DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D054
BZV55 series
Voltage regulator diodes
Product specification
Supersedes data of 1996 Apr 26
1999 May 21
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 500 mW
•
Two tolerance series:
±2%
and
approx.
±5%
•
Working voltage range:
nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
Low-power voltage stabilizers or
voltage references.
The cathode is indicated by a yellow band.
handbook, 4 columns
BZV55 series
DESCRIPTION
Low-power voltage regulator diodes in small hermetically sealed glass
SOD80C SMD packages. The diodes are available in the normalized E24
±2%
(BZV55-B) and approx.
±5%
(BZV55-C) tolerance range. The series consists of
37 types with nominal working voltages from 2.4 to 75 V.
k
a
MAM215
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on a ceramic substrate of 10
×
10
×
0.6 mm.
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
≤50 °C;
note 1
tie-point
≤50 °C;
note 1
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.3
CONDITIONS
MIN.
−
MAX.
250
UNIT
mA
see Tables
1 and 2
−
−
−
−65
−65
400
500
40
+200
+200
mW
mW
W
°C
°C
1999 May 21
2
Philips Semiconductors
Product specification
Voltage regulator diodes
ELECTRICAL CHARACTERISTICS
Total BZV55-B and C series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZV55-B/C2V4
BZV55-B/C2V7
BZV55-B/C3V0
BZV55-B/C3V3
BZV55-B/C3V6
BZV55-B/C3V9
BZV55-B/C4V3
BZV55-B/C4V7
BZV55-B/C5V1
BZV55-B/C5V6
BZV55-B/C6V2
BZV55-B/C6V8
BZV55-B/C7V5
BZV55-B/C8V2
BZV55-B/C9V1
BZV55-B/C10
BZV55-B/C11
BZV55-B/C12
BZV55-B/C13
BZV55-B/C15 to 75
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 0.7V
Znom
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
CONDITIONS
I
F
= 10 mA; see Fig.4
BZV55 series
MAX.
0.9
UNIT
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
1999 May 21
3
1999 May 21
4
Philips Semiconductors
Table 1
Per type BZV55-B/C2V4 to
B/C24
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
Tol.
±2%
(B)
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.60
21.60
23.50
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.40
22.40
24.50
Tol. approx.
±5%
(C)
MIN.
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
MAX.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
at
I
Ztest
= 1 mA
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
50
50
60
60
60
MAX.
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
at
I
Ztest
= 5 mA
TYP.
70
75
80
85
85
85
80
50
40
15
6
6
6
6
6
8
10
10
10
10
10
10
15
20
25
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
MIN.
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
TYP.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
16.4
18.4
20.4
MAX.
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 5 and 6)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
Voltage regulator diodes
BZV55-B
or C
XXX
MAX.
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
BZV55 series
Product specification
1999 May 21
5
Philips Semiconductors
Table 2
Per type BZV55-B/C27 to
B/C75
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 2 mA
Tol.
±2%
(B)
MIN.
27
30
33
36
39
43
47
51
56
62
68
75
26.50
29.40
32.30
35.30
38.20
42.10
46.10
50.00
54.90
60.80
66.60
73.50
MAX.
27.50
30.60
33.70
36.70
39.80
43.90
47.90
52.00
57.10
63.20
69.40
76.50
Tol. approx.
±5%
(C)
MIN.
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
MAX.
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
at
I
Ztest
= 0.5 mA
TYP.
65
70
75
80
80
85
85
90
100
120
150
170
MAX.
300
300
325
350
350
375
375
400
425
450
475
500
at
I
Ztest
= 2 mA
TYP.
25
30
35
35
40
45
50
60
70
80
90
95
MAX.
80
80
80
90
130
150
170
180
200
215
240
255
MIN.
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
TYP.
23.4
26.6
29.7
33.0
36.4
41.2
46.1
51.0
57.0
64.4
71.7
80.2
MAX.
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 2 mA
(see Figs 5 and 6)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.25
0.2
Voltage regulator diodes
BZV55-B
or C
XXX
MAX.
50
50
45
45
45
40
40
40
40
35
35
35
BZV55 series
Product specification
