BSC13DN30NSFD
MOSFET
OptiMOS
TM
3Power-Transistor,300V
Features
•N-channel,normallevel
•175°Crated
•ExcellentgatechargexR
DS(on)
product(FOM)
•Verylowon-resistanceR
DS(on)
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC
1)
fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21
•Idealforhigh-frequencyswitchingandsynchronousrectification
8
7
SuperSO8
5
6
5
6
7
8
1
2
3
4
4
3
2
1
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Value
300
130
16
Unit
V
mΩ
A
S1
S2
S3
G4
8D
7D
6D
5D
Type/OrderingCode
BSC13DN30NSFD
Package
PG-TDSON-8
Marking
13DN30NF
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2016-12-05
OptiMOS
TM
3Power-Transistor,300V
BSC13DN30NSFD
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.1,2016-12-05
OptiMOS
TM
3Power-Transistor,300V
BSC13DN30NSFD
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Continuous drain current
Pulsed drain current
1)
Avalanche energy, single pulse
Reversediodepeakdv/dt
Gate source voltage
Power dissipation
Operating and storage temperature
Symbol
I
D
I
D,pulse
E
AS
dv/dt
V
GS
P
tot
T
j
,T
stg
Values
Min.
-
-
-
-
-
-20
-
-55
Typ.
-
-
-
-
-
-
-
-
Max.
16
14
64
56
60
20
150
175
Unit
A
A
mJ
kV/µs
V
W
°C
Note/TestCondition
T
C
=25°C
T
C
=100°C
T
C
=25°C
I
D
=14.4A,R
GS
=25Ω
I
D
=36A,V
DS
=150V,
di/dt=1000A/µs,T
j,max
=175°C
-
T
C
=25°C
-
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Symbol
R
thJC
Values
Min.
-
-
-
Typ.
0.6
-
-
Max.
1
75
50
Unit
K/W
K/W
K/W
Note/TestCondition
-
-
-
Thermal resistance, junction - ambient,
R
thJA
minimal footprint
Thermal resistance, junction - ambient,
R
thJA
6 cm
2
cooling area
2)
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
1)
2)
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
300
2
-
-
-
-
-
19
Typ.
-
3
0.1
10
1
114
3.3
38
Max.
-
4
1
100
100
130
5
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=90µA
V
DS
=240V,V
GS
=0V,T
j
=25°C
V
DS
=240V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=16A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=16A
See Diagram 3
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.2.1,2016-12-05
OptiMOS
TM
3Power-Transistor,300V
BSC13DN30NSFD
Table5Dynamiccharacteristics
Parameter
Input capacitance
Output capacitance
1)
Reverse transfer capacitance
1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
1840
76
5.4
8.0
4.0
19
4.0
Max.
2450
102
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=150V,f=1MHz
V
GS
=0V,V
DS
=150V,f=1MHz
V
GS
=0V,V
DS
=150V,f=1MHz
V
DD
=150V,V
GS
=10V,I
D
=8A,
R
G,ext
=1.6Ω
V
DD
=150V,V
GS
=10V,I
D
=8A,
R
G,ext
=1.6Ω
V
DD
=150V,V
GS
=10V,I
D
=8A,
R
G,ext
=1.6Ω
V
DD
=150V,V
GS
=10V,I
D
=8A,
R
G,ext
=1.6Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
1)
Gate plateau voltage
Output charge
Symbol
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
Values
Min.
-
-
-
-
-
-
Typ.
8.0
2.9
5.4
23
4.4
48
Max.
-
-
-
30
-
-
Unit
nC
nC
nC
nC
V
nC
Note/TestCondition
V
DD
=150V,I
D
=16A,V
GS
=0to10V
V
DD
=150V,I
D
=16A,V
GS
=0to10V
V
DD
=150V,I
D
=16A,V
GS
=0to10V
V
DD
=150V,I
D
=16A,V
GS
=0to10V
V
DD
=150V,I
D
=16A,V
GS
=0to10V
V
DD
=150V,V
GS
=0V
Table7Reversediode
Parameter
Diode continous forward current
Diode pulse current
3)
Diode hard commutation current
4)
Diode forward voltage
Reverse recovery time
1)
Reverse recovery charge
1)
Symbol
I
S
I
S,pulse
I
S,hard
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
-
Typ.
-
-
-
0.9
111
249
Max.
16
64
16
1.2
222
498
Unit
A
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
T
C
=25°C,di
F
/dt=1000A/µs
V
GS
=0V,I
F
=16A,T
j
=25°C
V
R
=150V,I
F
=12.6A,di
F
/dt=100A/µs
V
R
=150V,I
F
=12.6A,di
F
/dt=100A/µs
1)
2)
Defined by design. Not subject to production test
See
″Gate
charge waveforms″ for parameter definition
3)
Diode pulse current is defined by thermal and/or package limits
4)
Maximum allowed hard-commutated current through diode at di/dt=1000 A/µs
Final Data Sheet
4
Rev.2.1,2016-12-05
OptiMOS
TM
3Power-Transistor,300V
BSC13DN30NSFD
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
200
Diagram2:Draincurrent
20
16
150
12
P
tot
[W]
100
I
D
[A]
8
4
0
50
100
150
200
0
50
0
0
50
100
150
200
T
C
[°C]
P
tot
=f(T
C
)
I
D
=f(T
C
);V
GS
≥10V
T
C
[°C]
Diagram3:Safeoperatingarea
10
2
1 µs
10 µs
Diagram4:Max.transientthermalimpedance
10
1
100 µs
10
1
10
0
I
D
[A]
10 ms
DC
10
0
Z
thJC
[K/W]
1 ms
0.5
0.2
0.1
10
-1
0.05
0.02
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
3
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
I
D
=f(V
DS
);T
C
=25°C;D=0;parameter:t
p
Z
thJC
=f(t
p
);parameter:D=t
p
/T
t
p
[s]
Final Data Sheet
5
Rev.2.1,2016-12-05
工控电子
