JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
BCP51,52,53
FEATURES
TRANSISTOR (PNP)
SOT-223
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54...BCP56 (NPN)
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature Range
BCP51
-45
-45
BCP52
-60
-60
-5
-1
1.5
94
-65~+150
BCP53
-100
-80
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
W
℃/W
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BCP51
BCP52
BCP53
Collector-emitter breakdown voltage
BCP51
BCP52
BCP53
Base-emitter breakdown voltage
Collector cut-off current
V
(BR)EBO
I
CBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
CE(sat)
V
BE
f
T
I
C
= -10μA,I
E
=0
V
CB
= -30 V, I
E
=0
V
CE
=-2V, I
C
=-5mA
V
CE
= -2V, I
C
=-150m A
V
CE
= -2V, I
C
=-500m A
I
C
=-500mA,I
B
=-50mA
V
CE
=-2V, I
C
=-500m A
V
CE
=-10V,I
C
=-50mA,f=100MHz
100
25
63
25
-0.5
-1
V
V
MHz
250
V
(BR)CEO
I
C
= -10mA,I
B
=0
V
(BR)CBO
I
C
=- 0.1mA,I
E
=0
Symbol
Test conditions
Min
-45
-60
-100
-45
-60
-80
-5
-100
V
nA
V
V
Max
Unit
CLASSIFICATION OF h
FE(2)
Rank
Range
BCP51-10, BCP52-10, BCP53-10
63-160
BCP51-16, BCP52-16, BCP53-16
100-250
A,Jun,2011
电子工程世界
