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BC858C

100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
100 mA, 30 V, PNP, 硅, 小信号晶体管

器件类别:半导体    分立半导体   

厂商名称:Olitech Electronics

厂商官网:http://olitech-elec.com/En_index.asp

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器件参数
参数名称
属性值
端子数量
3
晶体管极性
PNP
最大集电极电流
0.1000 A
最大集电极发射极电压
30 V
加工封装描述
ROHS COMPLIANT PACKAGE-3
无铅
Yes
欧盟RoHS规范
Yes
状态
ACTIVE
包装形状
RECTANGULAR
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
GULL WING
端子涂层
NOT SPECIFIED
端子位置
DUAL
包装材料
PLASTIC/EPOXY
结构
SINGLE
元件数量
1
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
晶体管类型
GENERAL PURPOSE SMALL SIGNAL
最小直流放大倍数
420
额定交叉频率
250 MHz
文档预览
Email: info@olitech-elec.com
Website: www.olitech-elec.com
Plastic-Encapsulate Transistors
FEATURES
Ideally suited for automatic insertion
For Switching and AF Amplifier Applications
BC856A/B
(PNP)
BC857A/B/C
(PNP)
BC858A/B/C
(PNP)
Marking
BC856A
3A
BC856B
3B
BC857A
3E
BC857B
3F
BC857C
3G
BC858A
3J
BC858B
3K
BC858C
3L
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
BC856
Collector-Base Voltage
BC857
BC858
BC856
Collector-Emitter Voltage
BC857
BC858
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CBO
V
CBO
V
CEO
V
CEO
V
CEO
V
EBO
I
C
Value
-80
-50
-30
-65
-45
-30
-5
-0.1
0.2
150
-55 to +150
Unit
V
V
V
A
W
P
C
T
J
Tstg
OLITECH ELECTRONICS CO. LTD.
Page:P3-P1
Email: info@olitech-elec.com
ELECTRICAL CHARACTERISTICS (Tamb=25
Website: www.olitech-elec.com
Plastic-Encapsulate Transistors
unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC856
BC857
BC858
Symbol
VCBO
Test
conditions
Min
-80
-50
-30
-65
Max
Unit
V
IC= -10μA, IE=0
Collector-emitter breakdown voltage
BC856
BC857
BC858
VCEO
IC= -10mA, IB=0
-45
-30
V
Emitter-base breakdown voltage
Collector cut-off current
BC856
BC857
BC858
VEBO
ICBO
IE= -1μA, IC=0
VCB= -70 V , IE=0
VCB= -45 V , IE=0
VCB= -25 V , IE=0
VCE= -60 V , IB=0
-5
V
-0.1
μA
Collector cut-off current
BC856
BC857
BC858
ICEO
VCE= -40 V , IB=0
VCE= -25 V , IB=0
-0.1
μA
Emitter cut-off current
DC current gain
BC856A, 857A,858A
BC856B, 857B,858B
BC857C,BC858C
IEBO
VEB= -5 V , IC=0
125
-0.1
250
475
800
-0.5
-1.1
100
μA
hFE
VCE= -5V IC= -2mA
,
220
420
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector capacitance
VCE(sat)
VBE(sat)
fT
IC=-100mA, IB= -5 mA
IC= -100mA, IB= -5mA
VCE= -5 V IC= -10mA
,
f=100MHz
V
V
MHz
Cob
VCB=-10V
,
f=1MHz
4.5
pF
BC856A/B
BC857A/B/C
BC858A/B/C
Typical
Characteristics
OLITECH ELECTRONICS CO. LTD.
Page:P3-P2
Email: info@olitech-elec.com
BC856A/B
BC857A/B/C
BC858A/B/C
Website: www.olitech-elec.com
Plastic-Encapsulate Transistors
Typical
Characteristics
OLITECH ELECTRONICS CO. LTD.
Page:P3-P3
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参数对比
与BC858C相近的元器件有:BC856B、BC858B、BC858A、BC857B、BC857A、BC856。描述及对比如下:
型号 BC858C BC856B BC858B BC858A BC857B BC857A BC856
描述 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR 10 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
状态 ACTIVE TRANSFERRED ACTIVE TRANSFERRED ACTIVE ACTIVE ACTIVE
晶体管类型 GENERAL PURPOSE SMALL SIGNAL 通用小信号 RF SMALL SIGNAL 通用小信号 通用小信号 GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL
端子数量 3 3 - 3 3 3 3
晶体管极性 PNP PNP - PNP PNP PNP PNP
最大集电极电流 0.1000 A 0.1000 A - 0.1000 A 0.0100 A 0.1000 A 0.1000 A
最大集电极发射极电压 30 V 65 V - 65 V 45 V 45 V 65 V
加工封装描述 ROHS COMPLIANT PACKAGE-3 SOT-23, 3 PIN - SOT-23, 3 PIN - ROHS COMPLIANT PACKAGE-3 PLASTIC PACKAGE-3
无铅 Yes - - - Yes Yes Yes
欧盟RoHS规范 Yes - - - Yes Yes Yes
包装形状 RECTANGULAR 矩形的 - 矩形的 矩形的 RECTANGULAR RECTANGULAR
包装尺寸 SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
表面贴装 Yes Yes - Yes Yes Yes Yes
端子形式 GULL WING GULL WING - GULL WING GULL WING GULL WING GULL WING
端子涂层 NOT SPECIFIED - - - 锡 银 铜 NOT SPECIFIED TIN
端子位置 DUAL - DUAL DUAL
包装材料 PLASTIC/EPOXY 塑料/环氧树脂 - 塑料/环氧树脂 塑料/环氧树脂 PLASTIC/EPOXY PLASTIC/EPOXY
结构 SINGLE 单一的 - 单一的 单一的 SINGLE SINGLE
元件数量 1 1 - 1 1 1 1
晶体管应用 AMPLIFIER - - - 放大器 AMPLIFIER SWITCHING
晶体管元件材料 SILICON - SILICON SILICON
最小直流放大倍数 420 - - - 210 110 125
额定交叉频率 250 MHz 150 MHz - 150 MHz 250 MHz 200 MHz 100 MHz
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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