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BR3508

SILICON BRIDGE RECTIFIERS

器件类别：分立半导体    二极管   

厂商名称：EIC [EIC discrete Semiconductors]

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
EIC [EIC discrete Semiconductors]
包装说明
S-PUFM-D4
Reach Compliance Code
compli
其他特性
HIGH RELIABILITY
最小击穿电压
800 V
外壳连接
ISOLATED
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
JESD-30 代码
S-PUFM-D4
最大非重复峰值正向电流
400 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-40 °C
最大输出电流
35 A
封装主体材料
PLASTIC/EPOXY
封装形状
SQUARE
封装形式
FLANGE MOUNT
峰值回流温度（摄氏度）
NOT SPECIFIED
参考标准
TS 16949
最大重复峰值反向电压
800 V
表面贴装
NO
端子形式
SOLDER LUG
端子位置
UPPER
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
BR3500 - BR3512
PRV : 50 - 1200 Volts
Io : 35 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
SILICON BRIDGE RECTIFIERS
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ
0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55
°
C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at I
F
= 17.5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Typical Thermal Resistance at Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Notes :
Ta = 25
°
C
Ta = 100
°
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
R
θ
JC
R
θ
JA
T
J
T
STG
BR
3500
50
35
50
BR
3501
100
70
100
BR
3502
200
140
200
BR
3504
400
280
400
35
BR
3506
600
420
600
BR
3508
800
560
800
BR
3510
1000
700
1000
BR
3512
1200
840
1200
UNIT
V
V
V
A
A
A
2
S
V
µA
µA
°C/W
°C
°C
°C
400
660
1.1
10
200
1.5
10
- 40 to + 150
- 40 to + 150
1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( BR3500 - BR3512 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
42
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
600
35
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
500
28
400
T
J
= 50
°C
21
300
14
HEAT-SINK MOUNTING, Tc
7.5" x 3.5" x 4.6" THK.
(19cm x 9cm x 11.8cm)
Al.-Finned plate
200
7
100
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
0
25
50
75
100
125
150
175
0
1
2
4
6
10
20
40
60 100
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
FORWARD CURRENT, AMPERES
T
J
= 100
°C
REVERSE CURRENT,
MICROAMPERES
10
1.0
1.0
Pulse Width = 300
µs
1 % Duty Cycle
0.1
T
J
= 25
°C
T
J
= 25
°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
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参数对比
与BR3508相近的元器件有：BR3501、BR3500、BR3502、BR3504、BR3510、BR3506、BR3512、BR3500_05。描述及对比如下：
型号 BR3508 BR3501 BR3500 BR3502 BR3504 BR3510 BR3506 BR3512 BR3500_05
描述 SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 - -
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 -
厂商名称 EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] -
包装说明 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 - -
Reach Compliance Code compli compli compli compli compli compli compli compli -
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY -
最小击穿电压 800 V 100 V 50 V 200 V 400 V 1000 V 600 V 1200 V -
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED -
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS -
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON -
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE -
最大正向电压 (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1 V 1.1 V - -
JESD-30 代码 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 S-PUFM-D4 -
最大非重复峰值正向电流 400 A 400 A 400 A 400 A 400 A 400 A 400 A 400 A -
元件数量 4 4 4 4 4 4 4 4 -
相数 1 1 1 1 1 1 1 1 -
端子数量 4 4 4 4 4 4 4 4 -
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -
最大输出电流 35 A 35 A 35 A 35 A 35 A 35 A 35 A 35 A -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE -
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
参考标准 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 -
最大重复峰值反向电压 800 V 100 V 50 V 200 V 400 V 1000 V 600 V 1200 V -
表面贴装 NO NO NO NO NO NO NO NO -
端子形式 SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG SOLDER LUG -
端子位置 UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER -
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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器件捷径:
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