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BCX70J,185

100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
100 mA, 45 V, NPN, 硅, 小信号晶体管, TO-236AB

器件类别：半导体    分立半导体   

厂商名称：NXP(恩智浦)

厂商官网：https://www.nxp.com

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参数 预览 参数对比
器件参数
参数名称
属性值
最大集电极电流
0.1000 A
最大集电极发射极电压
45 V
端子数量
3
最大关断时间
800 ns
最大导通时间
150 ns
加工封装描述
PLASTIC, SST3, SMD, 3 PIN
each_compli
Yes
欧盟RoHS规范
Yes
中国RoHS规范
Yes
状态
Active
结构
SINGLE
最小直流放大倍数
90
jedec_95_code
TO-236AB
jesd_30_code
R-PDSO-G3
jesd_609_code
e3
moisture_sensitivity_level
NOT APPLICABLE
元件数量
1
最大工作温度
150 Cel
包装材料
PLASTIC/EPOXY
包装形状
RECTANGULAR
包装尺寸
SMALL OUTLINE
eak_reflow_temperature__cel_
260
larity_channel_type
NPN
wer_dissipation_max__abs_
0.3000 W
qualification_status
COMMERCIAL
sub_category
Other Transistors
表面贴装
YES
端子涂层
TIN
端子形式
GULL WING
端子位置
DUAL
ime_peak_reflow_temperature_max__s_
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
额定交叉频率
250 MHz
vcesat_max
0.5500 V
dditional_feature
LOW NOISE
文档预览
DISCRETE SEMICONDUCTORS
DATA SHEET
BCX70 series
NPN general purpose transistors
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 16
NXP Semiconductors
Product data sheet
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BCX71 series.
MARKING
TYPE NUMBER
BCX70G
BCX70H
BCX70J
BCX70K
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BCX70G
BCX70H
BCX70J
BCX70K
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
AG*
AH*
AJ*
AK*
Top view
BCX70 series
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Jan 16
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
BCX70 series
MAX.
45
45
5
100
200
200
250
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
UNIT
K/W
2004 Jan 16
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BCX70G
BCX70H
BCX70J
BCX70K
DC current gain
BCX70G
BCX70H
BCX70J
BCX70K
DC current gain
BCX70G
BCX70H
BCX70J
BCX70K
V
CEsat
V
BEsat
V
BE
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
I
C
= 10 mA; I
B
= 0.25 mA
I
C
= 50 mA; I
B
= 1.25 mA
I
C
= 10 mA; I
B
= 0.25 mA
I
C
= 50 mA; I
B
= 1.25 mA
I
C
= 10
μA;
V
CE
= 5 V
I
C
= 2 mA; V
CE
= 5 V
I
C
= 50 mA; V
CE
= 1 V
C
c
C
e
f
T
F
Note
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
collector capacitance
emitter capacitance
transition frequency
noise figure
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 1 V
50
70
90
100
50
100
600
700
−
550
−
−
−
I
C
= 2 mA; V
CE
= 5 V
120
180
250
380
CONDITIONS
I
E
= 0; V
CB
= 45 V
I
E
= 0; V
CB
= 45 V; T
amb
= 150
°C
I
C
= 0; V
EB
= 4 V
I
C
= 10
μA;
V
CE
= 5 V
−
40
30
100
MIN.
−
−
−
BCX70 series
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
520
650
780
1.7
11
250
2
MAX.
20
20
20
−
−
−
−
220
310
460
630
−
−
−
−
350
550
850
1 050
−
750
−
−
−
−
6
UNIT
nA
μA
nA
mV
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz; 100
note 1
I
C
= 200
μA;
V
CE
= 5 V; R
S
= 2 kΩ;
f = 1 kHz; B = 200 Hz
−
2004 Jan 16
4
NXP Semiconductors
Product data sheet
NPN general purpose transistors
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BCX70 series
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 16
5
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参数对比
与BCX70J,185相近的元器件有：BCX70J,215、BCX70J,235、BCX70K,215、BCX70G,215、BCX70H,235。描述及对比如下：
型号 BCX70J,185 BCX70J,215 BCX70J,235 BCX70K,215 BCX70G,215 BCX70H,235
描述 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
端子数量 3 3 3 3 3 3
元件数量 1 1 1 1 1 1
表面贴装 YES YES YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
Brand Name - NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc NXP Semiconduc
是否Rohs认证 - 符合 符合 符合 符合 符合
零件包装代码 - TO-236 TO-236 TO-236 TO-236 TO-236
包装说明 - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 PLASTIC, SST3, SMD, 3 PIN SMALL OUTLINE, R-PDSO-G3
针数 - 3 3 3 3 3
制造商包装代码 - SOT23 SOT23 SOT23 SOT23 SOT23
Reach Compliance Code - compli compli compli compli compli
ECCN代码 - EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 - LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
最大集电极电流 (IC) - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
集电极-发射极最大电压 - 45 V 45 V 45 V 45 V 45 V
配置 - SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) - 90 90 100 50 70
JEDEC-95代码 - TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB
JESD-30 代码 - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609代码 - e3 e3 e3 e3 e3
湿度敏感等级 - 1 1 1 1 1
最高工作温度 - 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） - 260 260 260 260 260
极性/信道类型 - NPN NPN NPN NPN NPN
最大功率耗散 (Abs) - 0.3 W 0.25 W 0.3 W 0.3 W 0.25 W
认证状态 - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
端子面层 - Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
处于峰值回流温度下的最长时间 - 40 40 40 40 40
标称过渡频率 (fT) - 250 MHz 250 MHz 250 MHz 250 MHz 250 MHz
最大关闭时间（toff） - 800 ns 800 ns 800 ns 800 ns 800 ns
最大开启时间（吨） - 150 ns 150 ns 150 ns 150 ns 150 ns
VCEsat-Max - 0.55 V 0.55 V 0.55 V 0.55 V 0.55 V
Base Number Matches - 1 1 - 1 1
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器件捷径:
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