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BC846BPNT/R7

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6

器件类别:分立半导体    晶体管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
SMALL OUTLINE, R-PDSO-G6
针数
6
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
65 V
配置
SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)
200
JESD-30 代码
R-PDSO-G6
元件数量
2
端子数量
6
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
NPN AND PNP
最大功率耗散 (Abs)
0.225 W
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
文档预览
BC846BPN
DUAL SURFACE MOUNT NPN/PNP TRANSISTORS (COMPLIMENTARY)
This device contains two electrically-isolated complimentary pair (NPN and PNP)general-purpose
transistors. This device is ideal for portable applications where board space is at a premium.
VOLTAGE
FEATURES
• General purpose amplifier applications
• Collector current Ic = 100mA
• In compliance with EU RoHS 2002/95/EC directives
0.087(2.20)
0.074(1.90)
0.010(0.25)
65 Volts
POWER
225 mWatts
0.018(0.45)
0.006(0.15)
0.010(0.25)
0.003(0.08)
MECHANICAL DATA
Case: SOT-363, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.006 gram
Marking :46P
0.054(1.35)
0.045(1.15)
0.030(0.75)
0.021(0.55)
0.056(1.40)
0.047(1.20)
0.040(1.00)
0.031(0.80)
0.012(0.30)
0.005(0.15)
ABSOLUTE RATINGS
NPN
Parameter
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
65
80
6.0
100
Units
V
V
V
mA
PNP
Parameter
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-65
-80
-5.0
-100
Units
V
V
V
mA
April.25.2011-REV.00
0.044(1.10)
MAX.
0.087(2.20)
0.078(2.00)
PAGE . 1
BC846BPN
THERMAL CHARACTERISTICS
Parameter
Max .Total Power Dissipation
Junction Temperature range
Storage Temperature range
Symbol
P
TOT
T
J
T
STG
Value
225
-55 to 150
-55 to 150
Units
mW
O
C
C
O
ELECTRICAL CHARACTERISTICS
NPN
P ara me te r
C o lle c to r - E mi tter B rea k do wn Volta ge
C o lle c to r - B a s e B rea k do wn Vo lta ge
E mi tte r - B a s e B re a k do wn Vo lta ge
C o lle c to r-B as e C utoff C urre nt
D C C urrent Ga i n
C o lle c to r - E mi tter S a turati o n Volta g e
B as e - E mi tter S a tura ti on Volta g e
Ga i n-B a nd wi d th P ro duc t
S ymbo l
V
(B R)C E O
V
(B R)C B O
V
(B R)E B O
I
C BO
Te s t C ond i ti o n
Ic =1 0mA
I
C
=1 0uA ,V
E B
=0
I
E
=1.0uA
V
C B
= 30 V, I
E
=0
I
C
= 2 .0 mA , V
C E
=5V
Ic = 1 0mA , I
B
=0 .5 mA
I
C
= 1 00 mA , I
B
=5 .0 mA
I
C
= 1 0mA , I
B
=0 .5 mA
V
C E
= 5V, I
C
=1 0 mA
f=1 00 MH
Z
MIN.
65
80
6 .0
-
2 00
-
0 .6
1 00
TYP.
-
-
-
-
-
-
-
-
MA X .
