BZT03-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
•
•
•
•
•
Glass passivated junction
Hermetically sealed package
e2
Clamping time in picoseconds
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949539
Applications
Medium power voltage regulators and medium power
transient suppression circuits
Mechanical Data
Case:
SOD-57 Sintered glass case
Weight:
approx. 369 mg
Packaging Codes/Options:
TAP / 5 k Ammopack (52 mm tape) / 25 k/box
TR / 5 k 10" reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power t
p
= 100
µs,
T
j
= 25 °C
dissipation
Junction temperature
Storage temperature range
Test condition
l = 10 mm, T
L
= 25 °C
T
amb
= 25 °C
Symbol
P
V
P
V
P
ZRM
P
ZSM
T
j
T
stg
Value
3.25
1.3
10
600
175
- 65 to + 175
Unit
W
W
W
W
°C
°C
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Test condition
l = 10 mm, T
L
= constant
on PC board with spacing 25 mm
Symbol
R
thJA
R
thJA
Value
46
100
Unit
K/W
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 0.5 A
Symbol
V
F
Min
Typ.
Max
1.2
Unit
V
Document Number 85599
Rev. 1.4, 13-Jul-05
www.vishay.com
1
BZT03-Series
Vishay Semiconductors
Electrical Characteristics
BZT03C...
Partnumber
Zener Voltage Range
Dynamic
Resistance
r
zj
and TK
VZ
@
I
Z
Ω
max
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
87
96
106
116
127
141
156
171
191
212
233
256
289
320
typ
1
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
350
400
450
450
max
2
2
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
750
850
1000
1000
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
2
2
2
2
Test
Curre
nt
I
ZT
mA
min
0
0
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
Temperature
Coefficient of
Zener Voltage
TC
VZ
@ I
ZT
%/K
max
0.07
0.07
0.07
0.08
0.08
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
Reverse
Leakage
Current
I
R
@ V
R
µA
max
1500
1000
750
600
20
10
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
V
Clamping
Stand-off
V
Z
@ I
ZT
V
min
BZT03C6V2
BZT03C6V8
BZT03C7V5
BZT03C8V2
BZT03C9V1
BZT03C10
BZT03C11
BZT03C12
BZT03C13
BZT03C15
BZT03C16
BZT03C18
BZT03C20
BZT03C22
BZT03C24
BZT03C27
BZT03C30
BZT03C33
BZT03C36
BZT03C39
BZT03C43
BZT03C47
BZT03C51
BZT03C56
BZT03C62
BZT03C68
BZT03C75
BZT03C82
BZT03C91
BZT03C100
BZT03C110
BZT03C120
BZT03C130
BZT03C150
BZT03C160
BZT03C180
BZT03C200
BZT03C220
BZT03C240
BZT03C270
BZT03C300
1)
2)
V
(CL)R1)
@
I
RMS
V
max
9.3
10.2
11.3
12.3
13.3
14.8
15.7
17.0
18.9
20.9
22.9
25.6
28.4
31.0
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
126
139
152
167
185
204
224
249
276
305
336
380
419
34.0
31.0
26.5
24.4
22.7
20.3
19.1
17.7
15.9
14.4
13.1
11.7
10.6
9.7
8.9
7.9
7.1
6.5
6.0
5.5
4.9
4.6
4.2
3.8
3.5
3.2
2.9
2.6
2.4
2.2
2.0
1.8
1.6
1.5
1.3
1.2
1.1
1.0
0.9
0.8
0.72
A
I
R
@ V
R 2)
µA
max
3000
2000
1500
1200
50
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
240
V
typ
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
240
270
300
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
124
138
153
168
188
208
228
251
280
10/1000 exp. falling pulse tp = 1000
µs
down to 50 %
Stand-off voltage = recommended suplly voltage
www.vishay.com
2
Document Number 85599
Rev. 1.4, 13-Jul-05
BZT03-Series
Vishay Semiconductors
Electrical Characteristics
BZT03D...
