DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BFG21W
UHF power transistor
Product specification
Supersedes data of 1997 Nov 21
1998 Jul 06
NXP Semiconductors
Product specification
UHF power transistor
FEATURES
High power gain
High efficiency
1.9 GHz operating area
Linear and non-linear operation.
APPLICATIONS
Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc.
Driver for DCS1800, 1900.
DESCRIPTION
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
2
Top view
1
MSB842
BFG21W
PINNING
PIN
1, 3
2
4
base
collector
DESCRIPTION
emitter
handbook, halfpage
3
4
Marking code:
P1.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
RF performance at T
s
60
C
in a common emitter test circuit.
MODE OF OPERATION
Pulsed class-AB;
< 1 : 2; t
p
= 5 ms
f
(GHz)
1.9
V
CE
(V)
3.6
P
L
(dBm)
26
G
p
(dB)
10
C
(%)
typ.55
1998 Jul 06
2
NXP Semiconductors
Product specification
UHF power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the emitter pins.
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
T
s
60
C;
P
tot
= 600 mW; note 1
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
T
s
60
C;
note 1
CONDITIONS
open emitter
open base
open collector
65
MIN.
BFG21W
MAX.
15
4.5
1
500
600
+150
150
V
V
V
UNIT
mA
mW
C
C
VALUE
150
UNIT
K/W
10
3
handbook, full pagewidth
Rth
(K/W)
δ
=
1
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
0
tp
T
1
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
P
MGM219
10
2
δ
=
tp
T
tp (s)
1
At temperature stabilization solder point has been reached.
Fig.2 Transient thermal resistance as a function of pulse time; typical values.
1998 Jul 06
3
NXP Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)CER
V
(BR)EBO
I
CES
h
FE
C
c
C
re
f
T
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
transition frequency
CONDITIONS
open emitter; I
C
= 0.1 mA
open base; I
C
= 10 mA
R
BE
< 1 k, I
C
= 10 mA
open collector; I
E
= 0.1 mA
V
CE
= 5 V; V
BE
= 0
I
C
= 200 mA; V
CE
= 2 V
I
E
= i
e
= 0; V
CB
= 3 V; f = 1 MHz
I
C
= 0; V
CB
= 3.6 V; f = 1 MHz
I
C
= 200 mA; V
CE
= 3.6 V;
f = 700 MHz
MIN.
15
4.5
10
1
40
18
BFG21W
MAX.
10
100
3
1.5
UNIT
V
V
V
V
A
pF
pF
GHz
APPLICATION INFORMATION
RF performance at T
s
60
C
in a common emitter test circuit (see Figs 4 and 5).
MODE OF OPERATION
Pulsed; class-AB;
< 1 : 2; t
p
= 5 ms
f
(GHz)
1.9
V
CE
(V)
3.6
I
CQ
(mA)
1
P
L
(dBm)
26
G
p
(dB)
10
C
(%)
typ. 55
Ruggedness in class-AB operation
The transistor is capable of withstanding a load mismatch
corresponding to VSWR = 6 : 1 through all phases at
26 dBm output power under pulsed conditions:
= 1 : 2;
t
p
= 5 ms; f = 1.9 GHz at V
CE
= 4.5 V.
MGM220
handbook, halfpage
16
80
η
C
(%)
60
Gp
(dB)
12
Gp
8
η
C
40
4
20
0
5
10
15
20
0
25
30
PL (dBm)
Pulsed, class-AB operation;
< 1 : 2; t
p
= 5 ms.
f = 1.9 GHz; V
CE
= 3.6 V; I
CQ
= 1 mA; tuned at P
L
= 26 dBm.
Fig.3
Power gain and collector efficiency as a
function of the load power; typical values.
1998 Jul 06
4
NXP Semiconductors
Product specification
UHF power transistor
BFG21W
handbook, full pagewidth
VC
R1
R2
VS
L5
R3
C7
TR1
C3
C6
L4
L1
RF input
50
Ω
C1
C2
L2
DUT
C4
MGM221
L3
C5
RF output
50
Ω
Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz.
List of components used in test circuit (see Figs
4
and
5)
COMPONENT
C1, C5
C2
C3, C6
C4
C7
L1, L4
L2
L3
L5
R1
R2, R3
TR1
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (
r
= 6.15,
tan
= 0.0019); thickness 0.64 mm, copper cladding = 35
m.
DESCRIPTION
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor, note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
stripline; note 2
stripline; note 2
stripline; note 2
Grade 4S2 Ferroxcube chip bead
metal film resistor
metal film resistor
NPN transistor
220
;
0.4 W
10
;
0.4 W
BC817
9335 895 20215
VALUE
24 pF
3.3 pF
15 pF
2.4 pF
1 nF
100
50
50
18
0.2 mm
3.2
0.8 mm
4.6
0.8 mm
4330 030 36300
DIMENSIONS
CATALOGUE No.
1998 Jul 06
5