-
-
-
15
4 50
0 .2 5
0 .6
0 .9
-
Uni ts
V
V
V
nA
-
V
V
MH
Z
h
FE
V
C E (S AT)
V
B E (S AT)
f
T
PNP
P a ra me te r
C o lle c to r - E m i tte r B re a k d o wn Vo lta g e
C o lle c to r - B a s e B re a k d o wn Vo lta g e
E mi tte r - B a s e B r e a k d o wn Vo lta g e
C o lle c to r-B a s e C uto ff C urre nt
D C C ur re nt Ga i n
C o lle c to r - E m i tte r S a tur a ti o n Vo lta g e
B a s e - E mi tte r S a tur a ti o n Vo lta g e
Ga i n-B a nd wi d th P ro d uc t
S ymb o l
V
(B R)C E O
V
(B R)C B O
V
(B R)E B O
I
CBO
Te s t C o nd i ti o n
I
C
=- 1 0 mA
I
C
=- 1 0 uA ,V
E B
=0
I
E
=-1 .0 uA
V
C B
= -3 0 V, I
E
=0
I
C
= - 2 .0 mA , V
C E
=-5 V
I
C
= - 1 0 mA , I
B
=-0 .5 mA
I
C
= - 1 0 0 mA , I
B
=-5 .0 mA
I
C
= - 1 0 mA , I
B
=-0 .5 mA
V
C E
= -5 V, I
C
=-1 0 mA
f=1 0 0 MH
Z
MIN.
-6 5
-8 0
-5 .0
-
220
-
-0 .6
100
TYP.
-
-
-
-
-
-
-
-
MAX.
-
-
-
-1 5
475
-0 .3
-0 .6 5
-0 .9
-
Uni ts
V
V
V
nA
-
V
V
MH
Z
h
F E
V
C E (S AT)
V
B E (S AT)
f
T
April.25.2011-REV.00
PAGE . 2
BC846BPN
NPN
ELECTRICAL CHARACTERISTICS CURVE
1.2
I
C
/I
B
= 20
1.0
1
I
C
/I
B
= 20
V
BE(SAT)
(V)
0.8
0.6
0.4
T
J
= 25°C
V
CE(SAT)
(V)
T
J
= 150°C
0.1
T
J
= 25°C
T
J
= 150°C
0.2
0.1
1
10
100
0.01
0.1
1
10
100
I
C
, Collector Current (mA)
I
C
, Collector Current (mA)
Fig.1 Base-Emitter Saturation Voltage
800
Fig.2 Collector-Emitter Saturation Voltage
1
H
FE
, DC Current Gain
V
CE
= 5V
600
T
J
= 150°C
400
0.8
T
J
= 25°C
V
CE
= 5V
V
BE(on)
(V)
0.6
200
0.4
T
J
= 150°C
0.2
0.1
1
10
100
T
J
= 75°C
T
J
= 25°C
0
0.1
1
10
100
1000
I
C
, Collector Current (mA)
I
C
, Collector Current (mA)
Fig.3 DC Current Gain
Fig.4 Base-Emitter Voltage
PNP
ELECTRICAL CHARACTERISTICS CURVE
-1.2
I
C
/I
B
= 20
-1.0
-1
I
C
/I
B
= 20
V
BE(SAT)
(V)
-0.8
-0.6
-0.4
V
CE(SAT)
(V)
T
J
= 25°C
T
J
= 150°C
-0.1
T
J
= 25°C
T
J
= 150°C
-0.2
-0.1
-1
-10
-100
-0.01
-0.1
-1
-10
-100
I
C
, Collector Current (mA)
I
C
, Collector Current (mA)
Fig.1 Base-Emitter Saturation Voltage
800
Fig.2 Collector-Emitter Saturation Voltage
-1
H
FE
, DC Current Gain
V
CE
= -5V
600
T
J
= 150°C
-0.8
T
J
= 25°C
V
CE
= -5V
V
BE(on)
(V)
400
-0.6
200
T
J
= 75°C
T
J
= 25°C
-0.4
T
J
= 150°C
-0.2
0
-0.1
-1
-10
-100
-1000
-0.1
-1
-10
-100
I
C
, Collector Current (mA)
I
C
, Collector Current (mA)
Fig.3 DC Current Gain
April.25.2011-REV.00
Fig.4 Base-Emitter Voltage
PAGE . 3
BC846BPN
MOUNTING PAD LAYOUT
SOT-363
Unit:inch(mm)
0.018
(0.45)
0.020
(0.50)
0.026
(0.65)
0.026
(0.65)
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2011
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
April.25.2011-REV.00
0.075
(1.90)
PAGE .
4
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