JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
BCP54,55,56
TRANSISTOR (NPN)
SOT-223
FEATURES
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP51 ... BCP53 (PNP)
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature Range
BCP54
45
45
BCP55
60
60
5
1
1.5
94
-65~+150
BCP56
100
80
Unit
V
V
V
A
W
℃
/W
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BCP54
BCP55
BCP56
Collector-emitter breakdown voltage
BCP54
BCP55
BCP56
Base-emitter breakdown voltage
Collector cut-off current
V
(BR)EBO
I
CBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
CE(sat)
V
BE
f
T
I
C
= 10μA,I
E
=0
V
CB
= 30 V, I
E
=0
V
CE
= 2V, I
C
=5mA
V
CE
= 2V, I
C
=150m A
V
CE
= 2V, I
C
=500m A
I
C
=500mA,I
B
=50mA
V
CE
=2V, I
C
=500m A
V
CE
=10V,I
C
=50mA,f=100MHz
100
25
63
25
0.5
1
V
V
MHz
250
V
(BR)CEO
I
C
= 10mA,I
B
=0
V
(BR)CBO
I
C
= 0.1mA,I
E
=0
Symbol
Test conditions
Min
45
60
100
45
60
80
5
100
V
nA
V
V
Max
Unit
CLASSIFICATION OF h
FE(2)
Rank
Range
BCP54-10, BCP55-10, BCP56-10
63-160
BCP54-16, BCP55-16, BCP56-16
100-250
A,Jun,2011
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