Partnumber
Zener Voltage Range
Dynamic
Resistance
r
zj
and TK
VZ
@
I
Z
Ω
max
6.8
7.5
8.25
9
10
11
12.1
13.2
14.3
16.5
17.6
19.8
22
24.2
26.4
29.7
33
36.3
39.6
42.9
47.3
51.7
56.1
61.6
68.2
74.8
82.5
90.2
100
110
121
132
143
165
176
198
220
242
264
297
typ
1
1
1
1
2
2
4
4
5
5
6
6
6
6
7
7
8
8
21
21
24
24
25
25
25
25
30
30
60
60
80
80
110
130
150
180
200
350
400
450
max
2
2
2
2
4
4
7
7
10
10
15
15
15
15
15
15
15
15
40
40
45
45
60
60
80
80
100
100
200
200
250
250
300
300
350
400
500
750
850
1000
100
100
100
100
50
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
2
2
2
Test
Curre
nt
I
ZT
mA
min
0
0
0
0.03
0.03
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
Temperature
Coefficient of
Zener Voltage
TC
VZ
@ I
ZT
%/K
max
0.07
0.07
0.07
0.08
0.08
0.09
0.1
0.1
0.1
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
Reverse
Leakage
Current
I
R
@ V
R
µA
max
1500
1000
750
600
20
10
4
3
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
4.4
4.8
5.3
5.9
6.5
7.1
7.9
8.6
9.3
10.6
11.6
12.6
14.4
15.8
17.2
19.4
21.5
23.5
25.8
28
31
33.5
36.5
40
44.5
49
54
59
65
71
79
86
93
106
116
126
144
158
172
194
V
Clamping
Stand-off
V
Z
@ I
ZT
V
min
BZT03D6V2
BZT03D6V8
BZT03D7V5
BZT03D8V2
BZT03D9V1
BZT03D10
BZT03D11
BZT03D12
BZT03D13
BZT03D15
BZT03D16
BZT03D18
BZT03D20
BZT03D22
BZT03D24
BZT03D27
BZT03D30
BZT03D33
BZT03D36
BZT03D39
BZT03D43
BZT03D47
BZT03D51
BZT03D56
BZT03D62
BZT03D68
BZT03D75
BZT03D82
BZT03D91
BZT03D100
BZT03D110
BZT03D120
BZT03D130
BZT03D150
BZT03D160
BZT03D180
BZT03D200
BZT03D220
BZT03D240
BZT03D270
1)
2)
V
(CL)R1)
@
I
RMS
V
max
9.5
10.5
11.6
12.6
13.7
15.2
16.2
17.5
19.1
21.8
23.4
26.3
29.2
31.9
34.6
39
43.5
47.5
51.5
56
62
67.5
73
81
89
97
107
117
130
143
157
172
187
213
229
256
284
314
364
388
34.0
31.0
26.5
24.4
22.7
20.3
19.1
17.7
15.9
14.4
13.1
11.7
10.6
9.7
8.9
7.9
7.1
6.5
6.0
5.5
4.9
4.6
4.2
3.8
3.5
3.2
2.9
2.6
2.4
2.2
2.0
1.8
1.6
1.5
1.3
1.2
1.1
1.0
0.9
0.8
A
I
R
@ V
R 2)
µA
max
3000
2000
1500
1200
50
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
4.8
5.3
5.9
6.5
7.1
7.9
8.6
9.3
10.6
11.6
12.6
14.4
15.8
17.2
19.4
21.5
23.5
25.8
28
31
33.5
36.5
40
44.5
49
54
59
65
71
79
86
93
106
116
126
144
158
172
194
215
V
typ
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
220
240
270
5.6
6.1
6.75
7.4
8.2
9
9.9
10.8
11.7
13.5
14.4
16.2
18
29.8
21.6
24.3
27
29.7
32.4
35.1
38.7
42.3
45.9
50.4
55.8
61.2
67.5
73.8
81.9
90
99
108
117
135
144
162
180
198
216
243
10/1000 exp. falling pulse tp = 1000
µs
down to 50 %
Stand-off voltage = recommended suplly voltage
Document Number 85599
Rev. 1.4, 13-Jul-05
www.vishay.com
3
BZT03-Series
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
50
3
I
F
Forward Current (A )
–
3.0
2.5
2.0
T
j
=25°C
1.5
1.0
0.5
0
25
50
7
2
94 9086a
94 9585
0
0.5
1.0
1.5
2.0
V
F
– Forward Voltage ( V )
Figure 1. Epoxy Glass Hard Tissue, Board Thickness 1.5 mm,
R
thJA
≤100
K/W
P
ZSM
– Non-Repetitive Surge Power
Dissipation (W )
Figure 3. Forward Current vs. Forward Voltage
P
tot
–Total Power Dissipation ( W )
4
l=10mm
3
15mm
2
20mm
1
see Fig.1
0
0
40
80
l
l
10000
T
j
=25°C
1000
T
L
=constant
100
120
160
200
94 9586
10
0.01
0.1
1
10
100
94 9584
T
amb
– Ambient T
emperature ( °C )
t
p
– Pulse Length ( ms )
Figure 2. Total Power Dissipation vs. Ambient Temperature
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse
Length
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
3.6 (0.140)max.
Cathode Identification
ISO Method E
94 9538
0.82 (0.032) max.
26(1.014) min.
4.0 (0.156) max.
26(1.014) min.
www.vishay.com
4
Document Number 85599
Rev. 1.4, 13-Jul-05
BZT03-Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85599
Rev. 1.4, 13-Jul-05
www.vishay.com
5
