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BTA216X-800E

INTERNAL SCSI-3 FEMALE TO IDC50 FEMALE ADAPTER

器件类别:半导体    分立半导体   

厂商名称:Philips Semiconductors (NXP Semiconductors N.V.)

厂商官网:https://www.nxp.com/

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Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation
triacs in a full pack, plastic envelope
intended for use in motor control circuits
or with other highly inductive loads.
These
devices
balance
the
requirements
of
commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
BTA216X series D, E and F
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA216X-
BTA216X-
BTA216X-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600D
600E
600F
600
16
140
MAX.
-
800E
800F
800
16
140
UNIT
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2
gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
hs
38 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-600
600
1
16
MAX.
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
140
150
98
100
2
5
5
0.5
150
125
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1999
1
Rev 1.000
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
BTA216X series D, E and F
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
f = 50-60 Hz; sinusoidal
waveform;
R.H.
65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.0
5.5
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
2
CONDITIONS
BTA216X-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 20 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 ˚C
V
D
= V
DRM(max)
;
T
j
= 125 ˚C
-
-
-
-
-
-
-
-
-
0.25
-
-
-
-
-
-
-
-
1.2
0.7
0.4
0.1
MIN.
TYP.
...D
5
5
5
15
25
25
15
MAX.
...E
10
10
10
20
30
30
25
1.5
1.5
-
0.5
...F
25
25
25
25
40
40
30
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
UNIT
I
L
Latching current
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
2
Device does not trigger in the T2-, G+ quadrant.
October 1999
2
Rev 1.000
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
CONDITIONS
BTA216X-
V
DM
= 67% V
DRM(max)
;
T
j
= 110 ˚C; exponential
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 110 ˚C;
I
T(RMS)
= 16 A;
dV
com
/dt = 20v/µs; gate
open circuit
V
DM
= 400 V; T
j
= 110 ˚C;
I
T(RMS)
= 16 A;
dV
com
/dt = 0.1v/µs; gate
open circuit
I
TM
= 20 A; V
D
= V
DRM(max)
;
I
G
= 0.1 A; dI
G
/dt = 5 A/µs
...D
30
BTA216X series D, E and F
MIN.
...E
60
...F
70
TYP.
-
MAX.
-
UNIT
V/µs
dI
com
/dt
1.8
3.5
4.5
-
-
A/ms
dI
com
/dt
Critical rate of change of
commutating current
4.3
5.3
6.3
-
-
A/ms
t
gt
Gate controlled turn-on
time
-
-
-
2
-
µs
October 1999
3
Rev 1.000
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
BTA216X series D, E and F
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
3
1.0 (2x)
0.6
2.54
0.5
2.5
1.3
0.9
0.7
5.08
Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1999
4
Rev 1.000
Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
BTA216X series D, E and F
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1999
5
Rev 1.000
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参数对比
与BTA216X-800E相近的元器件有:BTA216X-800F。描述及对比如下:
型号 BTA216X-800E BTA216X-800F
描述 INTERNAL SCSI-3 FEMALE TO IDC50 FEMALE ADAPTER CAT5E PATCH CORD 1 FOOT BLUE
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