JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-523 Plastic-Encapsulate Transistors
BC847AT, BT, CT
TRANSISTOR (NPN)
SOT-523
FEATURES
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
1. BASE
2. EMITTER
3. COLLECTOR
MARKING:
BC847AT=1E; BC847BT=1F; BC847CT=1G
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
J
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
50
45
6
0.1
150
150
-55-150
Unit
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cutoff Current
DC current gain
BC847AT
BC847BT
BC847CT
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter
voltage
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
ob
BC847BT
BC847CT
NF
I
C
=10mA, I
B
=0. 5mA
I
C
=100mA, I
B
= 5mA
I
C
=10mA, I
B
=0. 5mA
I
C
=100mA, I
B
= 5mA
V
CE
= 5V, I
C
= 2mA
V
CE
= 5V, I
C
= 10mA
V
CE
= 5 V,
f=100MHz
V
CB
=10V,f=1MHz
V
CE
=5V,f=1KHZ,
R
S
=2KΩ,BW=200HZ
I
C
= 10mA
100
4.5
10
4
580
0.7
0.9
660
700
770
h
FE
V
CE
= 5V, I
C
= 2mA
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
= 10µA, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 1 µA, I
C
=0
V
CB
=30V
110
200
420
Min
50
45
6
15
220
450
800
0.25
0.6
V
V
V
MHz
pF
dB
Typ
Max
Unit
V
V
V
nA
Transition frequency
Collector output capacitance
Noise figure
A,May,2011
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