JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
BC868
FEATURES
High current
Low voltage
MAXIMUM RATINGS
(T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
32
20
5
1
500
150
-55~150
Unit
V
V
V
A
mW
℃
TRANSISTOR (NPN)
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
V
CE(sat)
V
BE1
Base-emitter voltage
V
BE2
Transition frequency
f
T
V
CE
=1V,I
C
=1A
V
CE
=5V,I
C
=10mA,f=100MHz
40
1
V
MHz
Test conditions
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=25V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=1V,I
C
=500mA
V
CE
=1V,I
C
=1A
V
CE
=10V,I
C
=5mA
I
C
=1A,I
B
=100mA
V
CE
=10V,I
C
=5mA
0.62
85
60
50
0.5
V
V
Min
32
20
5
0.1
0.1
375
Typ
Max
Unit
V
V
V
μA
μA
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
BC868-10
85-160
CBC
BC868-16
100-250
CCC
BC868-25
160-375
CDC
A,Jun,2011
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