BLF7G20LS-160P,112

RF mosfet 功率 single 65v 0.15ohms

厂商官网：https://www.nxp.com

器件标准： Rohs认证

参数对比

与BLF7G20LS-160P,112相近的元器件有：BLF7G20L-160P,118、BLF7G20LS-160P,118、BLF7G20L-160P118、BLF7G20LS-160P118、BLF7G20LS-160P112、BLF7G20L-160P,112。描述及对比如下：

型号	BLF7G20LS-160P,112	BLF7G20L-160P,118	BLF7G20LS-160P,118	BLF7G20L-160P118	BLF7G20LS-160P118	BLF7G20LS-160P112	BLF7G20L-160P,112
描述	RF mosfet 功率 single 65v 0.15ohms	RF mosfet 功率 single 65v 0.15ohms	RF mosfet 功率 single 65v 0.15ohms	RF MOSFET Transistors BLF7G20L-160P/ACC-4L/REEL13//	RF MOSFET Transistors BLF7G20LS-160P/ACC-4L/REEL13//	RF MOSFET Transistors BLF7G20LS-160P/ACC-4L/TUBE-BUL	RF MOSFET Transistors BLF7G20L-160P/ACC-4L/TUBE-BULK
产品种类 Product Category	-	-	-	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
制造商 Manufacturer	-	-	-	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)	NXP(恩智浦)
Transistor Polarity	-	-	-	N-Channel	N-Channel	N-Channel	N-Channel
Id - Continuous Drain Current	-	-	-	14 A	14 A	14 A	14 A
Vds - Drain-Source Breakdown Voltage	-	-	-	65 V	65 V	65 V	65 V
Rds On - Drain-Source Resistance	-	-	-	150 mOhms	150 mOhms	150 mOhms	150 mOhms
技术 Technology	-	-	-	Si	Si	Si	Si
Gain	-	-	-	17.5 dB	17.5 dB	17.5 dB	17.5 dB
Output Power	-	-	-	135 W	135 W	135 W	135 W
最大工作温度 Maximum Operating Temperature	-	-	-	+ 150 C	+ 150 C	+ 150 C	+ 150 C
安装风格 Mounting Style	-	-	-	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	-	-	-	SOT-1121A	SOT-1121B	SOT-1121B	SOT-1121A
Configuration	-	-	-	Dual	Dual	Dual	Dual
高度 Height	-	-	-	4.75 mm	4.75 mm	4.75 mm	4.75 mm
长度 Length	-	-	-	34.16 mm	20.7 mm	20.7 mm	34.16 mm
Operating Frequency	-	-	-	1.8 GHz to 2 GHz	1.8 GHz to 2 GHz	1.8 GHz to 2 GHz	1.8 GHz to 2 GHz
类型 Type	-	-	-	RF Power MOSFET	RF Power MOSFET	RF Power MOSFET	RF Power MOSFET
Vgs - Gate-Source Voltage	-	-	-	13 V	13 V	13 V	13 V
Vgs th - Gate-Source Threshold Voltage	-	-	-	1.9 V	1.9 V	1.9 V	1.9 V
宽度 Width	-	-	-	19.94 mm	19.94 mm	19.94 mm	19.94 mm