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BC858A

100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
100 mA, 65 V, PNP, 硅, 小信号晶体管, TO-236AB

器件类别:分立半导体    晶体管   

厂商名称:强茂(PANJIT)

厂商官网:http://www.panjit.com.tw/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
强茂(PANJIT)
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
compli
ECCN代码
EAR99
最大集电极电流 (IC)
0.1 A
集电极-发射极最大电压
30 V
配置
SINGLE
最小直流电流增益 (hFE)
110
JESD-30 代码
R-PDSO-G3
元件数量
1
端子数量
3
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
PNP
表面贴装
YES
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
标称过渡频率 (fT)
200 MHz
文档预览
BC856 SERIES
DATA SHEET
SOT- 23
Unit: inch (mm)
PNP GENERAL PURPOSE TRANSISTORS
225 mW
POWER
VOLTAGE
65/45/30 Volts
FEATURES
NPN Epitaxial Silicon, Planar Design
.056(1.40)
.119(3.00)
.110(2.80)
.103(2.60)
.083(2.10)
.066(1.70)
.006(.15)
.002(.05)
Pb free product are available : 99% Sn above can meet RoHS environment
substance directive request
MECHANICAL DATA
.044(1.10)
Case: SOT-23
Terminals : Solderable per MIL-STD-750,Method 2026
Approx Weight: 0.008 grams
Device Marking :
.006(.15)MAX
.020(.50)
.014(.35)
B C 856A =56A
B C 856B =56B
B C 857A =57A
B C 857B =57B
B C 857C =57C
B C 858A =58A
B C 858B =58B
B C 858C =58C
B C 859B =59B
B C 859C =59C
Top View
3
Collector
.035(0.90)
3
COLLECTOR
1
BASE
1
Base
2
Emitter
2
EMITTER
ABSOLUTE MAXIMUM RATINGS
PA RA M E TE R
C o lle c to r-E mi tte r Vo lta g e
C o lle c to r-B a s e Vo lta g e
E mi tte r-B a s e Vo lta g e
C o l l e c t o r C ur r e nt - C o nt i nuo us
Ma x P o we r D i s s i p a ti o n (No te 1 )
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
CEO
V
CBO
V
EBO
I
C
P
TOT
T
J
, T
S TG
BC856
-65
-80
BC857
-45
-50
-5
-100
225
BC858
BC859
-30
-30
.086(2.20)
Collector Current IC = -100mA
Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series
.047(1.20)
.007(.20)MIN
General Purpose Amplifier Applications
U N IT S
V
V
V
mA
mW
- 5 0 TO + 1 5 0
O
C
STAD-JUL.11.2005
PAGE . 1
BC856 SERIES
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance , Junction to Ambient
SYMBOL
R
ΘJA
Value
556
UNIT
O
C /W
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. Minimum pad layout.
EL ECTRICAL CHARACTERISTICS (T
J
=25 C, unless otherwise noted)
PARAMETER
Collector - Emitter Breakdown Voltage
(I
C
=-10mA, I
B
=0)
BC856A,B
BC857A,B,C V
(BR)
CE0
BC858A,B,C, BC859B,C
Collector - Base Breakdown Voltage
(I
C
=-10µA, I
E
=0)
BC856A,B
BC857A,B,C V
(BR)
CB0
BC858A,B,C, BC859B,C
Emitter - Base Breakdown Voltage
(I
E
=-1µA, I
C
=0)
V
(BR)
EB0
I
EBO
SYMBOL
MIN.
-65
-45
-30
-80
-50
-30
-5.0
-
-
T
J
=150
O
C
DC Current Gain
(I
C
=-10µA, V
CE
=-5V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
h
FE
(I
C
=-2.0mA, V
CE
=-5V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
Collector – Emitter Saturation Voltage (I
C
=-10mA, I
B
=-0.5mA)
V
CE(SAT)
(I
C
=-100mA, I
B
=-5.0mA)
Base – Emitter Saturation Voltage
(I
C
=-10mA, I
B
=-0.5mA)
V
BE(SAT)
(I
C
=-100mA, I
B
=-5.0mA)
Base – Emitter On Voltage
(I
C
=-2.0mA, V
CE
=-5.0V)
V
BE(ON)
(I
C
=-10mA, V
CE
=-5.0V)
Collector - Base Capacitance
Current-Gain - Bandwidth Product
F
T
(I
C
=-10mA, V
CE
=-5.0V, f=100MHz)
STAD-JUL.11.2005
PAGE . 2
TYP.
-
-
-
-
-
-
-
-
-
-
90
150
270
MAX.
-
-
-
-
-
-
-
-100
-15
-4.0
-
-
-
UNIT
V
V
V
nA
nA
uA
Emitter-Base Cutoff Current (V
EB
=-5V)
Collector-Base Cutoff Current (V
CB
=-30V, I
E
=0)
I
CBO
-
-
-
-
-
110
200
420
-
-
-
-
-0.60
-
180
290
520
-
-
-0.7
-0.9
-
-
-
220
450
800
-0.3
V
-0.65
-
V
-
-0.75
V
-0.82
4.5
pF
(V
CB
=-10V, I
E
=0, f=1MHz)
C
CB
-
-
200
-
MHz
BC856 SERIES
ELECTRICAL CHARACTERISTICS CURVES
600
T
J
=150 C
O
0.9
0.8
0.7
T
J
=25 C
O
500
400
hF E
V
BE(ON)
(V)
T
J
=100 C
O
0.6
0.5
0.4
0.3
T
J
=15 C
O
300
T
J
=25
O
C
T
J
=100
O
C
200
100
0
0.01
V
CE
=-5V
0.2
0.1
VCE = -5V
0.1
1
10
100
0
0.01
0.1
1
10
100
Collector Current,I
C
(mA)
Collector Current, I
C
(mA)
Fig.1- TYPICAL h
FE
vs. Collector Current
Fig.2- TYPICAL V
BE(ON)
vs. Collector Current
0.3
0.25
Capacitance,C(pF)
14
12
CIB (EB)
10
8
6
4
2
COB (BC)
V
CE(SAT)
(V)
0.2
0.15
T
J
=150 C
O
O
T
J
=100 C
0.1
0.05
0
0.01
T
J
=25 C
O
0.1
1
10
100
0
0.1
1
10
100
Collector Current,I
C
(mA)
Reverse Voltage,V
R
(V)
Fig.3- TYPICAL V
CE(SAT)
vs. Collector Current
Fig.4- TYPICAL CAPACITANCES vs. REVERSE VOLTAGE
STAD-JUL.11.2005
PAGE .
3
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
LEGAL STATEMENT
IMPORTANT NOTICE
This information is intended to unambiguously characterize the product in order to facilitate the customer's evaluation
of the device in the application. The information will help the customer's technical experts determine that the device is
compatible and interchangeable with similar devices made by other vendors. The information in this data sheet is believed
to be reliable and accurate. The specifications and information herein are subject to change without notice. New products
and improvements in products and product characterization are constantly in process. Therefore, the factory should be
consulted for the most recent information and for any special characteristics not described or specified.
Copyright Pan Jit International Inc. 2003
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright
owner.
The information presented in this document does not form part of any quotation or contract. The information presented is
believed to be accurate and reliable, and may change without notice in advance. No liability will be accepted by the
publisher for any consequence of use.Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
STAD-JUN.29.2005
PAGE . 4
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