型号
- 型号
- 关键词
| 型号 | BLF884P112 | BLF884PS112 |
|---|---|---|
| 描述 | RF MOSFET Transistors 50V 240mOhms | RF MOSFET Transistors UHF PWR LDMOS TRNSTR |
| 产品种类 Product Category |
RF MOSFET Transistors | RF MOSFET Transistors |
| 制造商 Manufacturer |
NXP(恩智浦) | NXP(恩智浦) |
| RoHS | Details | Details |
| Transistor Polarity | N-Channel | N-Channel |
| Id - Continuous Drain Current | 650 mA | 650 mA |
| Vds - Drain-Source Breakdown Voltage | 104 V | 104 V |
| Rds On - Drain-Source Resistance | 240 mOhms | 240 mOhms |
| 技术 Technology |
Si | Si |
| Gain | 21 dB at 860 MHz | 21 dB at 860 MHz |
| Output Power | 150 W | 150 W |
| 最大工作温度 Maximum Operating Temperature |
+ 150 C | + 150 C |
| 安装风格 Mounting Style |
SMD/SMT | SMD/SMT |
| 封装 / 箱体 Package / Case |
SOT-1121A-5 | SOT-1121B-5 |
| 系列 Packaging |
Tube | Tube |
| Configuration | Dual | Dual |
| Operating Frequency | 470 MHz to 860 MHz | 470 MHz to 860 MHz |
| 工厂包装数量 Factory Pack Quantity |
60 | 60 |
| 类型 Type |
RF Power MOSFET | RF Power MOSFET |
| Vgs - Gate-Source Voltage | 11 V | 11 V |
| Vgs th - Gate-Source Threshold Voltage | 1.9 V | 1.9 V |
