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BC856AWT/R13

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

器件类别:分立半导体    晶体管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
compliant
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
65 V
配置
SINGLE
最小直流电流增益 (hFE)
110
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
200 MHz
文档预览
BC856AW ~ BC859CW
PNP GENERAL PURPOSE TRANSISTORS
VOLTAGE
FEATURES
0.087(2.20)
0.078(2.00)
30/45/65 Volts
CURRENT
200 mWatts
• PNP epitaxial silicon, planar design
• Collector current I
C
= 100mA
• Complimentary (NPN) Devices:BC846W/BC847W/BC848W/
BC849W Series
• In compliance with EU RoHS 2002/95/EC directives
0.087(2.20)
0.070(1.80)
0.054(1.35)
0.045(1.15)
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0001 ounce, 0.005 gram
0.016(0.40)
0.008(0.20)
0.004(0.10)MAX.
0.044(1.10)
0.035(0.90)
Device Marking:
BC856AW=56A
BC856BW=56B
BC857AW=57A
BC857BW=57B
BC857CW=57C
BC858AW=58A
BC858BW=58B
BC858CW=58C
BC859BW=59B
BC859CW=59C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector - Emitter Voltage
BC856W
BC857W
BC858W, BC859W
BC856W
BC857W
BC858W, BC859W
BC856W
BC857W
BC858W, BC859W
Symbol
V
CEO
Value
-65
-45
-30
-80
-50
-30
6.0
6.0
-5.0
-100
200
-55 to 150
-55 to 150
Units
V
0.004(0.10)MIN.
• General purpose amplifier applications
Collector - Base Voltage
V
CBO
V
Emitter - Base Voltage
Collector Current - Continuous
Max Power Dissipation (Note 1)
Storage Temperature Range
Junction Temperature Range
V
EBO
I
C
P
TOT
T
STG
T
J
V
mA
mW
O
C
C
O
December 17,2010-REV.00
PAGE . 1
BC856AW ~ BC859CW
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Value
UNIT
Thermal Resistance
R
θJA
R
θJC
400
100
O
C/W
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
ELECTRICAL CHARACTERISTICS (T
J
=25
O
C, unless otherwise noted)
PA RA M E TE R
C o lle c to r - E m i tte r B re a k d o wn Vo lta g e
( I
C
= - 1 0 mA , I
B
= 0 )
C o lle c to r - B a s e B re a k d o wn Vo lta g e
( I
C
= - 1 0
μ
A , I
E
= 0 )
E mi tte r -B a s e B re a k d o w n Vo lta g e
( I
E
= - 1 uA , I
C
= 0 )
E mi tte r -B a s e C uto ff C ur re nt
( V
E B
= -5 V )
C o lle c to r- B a s e C uto ff C ur re nt
( V
C B
= -3 0 V, I
E
= 0 )
D C C urr e nt Ga i n
( I
C
= - 1 0
μ
A , V
C E
= - 5 V )
D C C urr e nt Ga i n
( I
C
= - 2 .0 m A , V
C E
= - 5 V )
T
J
= 2 5
O
C
T
J
= 1 5 0
O
C
B C 8 5 6 ~ B C 8 5 8 S uffi x " AW "
B C 8 5 6 ~ B C 8 5 9 S uffi x " B W "
B C 8 5 7 ~ B C 8 5 9 S uffi x " C W "
B C 8 5 6 ~ B C 8 5 8 S uffi x " AW "
B C 8 5 6 ~ B C 8 5 9 S uffi x " B W "
B C 8 5 7 ~ B C 8 5 9 S uffi x " C W "
( I
C
= -1 0 m A , I
B
= - 0 .5 m A )
( I
C
= -1 0 0 m A , I
B
= - 5 .0 m A )
( I
C
= -1 0 m A , I
B
= - 0 .5 m A )
( I
C
= -1 0 0 m A , I
B
= - 5 .0 m A )
( I
C
= -2 m A , V
C E
= -5 .0 V )
( I
C
= -1 0 m A , V
C E
= -5 .0 V )
( V
C B
= -1 0 V, I
E
= 0 , f= 1 M H
Z
)
B C 8 5 6 AW,B W
B C 8 5 7 AW /B W /C W,
B C 8 5 8 AW /B W /C W,B C 8 5 9 B W /C W
B C 8 5 6 AW,B W
B C 8 5 7 AW /B W /C W,
B C 8 5 8 AW /B W /C W,B C 8 5 9 B W /C W
S ym b o l
MIN.
-65
-45
-30
-80
-50
-30
- 5 .0
TYP.
MAX.
Uni ts
V
( B R)
C E O
-
-
V
V
( B R)
C B O
-
-
V
V
( B R)
E B O
-
-
V
I
E B O
I
C B O
-
-
-1 0 0
-1 5
- 4 .0
nA
nA
μA
-
-
90
150
270
180
290
520
-
-
- 0 .7
- 0 .9
-
-
-
200
h
F E
-
-
-
h
F E
11 0
200
420
-
-
-
-
- 0 .6 0
-
-
-
220
450
800
- 0 .3
- 0 .6 5
-
-
- 0 .7 5
- 0 .8 2
4 .5
-
-
C o lle c to r - E m i tte r S a tura ti o n Vo lta g e
B a s e - E m i tte r S a tura ti o n Vo lta g e
B a s e - E m i tte r Vo lta g e
C o lle c to r - B a s e C a p a c i ta nc e
C urre nt- Ga i n- B a nd wi d th P r o d uc t
( I
C
= - 1 0 mA , V
C E
= -5 .0 V,f= 1 0 0 MH
Z
)
V
C E (S AT)
V
B E (S AT)
V
B E ( ON)
C
CB
F.
V
V
V
pF
M H
Z
December 17,2010-REV.00
PAGE . 2
BC856AW ~ BC859CW
ELECTRICAL CHARACTERISTICS CURVE
600.0
500.0
400.0
hFE
300.0
200.0
100.0
V
CE
=-5V
0.0
0.01
0.1
1
10
100
T
J
= 150˚C
BC857B
0.900
0.800
0.700
V
BE(on)
(V)
,
T
J
= 25˚C
T
J
= 100˚C
T
J
= 25˚C
0.600
0.500
0.400
0.300
0.200
0.100
0.000
0.01
T
J
= 100˚C
T
J
= 150˚C
V
CE
=-5V
0.1
1
10
100
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 1.
Typical h
FE
vs. Collector Current
Fig. 2.
Typical V
BE(ON)
vs. Collector Current
0.30
14.00
f = 100MHz
12.00
Capacitance, C (pF
0.25
10.00
8.00
6.00
4.00
2.00
0.00
C
OB
(BC)
C
IB
(EB)
0.20
V
CE(SAT)
(V)
,
T
J
= 100˚C
0.15
T
J
= 150˚C
T
J
= 25˚C
0.05
0.10
0.00
0.01
0.1
1
10
100
0.1
1
10
100
Collector Current, I
C
(mA)
Reverse Voltage, V
R
(V)
Fig. 3.
Typical V
CE(SAT)
vs. Collector Current
Fig. 5.
Typical Capacitances vs. Reverse Voltage
December 17,2010-REV.00
PAGE . 3
BC856AW ~ BC859CW
MOUNTING PAD LAYOUT
SOT-323
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2010
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
December 17,2010-REV.00
PAGE . 4
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