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BYV13(Z)

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-15,

器件类别:分立半导体    二极管   

厂商名称:Galaxy Semi-Conductor Co Ltd

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Galaxy Semi-Conductor Co Ltd
包装说明
O-PALF-W2
Reach Compliance Code
unknown
ECCN代码
EAR99
应用
FAST RECOVERY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
JEDEC-95代码
DO-15
JESD-30 代码
O-PALF-W2
最大非重复峰值正向电流
60 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1.5 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
最大重复峰值反向电压
400 V
最大反向电流
5 µA
最大反向恢复时间
0.3 µs
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
文档预览
BL
GALAXY ELECTRICAL
FAST RECOVERY RECTIFIER
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
BYV12(Z)---BYV16(Z)
VOLTAGE RANGE: 100 --- 1000 V
CURRENT: 1.5 A
DO - 15
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYV
12
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BYV
13
400
280
400
BYV
14
600
420
600
1.5
BYV
15
800
560
800
BYV
16
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
60.0
A
Maximum instantaneous forw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.3
5.0
100.0
300
18
45
- 55---- +150
- 55---- +150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261044
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
t
rr
50
N.1.
10
N.1.
BYV12(Z)---BYV16(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
( - )
0
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
-0.25A
-1.0A
NOTES: 1. RISE TIM = 7ns M INP IM EDANCE = 1M . 22PF
E
AX. UT P
2. RISE TIM = 10ns M SOURCE IM EDANCE = 50
E
AX.
P
SET TIM BASEFOR 50/100 ns /cm
E
1cm
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
100
10
T
J
=25
Pulse Width=300
µ
S
FIG.3-- FORWARD DERATING CURRENT
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00
20
40
60
80
100
120 140
160 180
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
4
2
1.0
0.4
0.2
0 .1
0.06
0 .0 4
0.02
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
AMBIENT TEMPERATURE,
FIG.4-- PEAK FORWARD SURGE CURRENT
FIG.7 --TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT
AMPERES
80
70
60
50
40
30
20
10
0
1
2
4
8 10
20
40 60 80 100
200
JUNCTION CAPACITANCE,pF
T
J
=125
8.3m Single Half
s
Sine-W
ave
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
T
J
=25
f=1M
Hz
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0261044
BL
GALAXY ELECTRICAL
2.
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参数对比
与BYV13(Z)相近的元器件有:BYV12(Z)、BYV15(Z)、BYV16(Z)、BYV14(Z)。描述及对比如下:
型号 BYV13(Z) BYV12(Z) BYV15(Z) BYV16(Z) BYV14(Z)
描述 Rectifier Diode, 1 Phase, 1 Element, 1.5A, 400V V(RRM), Silicon, DO-15, Rectifier Diode, 1 Phase, 1 Element, 1.5A, 100V V(RRM), Silicon, DO-15, Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15, Rectifier Diode, 1 Phase, 1 Element, 1.5A, 1000V V(RRM), Silicon, DO-15, Rectifier Diode, 1 Phase, 1 Element, 1.5A, 600V V(RRM), Silicon, DO-15,
是否Rohs认证 符合 符合 符合 符合 符合
厂商名称 Galaxy Semi-Conductor Co Ltd Galaxy Semi-Conductor Co Ltd Galaxy Semi-Conductor Co Ltd Galaxy Semi-Conductor Co Ltd Galaxy Semi-Conductor Co Ltd
包装说明 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
应用 FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95代码 DO-15 DO-15 DO-15 DO-15 DO-15
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
最大非重复峰值正向电流 60 A 60 A 60 A 60 A 60 A
元件数量 1 1 1 1 1
相数 1 1 1 1 1
端子数量 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
最大重复峰值反向电压 400 V 100 V 800 V 1000 V 600 V
最大反向电流 5 µA 5 µA 5 µA 5 µA 5 µA
最大反向恢复时间 0.3 µs 0.3 µs 0.3 µs 0.3 µs 0.3 µs
表面贴装 NO NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL
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