DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D186
BF199
NPN medium frequency transistor
Product data sheet
Supersedes data of 1997 Jul 07
2004 Nov 08
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
FEATURES
•
Low current (max. 25 mA)
•
Low voltage (max. 25 V).
APPLICATIONS
•
Output stage of a vision IF amplifier.
DESCRIPTION
NPN medium frequency transistor in a TO-92; SOT54
plastic package.
1
handbook, halfpage
BF199
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
2
3
3
1
2
MAM258
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
CM
P
tot
h
FE
f
T
PARAMETER
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
DC current gain
transition frequency
T
amb
≤
25
°C
V
CE
= 10 V; I
C
= 7 mA
V
CE
= 10 V; I
C
= 5 mA; f = 100 MHz
open base
CONDITIONS
open emitter
−
−
−
−
38
−
MIN.
−
−
−
−
−
550
TYP.
MAX.
40
25
25
500
−
−
MHz
UNIT
V
V
mA
mW
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BF199
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
2004 Nov 08
2
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
BE
C
re
f
T
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
base-emitter voltage
feedback capacitance
transition frequency
CONDITIONS
V
CB
= 40 V; I
E
= 0 A
V
EB
= 4 V; I
C
= 0 A
V
CE
= 10 V; I
C
= 7 mA
V
CE
= 10 V; I
C
= 7 mA
V
CB
= 10 V; I
C
= 0 A; f = 1 MHz
V
CE
= 10 V; I
C
= 5 mA; f = 100 MHz
MIN.
−
−
38
−
−
−
TYP.
−
−
−
775
−
550
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
250
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
40
25
4
25
25
500
+150
150
+150
BF199
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
UNIT
K/W
MAX.
100
100
−
925
0.5
−
UNIT
nA
nA
mV
pF
MHz
2004 Nov 08
3
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
BF199
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.55
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L
1(1)
max.
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
JEITA
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
2004 Nov 08
4
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
Objective data sheet
Preliminary data sheet
Product data sheet
Notes
1. Please consult the most recently issued document before initiating or completing a design.
PRODUCT
STATUS
(2)
Development
Qualification
Production
DEFINITION
BF199
This document contains data from the objective specification for product
development.
This document contains data from the preliminary specification.
This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
General
⎯
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes
⎯
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use
⎯
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications
⎯
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
⎯
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale
⎯
NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license
⎯
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control
⎯
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
⎯
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
2004 Nov 08
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