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BCP56-16115

Diodes - General Purpose, Power, Switching SW DBL 75V 150MA HS

器件类别:半导体    分立半导体   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

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器件参数
参数名称
属性值
产品种类
Product Category
Bipolar Transistors - BJT
制造商
Manufacturer
NXP(恩智浦)
RoHS
Details
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
SOT-223-4
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
80 V
Collector- Base Voltage VCBO
100 V
Emitter- Base Voltage VEBO
5 V
Maximum DC Collector Current
1 A
Gain Bandwidth Product fT
180 MHz
最大工作温度
Maximum Operating Temperature
+ 150 C
高度
Height
1.7 mm
长度
Length
6.7 mm
最小工作温度
Minimum Operating Temperature
- 65 C
系列
Packaging
Reel
Pd-功率耗散
Pd - Power Dissipation
960 mW
工厂包装数量
Factory Pack Quantity
1000
宽度
Width
3.7 mm
文档预览
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
Rev. 9 — 25 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BCP56
BCX56
BC56PA
[1]
Type number
[1]
PNP complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP53
BCX53
BC53PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Low-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
[1]
Pulse test: t
p
300
s; 
= 0.02.
Conditions
open base
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
[1]
[1]
[1]
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
80
1
2
250
160
250
Unit
V
A
A
NXP Semiconductors
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
2. Pinning information
Table 3.
Pin
SOT223
1
2
3
4
base
collector
emitter
collector
1
2
3
3
sym016
Pinning
Description
Simplified outline
Graphic symbol
4
1
2, 4
SOT89
1
2
3
emitter
collector
base
3
2
1
3
1
sym042
2
SOT1061
1
2
3
base
emitter
collector
3
1
2
1
2
sym021
3
Transparent top view
3. Ordering information
Table 4.
Ordering information
Package
Name
BCP56
BCX56
BC56PA
[1]
Type number
[1]
Description
plastic surface-mounted package with increased
heatsink; 4 leads
plastic surface-mounted package; exposed die pad for
good heat transfer; 3 leads
Version
SOT223
SOT89
SOT1061
SC-73
SC-62
HUSON3 plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2
2
0.65 mm
Valid for all available selection groups.
BCP56_BCX56_BC56PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 25 October 2011
2 of 22
NXP Semiconductors
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
4. Marking
Table 5.
BCP56
BCP56-10
BCP56-16
BCX56
BCX56-10
BCX56-16
BC56PA
BC56-10PA
BC56-16PA
Marking codes
Marking code
BCP56
BCP56/10
BCP56/16
BH
BK
BL
AZ
BK
BL
Type number
BCP56_BCX56_BC56PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 25 October 2011
3 of 22
NXP Semiconductors
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
BCP56
single pulse;
t
p
1 ms
T
amb
25
C
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
single pulse;
t
p
1 ms
Min
-
-
-
-
-
-
-
Max
100
80
5
1
2
0.3
0.3
Unit
V
V
V
A
A
A
A
-
-
-
-
-
-
-
-
-
-
-
-
55
65
0.65
1.00
1.35
0.50
0.95
1.35
0.42
0.83
1.10
0.81
1.65
150
+150
+150
W
W
W
W
W
W
W
W
W
W
W
C
C
C
BCX56
[1]
[2]
[3]
BC56PA
[1]
[2]
[3]
[4]
[5]
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm
2
.
BCP56_BCX56_BC56PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 25 October 2011
4 of 22
NXP Semiconductors
BCP56; BCX56; BC56PA
80 V, 1 A NPN medium power transistors
1.5
(1)
006aac674
1.5
(1)
006aac675
P
tot
(W)
(2)
P
tot
(W)
1.0
(2)
1.0
(3)
(3)
0.5
0.5
0.0
–75
–25
25
75
125
175
T
amb
(°C)
0.0
–75
–25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves SOT223
2.0
P
tot
(W)
1.5
(1)
Fig 2.
Power derating curves SOT89
006aac676
(2)
1.0
(3)
(4)
0.5
(5)
0.0
–75
–25
25
75
125
175
T
amb
(°C)
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm
2
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm
2
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm
2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig 3.
Power derating curves SOT1061
BCP56_BCX56_BC56PA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 9 — 25 October 2011
5 of 22
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参数对比
与BCP56-16115相近的元器件有:BCX56-10115、BCX56-16147、BCP56-10115、BCX56-16115、BCP56TX。描述及对比如下:
型号 BCP56-16115 BCX56-10115 BCX56-16147 BCP56-10115 BCX56-16115 BCP56TX
描述 Diodes - General Purpose, Power, Switching SW DBL 75V 150MA HS Headers u0026 Wire Housings CLOSED W/O TABS 2P white tin 24 AWG RF Transceiver HIGH LINK BUDGET TRANSCEIVER Bipolar Transistors - BJT TRANS MED PWR TAPE-7 Voltage References 3.0V 50ppm/DegC 50uA SOT23-3 Series MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3
产品种类
Product Category
Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT Bipolar Transistors - BJT
制造商
Manufacturer
NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦) NXP(恩智浦)
RoHS Details Details Details Details Details Details
安装风格
Mounting Style
SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT -
封装 / 箱体
Package / Case
SOT-223-4 SOT-89-3 SOT-89-3 SOT-223-4 SOT-89-3 -
Transistor Polarity NPN NPN NPN NPN NPN -
Configuration Single Single Single Single Single -
Collector- Emitter Voltage VCEO Max 80 V 80 V 80 V 80 V 80 V -
Collector- Base Voltage VCBO 100 V 100 V 100 V 100 V 100 V -
Emitter- Base Voltage VEBO 5 V 5 V 5 V 5 V 5 V -
Maximum DC Collector Current 1 A 1 A 2 A 1 A 1 A -
Gain Bandwidth Product fT 180 MHz 180 MHz 180 MHz 180 MHz 180 MHz -
最大工作温度
Maximum Operating Temperature
+ 150 C + 150 C + 150 C + 150 C + 150 C -
高度
Height
1.7 mm 1.6 mm - 1.7 mm 1.6 mm -
长度
Length
6.7 mm 4.6 mm - 6.7 mm 4.6 mm -
最小工作温度
Minimum Operating Temperature
- 65 C - 65 C - 55 C - 65 C - 65 C -
系列
Packaging
Reel MouseReel Reel MouseReel MouseReel Reel
Pd-功率耗散
Pd - Power Dissipation
960 mW 1250 mW 1.35 W 960 mW 1250 mW -
工厂包装数量
Factory Pack Quantity
1000 1000 - - 1000 1000
宽度
Width
3.7 mm 2.6 mm - 3.7 mm 2.6 mm -
单位重量
Unit Weight
- 0.004603 oz 0.004603 oz 0.003951 oz 0.004603 oz -
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