JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
BCW61C
FEATURES
Low current
Low voltage
1. BASE
2. EMITTER
3. COLLECTOR
TRANSISTOR (PNP)
SOT-23
AXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
T
j
T
stg
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
Value
-32
-32
-5
-0.1
0.25
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE1
DC current gain
h
FE2
h
FE3
Collector-emitter saturation voltage
V
CE
(sat)
V
BE
(sat)
Test
conditions
MIN
-32
-32
-5
-0.02
-0.02
40
250
100
-0.06
-0.12
-0.6
-0.68
-0.55
-0.6
-0.72
100
4.5
11
-0.75
-0.25
-0.55
-0.85
-1.05
V
V
V
V
V
V
V
MHz
pF
pF
460
TYP
MAX
UNIT
V
V
V
I
C
= -10
μ
A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
=-10
μ
A, I
C
=0
V
CB
=-32V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-5V, I
C
= -10
μ
A
V
CE
=-5V, I
C
= -2mA
V
CE
=-1V, I
C
= -50mA
I
C
=-10 mA, I
B
=-0.25mA
I
C
=-50 mA, I
B
=-1.25mA
I
C
=-10 mA, I
B
=-0.25mA
I
C
=-50mA, I
B
=-1.25mA
V
CE
=-5V, I
C
= -10
μ
A
V
CE
=-5V, I
C
= -2mA
V
CE
=-1V, I
C
= -50mA
V
CE
= -5V,I
C
=-10mA,
f=
100MHz
V
CB
= -10V,I
E
=0,
f=
1MHz
V
EB
= -0.5V,I
C
=0,
f=
1MHz
μ
A
μ
A
Base-emitter saturation voltage
Base-emitter voltage
V
BE
Transition frequency
Collector capacitance
Emitter capacitance
f
T
C
C
C
e
BC
Marking
Typical Characteristics
BCW61C
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