BSS84W
P-CHANNEL ENHANCEMENT MODE MOSFET
This is a P-channel, enhancement-mode MOSFET, housed in the industry-
standard, SOT-323 (SC-70) package. This device is ideal for portable
applications where board space is at a premium.
3
SOT- 323
FEATURES
Low On-Resistance
Low Gate Threshold Voltage
Fast Switching
Available in lead-free plating (100% matte tin finish)
Drain
3
1
2
APPLICATIONS
Switching Power Supplies
Hand-Held Computers, PDAs
1
Gate
2
Source
MARKING CODE: 84W
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current
Total Power Dissipation (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Note 1. R
GS
< 20K ohms
T
J
= 25°C Unless otherwise noted
Symbol
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
T
stg
Value
- 50
- 50
± 20
130
200
-55 to +150
-55 to +150
Units
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient (Note 2)
Symbol
R
thja
Value
625
Units
°C/W
Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
8/12/2005
Page 1
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BSS84W
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (Note 3)
Parameter
Symbol
Conditions
Min
-50
-
-
-
-
Typ
-
-
-
-
-
Max
-
-15
-60
-0.1
±10
nA
µA
Units
V
Drain-Source Breakdown Voltage BV
DSS
I
D
= -250µA, V
GS
= 0V
V
DS
= -50V, V
GS
= 0V, T
J
=25°C
Zero Gate Voltage Drain Current
Gate-Body Leakage
I
DSS
I
GSS
V
DS
= -50V, V
GS
= 0V, T
J
=125°C
V
DS
= -25V, V
GS
= 0V, T
J
=25°C
V
GS
= ±20V, V
DS
= 0V
T
J
= 25°C Unless otherwise noted
ON CHARACTERISTICS (Note 3)
Parameter
Gate Threshold Voltage
Symbol
Conditions
Min
-0.8
-
0.05
Typ
-1.44
3.8
-
Max
-2.0
10
-
Units
V
Ohms
S
V
GS(th)
V
DS
= V
GS
I
D
= -1mA
,
Static Drain-Source On-ResistanceR
DS(ON)
V
GS
= -5V, I
D
= -0.1A
g
FS
V
DS
= -25V, I
D
= -0.1A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
C
iss
C
oss
C
rss
Conditions
V
DS
= -25V,
V
GS
= 0V,
f = 1.0MHz
Min
-
-
-
Typ
-
-
-
Max
45
25
12
Units
pF
pF
pF
SWITCHING CHARACTERISTICS
Parameter
Turn-On Delay Time
Turn-Off Delay Time
Symbol
t
D(ON)
t
D(OFF)
Conditions
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50ohm, V
GS
= -10V
Min
-
-
Typ
7.5
25
Max
-
-
Units
ns
ns
Note 3. Short duration test pulse used to minimize self-heating
8/12/2005
Page 2
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BSS84W
ELECTRICAL CHARACTERISTIC CURVES
1
-I
D
- Drain-to-Source Current (A)
T
J
= 25°C Unless otherwise noted
1
-I
D
- Drain Source Current (A)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
V
GS
= 6V, 7V, 8V, 9V, 10V
V
DS
=10V
0.8
0.6
0.4
25
o
C
0.2
0
5.0V
4.0V
3.0V
1
2
3
4
5
0
1
2
3
4
5
6
7
-V
DS
- Drain-to-Source Voltage (V)
-V
GS
- Gate-to-Source Voltage (V)
Fig. 1. Output Characteristics
10
Fig. 2. Transfer Characteristics
10
R
DS(ON)
- On-Resistance (Ohms)
R
DS(ON)
- On-Resistance (Ohms)
8
V
GS
= 4.5V
8
6
Ids=-500mA
4
2
Ids=-50mA
0
6
4
V
GS
=10.0V
2
0
0
0.2
0.4
0.6
0.8
1
2
4
6
8
10
-I
D
- Drain Curre nt (A)
-V
GS
- Gate-to-Source Voltage (V)
Fig. 3. On-Resistance vs. Drain Current
V
GS
Threshold Voltage (NORMALIZED
Fig. 4. On-Resistance vs. G-S Voltage
10
-I
S
- Source Current (A)
1.2
I
D
=250
µ
A
1.1
V
GS
= 0V
1
1
25
o
C
0.1
0.9
0.8
-50
-25
0
25
50
75
100
125
150
0.01
0.4
0.6
0.8
1
1.2
1.4
T
J
- Junction Temperature (
o
C)
-V
SD
- Source-to-Drain Voltage (V)
Fig. 5. Threshold Voltage vs. Temperature
8/12/2005
Page 3
Fig. 6. Sourse-Drain Diode Forward Voltage
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BSS84W
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS
ORDERING INFORMATION
BSS84W T/R7 - 7 inch reel, 3K units per reel
BSS84W T/R13 - 13 inch reel, 10K units per reel
Copyright PanJit International, Inc 2005
The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation
herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
system s. Pan Jit does not convey any license under its patent rights or rights of others.
8/12/2005
Page 4
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