BU2006-M3, BU2008-M3, BU2010-M3
www.vishay.com
Vishay General Semiconductor
Enhanced isoCink+
TM
Bridge Rectifiers
isoCink+™
FEATURES
• UL recognition file number E309391 (QQQX2)
UL 1557 (see *)
• Thin single in-line package
• Available for BU-5S lead forming option
(part number with “5S” suffix, e.g. BU20065S)
• Superior thermal conductivity
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
+
~
~
-
-
~
~
+
Case Style BU
TYPICAL APPLICATIONS
+
~
~
-
* Tested to UL standard for safety electrically isolated
semiconductor devices. UL 1557 4th edition.
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94 V-0 flammability rating.
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
MECHANICAL DATA
Case:
BU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
per
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 10 A
T
J
max.
Diode variations
BU
20 A
600 V, 800 V, 1000 V
240 A
5 μA
0.85 V
150 °C
In-Line
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Average rectified forward current (Fig. 1, 2)
Non-repetitive peak forward surge current
8.3 ms single sine-wave, T
J
= 25 °C
Rating for fusing (t < 8.3 ms) T
J
= 25 °C
Operating junction and storage temperature range
Notes
(1)
With heatsink
(2)
Without heatsink, free air
T
C
= 61 °C
(1)
T
A
= 25 °C
(2)
SYMBOL
V
RRM
I
O
I
FSM
I
2
t
T
J
, T
STG
BU2006
600
BU2008
800
20
3.5
240
239
- 55 to + 150
BU2010
1000
UNIT
V
A
A
A
2
s
°C
Revision: 26-Jun-13
Document Number: 89298
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BU2006-M3, BU2008-M3, BU2010-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage per diode
(1)
Maximum reverse current per diode
Typical junction capacitance per diode
TEST CONDITIONS
I
F
= 10 A
rated V
R
4.0 V, 1 MHz
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F
I
R
C
J
TYP.
0.95
0.85
-
110
95
MAX.
1.05
0.95
5.0
350
-
UNIT
V
μA
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
Notes
With 60 W air cooled heatsink
(2)
Without heatsink, free air
(1)
SYMBOL
R
JC
(1)
R
JA
(2)
BU2006
BU2008
2.4
20
BU2010
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
BU2006-M3/45
BU2006-M3/51
BU20065S-M3/45
UNIT WEIGHT (g)
4.76
4.76
4.76
PREFERRED PACKAGE CODE
45
51
45
BASE QUANTITY
20
250
20
DELIVERY MODE
Tube
Paper tray
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
24
5
20
Average Forward Rectified Current (A)
Average Forward Output Current (A)
4
16
12
With Heatsink
Sine-Wave, R-Load
T
C
Measured at Device Bottom
T
C
T
C
3
2
Without Heatsink
Sine-Wave, R-Load
Free Air, T
A
8
4
1
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
Case Temperature (°C)
Ambient Temperature (°C)
Fig. 1 -
Derating Curve Output Rectified Current
Fig. 2 -
Forward Current Derating Curve
Revision: 26-Jun-13
Document Number: 89298
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BU2006-M3, BU2008-M3, BU2010-M3
www.vishay.com
Vishay General Semiconductor
1000
50
Instantaneous Reverse Current (µA)
Forward Power Dissipation (W)
T
J
= 150 °C
100
T
J
= 125 °C
10
40
30
20
1
T
J
= 25 °C
10
0
0
4
8
12
16
20
24
0.1
10
20
30
40
50
60
70
80
90
100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 -
Forward Power Dissipation
Fig. 5 -
Typical Reverse Characteristics Per Diode
100
1000
T
J
= 150 °C
Instantaneous Forward Current (A)
10
T
J
= 125 °C
1
Junction Capacitance (pF)
1.0
1.1
100
0.1
T
J
= 25 °C
0.01
0.3
10
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 4 -
Typical Forward Characteristics Per Diode
Fig. 6 -
Typical Junction Capacitance Per Diode
Revision: 26-Jun-13
Document Number: 89298
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BU2006-M3, BU2008-M3, BU2010-M3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Type BU
0.880 (22.3)
0.860 (21.8)
0.020R (TYP.)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.085 (2.16)
0.065 (1.65)
5°
TYP.
0.048 (1.23)
0.039 (1.00)
0.710 (18.0)
0.690 (17.5)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
9°
TYP.
0.161 (4.10)
0.142 (3.60)
View A
Vishay General Semiconductor
0.080 (2.03)
0.060 (1.52)
0.075
(1.9) R
+
~
~
-
0.190 (4.83)
0.210 (5.33)
0.080 (2.03)
0.065 (1.65)
0.028 (0.72)
0.020 (0.52)
Polarity shown on front side of case, positive lead beveled corner
0.055 (1.385) REF.
0.094 (2.39) x 45° REF.
R 0.11
(2.78) REF.
0.64 (16.28) REF.
0.62 (15.78) REF.
R 0.10
(2.60) REF.
0.055 (1.385) REF.
Revision: 26-Jun-13
Document Number: 89298
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BU2006-M3, BU2008-M3, BU2010-M3
www.vishay.com
FORMING SPECIFICATION: BU-5S
in inches (millimeters)
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.020R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
9°
TYP.
Vishay General Semiconductor
0.160 (4.1)
0.140 (3.5)
0.075
(1.9) R
0.080 (2.03)
0.060 (1.52)
+
~ ~
-
0.085 (2.16)
0.065 (1.65)
0.100 (2.54)
0.085 (2.16)
0.219 (5.55)
MAX.
5°
TYP.
0.050 (1.27)
0.040 (1.02)
0.213 (5.40)
0.173 (4.40)
0.417 (10.60)
0.370 (9.40)
0.134 (3.40)
0.087 (2.20)
0.319 (8.10)
0.272 (6.90)
0.319 (8.10)
0.272 (6.90)
0.315 (8.0)
0.276 (7.0)
0.028 (0.72)
0.020 (0.52)
0.080 (2.03)
0.065 (1.65)
APPLICATION NOTE
(1)
(2)
(3)
Device UL approved for safety use dielectric strength of 1500 V.
If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
Heat sink shape recommendation:
(3)
Heatsink
2.5 mm MIN.
2.5 mm MIN.
By Safety Requirements
Revision: 26-Jun-13
Document Number: 89298
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
