UNIT
V
V
V
mA
mW
o
C
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance Junction to Ambient ( NOTE )
Thermal Resistance Junction to Lead
SYMBOL
R
JA
R
JL
Value
375
220
UNIT
o
C
o
C
0.086(2.20)
/W
/W
NOTE : Transistor mounted on FR-5 board minimum pad mounting conditions.
March 09,2011-REV.02
PAGE . 1
BC817 SERIES
ELECTRICAL CHARACTERISTICS ( T
J
=25
o
C,unless otherwise notes )
PARAMETER
Collector-Emitter Breakdown Voltage ( Ic=10mA, IB=0 )
Collector-Base Breakdown Voltage ( V
EB
=0V, Ic=10A )
Emitter-Base Breakdown Voltage ( I
E
=1A, Ic=0 )
Emitter-Base Cutoff Current ( V
EB
=5V )
Collector-Base Cutoff Current ( V
CB
=20V, I
E
=0 )
DC Current Gain ( Ic=100mA, V
CE
=1V )
DC Current Gain ( Ic=500mA, V
CE
=1V )
T
J
=25
o
C
T
J
=150
o
C
BC817-16
BC817-25
BC817-40
SYMBOL
V
(BR)
CEO
V
(BR)
CBO
V
(BR)
EBO
I
EBO
I
CBO
MIN.
45
50
5.0
-
-
-
100
160
250
40
-
-
-
100
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
7.0
-
MAX.
-
-
-
100
100
5.0
250
400
600
-
0.7
1.2
-
-
UNIT
V
V
V
nA
nA
A
h
FE
V
CE(SAT)
V
BE(ON)
C
CBO
f
T
-
V
V
pF
MHz
Collector-Emitter Saturation Voltage ( Ic=500mA, I
B
=50mA )
Base-Emitte Voltage ( Ic=500mA, V
CE
=1.0V )
Collector-Base Capacitance (V
CB
=10V, I
E
=0, f=1MHz)
Current Gain-Bandwidth Product ( Ic=10mA, V
CE
=5V, f=100MHz )
300
250
200
450
400
350
300
hFE
150
100
50
0
0.01
V
CE
= 1V
0.1
1
10
100
1000
hFE
250
200
150
100
50
0
0.01
0.1
1
V
CE
= 1V
10
100
1000
Colle ctor Cur r e nt
,
I
C
(
m A
)
Colle ctor Cur r e nt
,
I
C
(
m A
)
Fig.1 BC817-16 Typical h
FE
vs. I
C
Fig.2 BC817-25 Typical h
FE
vs. I
C
700
600
500
400
300
200
100
0
0.01
0.1
1
10
100
1000
C
CB
, C
CB
(
P
F)
100
C
IB
(EB)
hFE
10
C
OB
(EB)
V
CE
= 1V
1
0.1
1
V
CB
, V
EB
(V)
10
100
Colle ctor Curre nt
,
I
C
(
m A
)
Fig.3 BC817-40 Typical h
FE
vs. I
C
March 09,2011-REV.02
Fig.4 Typical Capacitances
PAGE . 2
BC817 SERIES
MOUNTING PAD LAYOUT
SOT-23
0.035 MIN.
(0.90) MIN.
Unit
：
inch(mm)
0.031 MIN.
(0.80) MIN.
0.043
(1.10)
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
March 09,2011-REV.02
0.078
(2.00)
PAGE .
3
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