BSS138W
50V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3Ω
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4Ω
• R
DS(ON)
, V
GS
@2.5V,I
DS
@100mA=6Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-323 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 38W
• Apporx. Weight: 0.0002 ounce, 0.005 gram
Maximum Ratings and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo lta g e
Ga te - S o ur c e Vo lta g e
C o nti nuo us D r a i n C ur r e nt
P uls e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
P
D
T
J
,T
S TG
R
θJ
A
L i mi t
50
+20
300
2000
350
210
- 5 5 to + 1 5 0
357
Uni ts
V
V
mA
mA
mW
O
T
A
= 2 5
O
C
T
A
= 7 5
O
C
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e
Ra ng e
M a xi m um P o we r D i s s i p a ti o n
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
July 14,2015-REV.02
PAGE . 1
BSS138W
ELECTRICALCHARACTERISTICS
P a r a m e te r
S ta ti c
D ra i n-S o urc e B re a k d o wn
Vo lta g e
G a te Thr e s ho ld Vo lta g e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze r o Ga te Vo lta g e D ra i n
C ur re nt
Gate Body Leakage
Forward Transconductance
Dynamic
To ta l Ga te C ha r g e
Tur n- On Ti m e
Tur n- Off Ti m e
Inp ut C a p a c i ta nc e
O utp ut C a p a c i ta nc e
Re ve r s e Tra ns fe r
C a p a c i ta nc e
S o urc e - D r a i n D i o d e
D i o d e F o rwa r d Vo lta g e
C o nti nuo us D i o d e F o r wa r d
C ur re nt
P uls e D i o d e F o rwa r d
C ur re nt
V
SD
I
S
I
S M
I
S
=250mA , V
GS
=0V
-
-
-
-
-
0.82
-
-
1.2
300
2000
V
mA
mA
Q
g
t
on
t
o ff
C
i ss
C
oss
C
rss
V
D S
=2 5 V , V
GS
=0 V
f=1 .0 M H
Z
V
D S
=2 5 V, I
D
=2 5 0 m A
V
GS
=4.5V
V
DD
=30V , R
L
=100Ω
I
D
=300mA , V
GEN
=10V
R
G
=6Ω
-
-
-
-
-
-
-
-
-
-
-
-
1 .0
40
ns
150
50
10
5
pF
nC
B V
DSS
V
GS ( th)
R
D S ( o n)
R
D S ( o n)
R
D S ( o n)
I
D S S
I
GS S
g
fS
V
GS
=0 V , I
D
=1 0 uA
V
D S
=V
GS
, I
D
=2 5 0 uA
V
GS
=2.5V , I
D
=100mA
V
GS
=4.5V , I
D
=200mA
V
GS
=10V , I
D
=500mA
V
DS
=50V , V
GS
=0V
V
GS
=+ 2 0 V , V
D S
=0 V
V
D S
=1 0 V , I
D
=2 5 0 m A
50
0 .8
-
-
-
-
-
100
-
-
2 .8
1 .8
1.6
-
-
-
-
1 .5
6 .0
4 .0
3.0
1
+1 0
-
μ
A
μ
A
mS
Ω
V
V
S ym b o l
Te s t C o nd i ti o n
M i n.
Typ .
M a x.
Uni ts
Switching
Test Circuit
V
IN
V
DD
R
L
V
OUT
Gate Charge
Test Circuit
V
GS
V
DD
R
L
R
G
1mA
R
G
July 14,2015-REV.02
PAGE . 2
BSS138W
Typical Characteristics Curves (T
A
=25 C,unless otherwise noted)
O
I
D
-Drain-to-Source Current (A)
1.2
1.0
0.8
1
I
D
-Drain-to-Source Current (A)
V
GS
=10V~4.0V
V
DS
=10V
0.8
0.6
0.4
3.0V
0.6
0.4
0.2
0
T
J
= 25 C
0.2
0
o
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
FIG.2- Transfer Characteristic
5
5
R
DS(ON)
- On Resistance (
W
)
R
DS(ON)
- On Resistance (
W
)
4
3
V
GS
=4.5V
4
3
I
D
=200mA
2
V
GS
=10V
2
I
D
=500mA
1
0
0
0.2
0.4
0.6
0.8
1
1.2
1
0
0
2
4
6
8
10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
FIG.3- On Resistance vs Drain Current
1.8
V
GS
=10 V
1.6
1.4
1.2
1
0.8
0.6
-50
I
D
=500mA
FIG.4- On Resistance vs Gate to Source Voltage
R
DS(ON)
-On-Resistance(Normalized)
-25
0
25
50
75
100 125 150
O
T
J
- Junction Temperature ( C)
FIG.5- On Resistance vs Junction Temperature
July 14,2015-REV.02
PAGE . 3
BSS138W
10
8
6
4
2
0
1
I
D
=250m
A
V
GS
- Gate-to-Source Voltage(V)
V
GS
= 0V
I
S
- Source Current (A)
T
J
= 125 C
O
T
J
=25
O
C
0.1
T
J
=-55 C
O
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0.2
0.4
0.6
0.8
1
1.2
1.4
Q
g
- Gate Charge (nC)
V
SD
- Source-to-Drain Voltage (V)
Fig.6 - Gate Charge Waveform
V
th
- G-S Threshold Voltage(Normalized)
BV
DSS
- Breakdown Voltage(Normlized)
1.2
I
D
= 250
m
A
1.1
1.0
0.9
0.8
0.7
-50
Fig.7 Source-Drain Diode Forward Voltage
1.2
I
D
= 250
m
A
1.15
1.1
1.05
1
0.95
0.9
-25
0
25
50
75
100 125 150
O
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature ( C)
T
J
- Junction Temperature (
O
C)
Fig.8 - Threshold Voltage vs Temperature
50
f = 1MHz
V
GS
= 0V
Fig.9 - Breakdown Voltage vs Junction Temperature
40
C - Capacitance (pF)
Ciss
30
20
Coss
10
Crss
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
Fig.10 - Capacitance vs Drain to Source Voltage
July 14,2015-REV.02
PAGE . 4
BSS138W
MOUNTING PAD LAYOUT
0.026
(0.66)
0.034
(0.86)
0.026
(0.65)
0.026
(0.65)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7" plastic Reel
July 14,2015-REV.02
0.073
(1.85)
PAGE . 5
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