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BY297

2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
Reach Compliance Code
unknow
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
湿度敏感等级
1
最大非重复峰值正向电流
70 A
元件数量
1
最高工作温度
150 °C
最大输出电流
2 A
最大重复峰值反向电压
200 V
最大反向恢复时间
0.5 µs
表面贴装
NO
文档预览
BY296
THRU
BY299
2.0 AMPS. Fast Recovery Rectifiers
Voltage Range
100 to 800 Volts
Current
2.0 Amperes
Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
DO-201AD
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Axial leads, solderable per MIL-
STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260℃/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs.,(2.3kg) tension
Weight: 1.2 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
BY296
Type Number
Maximum Recurrent Peak Reverse Voltage
V
RRM
100
Maximum RMS Voltage
V
RMS
70
Maximum DC Blocking Voltage
V
DC
100
Maximum Average Forward Rectified Current
.375”(9.5mm) Lead Length @T
A
= 55℃
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 2.0A
Maximum DC Reverse Current @ T
A
=25℃
at Rated DC Blocking Voltage @ T
A
=100℃
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance ( Note 3 )
Operating Temperature Range
Storage Temperature Range
BY297
200
140
200
BY298
400
280
400
BY299
Units
800
V
560
V
800
V
A
A
V
uA
uA
nS
pF
O
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θ
JA
T
J
2.0
70
1.2
5.0
100
250
40
55
-65 to +150
-65 to +150
C/W
T
STG
Notes:1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
- 408 -
RATINGS AND CHARACTERISTIC CURVES (BY296 THRU BY299)
AVERAGE FORWARD CURRENT AMPERES
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
2.0
70
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
60
50
40
30
20
10
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
1.5
1.0
8.3ms Single Half Sine Wave
JEDEC Method
.5
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
0
0
25
50
75
100
o
125
150
175
AMBIENT TEMPERATURE. ( C)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
20
10
100
FIG.4- TYPICAL JUNCTION CAPACITANCE
INSTANTANEOUS FORWARD CURRENT. (A)
JUNCTION CAPACITANCE.(pF)
60
3.0
40
1.0
Tj=25
0
C
20
0.3
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
0.1
10
1
2
4
6
10
20
40
60
100
REVERSE VOLTAGE. (V)
.03
.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE. (V)
FIG.5- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
- 409 -
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参数对比
与BY297相近的元器件有:BY296、BY298、BY299。描述及对比如下:
型号 BY297 BY296 BY298 BY299
描述 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 2 A, SILICON, RECTIFIER DIODE 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 2 A, SILICON, RECTIFIER DIODE
是否Rohs认证 符合 符合 符合 符合
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code unknow unknow unknow unknow
配置 SINGLE SINGLE SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.3 V 1.3 V 1.3 V 1.3 V
湿度敏感等级 1 1 1 1
最大非重复峰值正向电流 70 A 70 A 70 A 70 A
元件数量 1 1 1 1
最高工作温度 150 °C 150 °C 150 °C 150 °C
最大输出电流 2 A 2 A 2 A 2 A
最大重复峰值反向电压 200 V 100 V 400 V 800 V
最大反向恢复时间 0.5 µs 0.5 µs 0.5 µs 0.5 µs
表面贴装 NO NO NO NO
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