SILICON CONTROLLED RECTIFIER,800V V(DRM),50A I(T),TO-208AA
厂商名称:ST(意法半导体)
厂商官网:http://www.st.com/
下载文档型号 | BTW48-800M | BTW48-400M | BTW48-200M | BTW48-600M | BTW48-1200M |
---|---|---|---|---|---|
描述 | SILICON CONTROLLED RECTIFIER,800V V(DRM),50A I(T),TO-208AA | SILICON CONTROLLED RECTIFIER,400V V(DRM),50A I(T),TO-208AA | SILICON CONTROLLED RECTIFIER,200V V(DRM),50A I(T),TO-208AA | SILICON CONTROLLED RECTIFIER,600V V(DRM),50A I(T),TO-208AA | SILICON CONTROLLED RECTIFIER,1.2KV V(DRM),50A I(T),TO-208AA |
厂商名称 | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) | ST(意法半导体) |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大直流栅极触发电流 | 60 mA | 60 mA | 60 mA | 60 mA | 60 mA |
最大直流栅极触发电压 | 3 V | 3 V | 3 V | 3 V | 3 V |
最大维持电流 | 30 mA | 30 mA | 30 mA | 30 mA | 30 mA |
最大漏电流 | 5 mA | 5 mA | 5 mA | 5 mA | 5 mA |
通态非重复峰值电流 | 500 A | 500 A | 500 A | 500 A | 500 A |
最大通态电流 | 50000 A | 50000 A | 50000 A | 50000 A | 50000 A |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
断态重复峰值电压 | 800 V | 400 V | 200 V | 600 V | 1200 V |
表面贴装 | NO | NO | NO | NO | NO |
触发设备类型 | SCR | SCR | SCR | SCR | SCR |
标称电路换相断开时间 | 50 µs | 50 µs | - | 50 µs | 50 µs |