BZT585B2V4T - BZT585B43T
SURFACE MOUNT PRECISION ZENER DIODE
Features
•
•
•
•
•
•
±2.0% Tolerance on Breakdown Voltage
Small, Low Profile Surface Mount Package
Flat Lead Package Design for Low Profile and High Power
Dissipation
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOD523
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Band
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.001 grams (approximate)
Top View
Ordering Information
(Note 4)
Part Number
(Type Number)-7* (Note 4)
Notes:
Case
SOD523
Packaging
3000/Tape & Reel
*Add “-7” to the appropriate type number in Electrical Characteristics Table, example: 6.2V Zener = BZT585B6V2T-7.
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
xx
xx = Product Type Marking Code
(See Electrical Characteristics Table)
BZT585B2V4T - BZT585B43T
Document number: DS36638 Rev. 5 - 2
1 of 4
www.diodes.com
March 2014
© Diodes Incorporated
BZT585B2V4T - BZT585B43T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Forward Voltage
@ I
F
= 10mA
@ I
F
= 100mA
Continuous Forward Current
Symbol
V
F
I
F
Value
0.9
1.1
200
Unit
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
Note:
Symbol
P
D
R
θJA
T
J,
T
STG
Value
350
357
-65 to +150
Unit
mW
°C/W
°C
5. Device mounted on FR-4 PCB with minimum recommended pad layout, as shown in Diodes Incorporated’s Suggested Pad Layout document, which can
be found on our website at http://www.diodes.com.
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Zener Voltage Range
(Note 6)
Type
Number
Marking
Codes
V
Z
@ I
ZT
I
ZT
Maximum Zener
Impedance (Note 7)
Z
ZT
@ Z
ZK
@
I
ZT
I
ZK
Ω
100
100
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
40
45
55
55
70
80
80
80
90
130
150
400
450
500
500
500
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
I
ZK
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
Temperature
Coefficient
TC @ I
ZT
Typical
(mV/°C)
-1.3
-1.4
-1.8
-1.9
-1.9
-1.7
-1.2
-0.5
1.0
2.2
3.0
3.8
4.7
5.8
7.0
8.2
9.5
10.7
13.2
14.4
16.9
19.4
21.9
24.4
25.4
31.1
36.7
42.4
48.1
55.7
Total Capacitance
C
T
@ f = 1MHz,
V
R
= 0V
Max
(pF)
450
440
410
390
370
350
325
300
275
250
215
170
150
120
110
110
105
105
100
90
80
70
60
55
50
50
45
45
45
40
Maximum
Reverse
Current
(Note 6)
I
R
µA
50
20
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
@ V
R
V
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
30.1
Nom (V) Min (V) Max (V) mA
BZT585B2V4T
BZT585B2V7T
BZT585B3V3T
BZT585B3V6T
BZT585B3V9T
BZT585B4V3T
BZT585B4V7T
BZT585B5V1T
BZT585B5V6T
BZT585B6V2T
BZT585B6V8T
BZT585B7V5T
BZT585B8V2T
BZT585B9V1T
BZT585B10T
BZT585B11T
BZT585B12T
BZT585B13T
BZT585B15T
BZT585B16T
BZT585B18T
BZT585B20T
BZT585B22T
BZT585B24T
BZT585B27T
BZT585B30T
BZT585B33T
BZT585B36T
BZT585B39T
BZT585B43T
Notes:
3C
3E
3H
3J
3K
3L
3M
3N
3P
3S
3T
3U
3V
3X
3Y
3Z
4A
4B
4D
4E
4F
4G
4H
4J
4K
4M
4N
4P
4R
4S
2.4
2.7
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
2.35
2.65
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.78
11.76
12.74
14.70
15.68
17.64
19.60
21.56
23.52
26.46
29.40
32.34
35.28
38.22
42.14
2.45
2.75
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.22
12.24
13.26
15.30
16.32
18.36
20.40
22.44
24.48
27.54
30.60
33.66
36.72
39.78
43.86
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
6. Short duration pulse test used to minimize self-heating effect.
7. f = 1kHz.
BZT585B2V4T - BZT585B43T
Document number: DS36638 Rev. 5 - 2
2 of 4
www.diodes.com
March 2014
© Diodes Incorporated
BZT585B2V4T - BZT585B43T
I
F
, INSTANTANEOUS FORWARD CURRENT(mA)
0.4
Note 5
1000
T
A
= 150°C
P
D
, POWER DISSIPATION (W)
0.3
100
T
A
= 125°C
0.2
10
T
A
= 85°C
T
A
= 25°C
0.1
1
T
A
= -55°C
0
0
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 1 Power Derating Curve
T
J
= 25°C
150
0.1
200
400
600
800 1000 1200 1400 1600
V
F
, INSTANTANEOUS FORWARD VOLTAGE(mV)
Figure 2 Typical Forward Characteristics
30
50
6V2
T
J
= 25°C
15
20
22
27
24
30
33
36
39
I
Z
, ZENER CURRENT (mA)
40
10
43
I
Z
, ZENER CURRENT (mA)
30
2V4
2V7
20
20
10
10
0
0
3 4 5 6 7 8 9 10 11 12
V
Z
, ZENER VOLTAGE (V)
Figure 3 Typical Zener Breakdown Characteristics
1
2
0
10
20
30
40
50
V
Z
, ZENER VOLTAGE (V)
Figure 4 Typical Zener Breakdown Characteristics
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
L
C
H
A
B
K
M
SOD523
Dim
Min
Max
A
0.25
0.35
B
0.70
0.90
C
1.50
1.70
H
1.10
1.30
K
0.55
0.65
L
0.10
0.30
M
0.10
0.12
All Dimensions in mm
BZT585B2V4T - BZT585B43T
Document number: DS36638 Rev. 5 - 2
3 of 4
www.diodes.com
March 2014
© Diodes Incorporated
BZT585B2V4T - BZT585B43T
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
X1
X
Y
Dimensions Value (in mm)
G
0.80
X
0.60
X1
2.00
Y
0.70
G
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
BZT585B2V4T - BZT585B43T
Document number: DS36638 Rev. 5 - 2
4 of 4
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March 2014
© Diodes Incorporated
