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BZW50-33RL

ESD Suppressors / TVS Diodes 5000W 33V Unidirect

器件类别：分立半导体    二极管   

厂商名称：ST(意法半导体)

厂商官网：http://www.st.com/

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器件参数
参数名称
属性值
Brand Name
STMicroelectronics
厂商名称
ST(意法半导体)
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Factory Lead Time
11 weeks
其他特性
UL RECOGNIZED
最小击穿电压
36.6 V
外壳连接
ISOLATED
最大钳位电压
76 V
配置
SINGLE
最小二极管电容
5750 pF
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值反向功率耗散
5000 W
元件数量
1
端子数量
2
最高工作温度
175 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度（摄氏度）
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
6.5 W
认证状态
Not Qualified
最大重复峰值反向电压
33 V
最大反向电流
5 µA
表面贴装
NO
技术
AVALANCHE
端子面层
Matte Tin (Sn) - annealed
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
BZW50
Transil™, transient voltage surge suppressor (TVS)
Datasheet
production data
Features
■
■
■
■
■
■
Peak pulse power: 5000 W (10/1000 µs)
Stand-off voltage range from 10 V to 180 V
Unidirectional and bidirectional types
Low clamping factor
Fast response time
UL497B, file number: QVGQ2.E136224
R6
Description
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particularly
suited to protect voltage sensitive devices such as
MOS Technology and low voltage supplied ICs.
TM:Transil is a trademarks of STMicroelectronics.
December 2012
This is information on a product in full production.
Doc ID 2973 Rev 5
1/8
www.st.com
8
Characteristics
BZW50
1
Table 1.
Symbol
P
PP
P
I
FSM
T
stg
T
j
T
L
Characteristics
Absolute maximum ratings (T
amb
= 25 °C)
Parameter
Peak pulse power dissipation
(1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current for unidirectional types
Storage temperature range
Maximum operating junction temperature
Maximum lead temperature for soldering during 10 s at 5 mm from case.
T
j initial
= T
amb
T
amb
= 75 °C
t
p
= 10 ms
T
j initial
= T
amb
Value
5000
6.5
500
-65 to + 175
175
260
Unit
W
W
A
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol
R
th(j-l)
R
th(j-a)
Thermal resistances
Parameter
Junction to leads
Junction to ambient on printed circuit. L
lead
= 10 mm
Value
15
°C/W
65
Unit
Figure 1.
Electrical characteristics - definitions
I
I
I
PP
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
α
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
Unidirectional
I
F
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
Figure 2.
Pulse definition for electrical characteristics
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
tr
tp
2/8
Doc ID 2973 Rev 5
BZW50
Table 3.
Electrical characteristics - values (T
amb
= 25 °C)
I
RM
@ V
RM
Order code
max
Unidirectional
BZW50-10
BZW50-12
BZW50-15
BZW50-18
BZW50-22
BZW50-27
BZW50-33
BZW50-39
BZW50-47
BZW50-56
BZW50-68
BZW50-82
BZW50-100
BZW50-120
BZW50-150
BZW50-180
Bidirectional
BZW50-10B
BZW50-12B
BZW50-15B
BZW50-18B
BZW50-22B
BZW50-27B
BZW50-33B
BZW50-39B
BZW50-47B
BZW50-56B
BZW50-68B
BZW50-82B
BZW50-100B
BZW50-120B
BZW50-150B
BZW50-180B
µA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
V
10
12
15
18
22
27
33
39
47
56
68
82
100
120
150
180
min
V
11.1
13.3
16.6
20
24.4
30
36.6
43.3
52
62.2
75.6
91
111
133
166
200
mA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
BR
@ I
R(1)
V
CL
@ I
PP
10/1000 µs
max
V
18.8
22
26.9
32.2
39.4
48.3
59
69.4
83.2
99.6
121
145
179
215
269
322
A
266
227
186
155
127
103
85
72
60.1
50
41
34
28
23
19
16
V
CL
@ I
PP
8/20µs
max
V
23.4
28
35
41.5
51
62
76
90
108
129
157
189
228
274
343
410
A
2564
2143
1714
1446
1177
968
789
667
556
465
382
317
263
219
175
146
Characteristics
T
(2)
max
10
-4
/ °C
7.8
8.4
8.8
9.2
9.6
9.8
10
10.1
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
C
(3)
typ
pF
24000
18500
13500
11500
8500
7000
5750
4800
4100
3400
3000
2600
2300
1900
1700
1500
1. Pulse test: t
p
< 50 ms.
2.
V
BR
=
T
· (T
amb
- 25) · V
BR
(25°C).
3. V
R
= 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2.
Doc ID 2973 Rev 5
3/8
Characteristics
BZW50
Figure 3.
Peak power dissipation vs. initial
junction temperature
(printed circuit board)
Figure 4.
Peak pulse power vs. exponential
pulse duration
%
Ppp (W)
1E7
100
1E6
Tj initial(°C)
80
1E5
60
40
20
Tj initial(°C)
1E4
1E3
0
0
20
40
60
80 100 120 140 160 180 200
1E2
0.001
0.01
0.1
1
tp(ms)EXPO.
10
100
Figure 5.
Clamping voltage vs. peak pulse
current
(1)
Figure 6.
Capacitance vs. reverse applied
voltage for unidirectional types
(typical values).
V (V)
CL
1000
% Ipp
100
50
C (nF)
100
Tj initial(°C)
BZW50-180
0
tr
tp
t r < 10
s
t
B ZW 5
0 - 10
10
B ZW 5
0-18
B ZW 5
0-39
B ZW 5
0-82
B ZW 5
0 - 18 0
Tj= 25 °C
F = 1 MHz
BZW50- 82
100
BZW50- 82
39
1
BZW50- 12
18
BZW50- 12
10
10
0.1
1
10
100
1000
Ipp (A)
10000
V R (V)
0.1
1
10
100
500
1. The curves in
Figure 5
are specified for a junction temperature of 25 °C before surge. The given results may be
extrapolated for other junction temperatures by using the following formula:
V
BR
=
T
x [T
amb
-25] x V
BR
(25 °C)
For intermediate voltages, extrapolate the given results.
Figure 7.
Capacitance vs. reverse applied
voltage for bidirectional types
(typical values)
Figure 8.
Peak forward voltage drop vs. peak
forward current for unidirectional
types (typical value).
(1)
C (nF)
100
Tj= 25 °C
F = 1 MHz
10
1
B ZW 5
0-10B
B ZW 5
0-18B
B ZW 5
0-39B
BZW 50-8
2B
B ZW 5
0 - 1 8 0B
V R (V)
0.1
1
10
100
500
1. Multiply by 2 for units with V
BR
> 220 V.
4/8
Doc ID 2973 Rev 5
BZW50
Ordering information scheme
Figure 9.
Transient thermal impedance
junction to ambient vs. pulse
duration
Figure 10. Relative variation of leakage
current vs. junction temperature
100
Zth (j-a) (°C/W)
10
t
p
(s)
1
0.01
0.1
1
10
100
1000
2
Ordering information scheme
Figure 11. Ordering information scheme
BZW
50
10
CA
RL
Transil
Peak Pulse Power
50 = 5000 W
Breakdown Voltage
100 = 100 V
Types
A = Unidirectional
CA = Bidirectional
Packaging
Blank = Ammopack tape
RL = Tape and reel
Doc ID 2973 Rev 5
5/8
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参数对比
与BZW50-33RL相近的元器件有：BZW50-120B、BZW50-27B、BZW50-39、BZW50-15B、BZW50-82RL。描述及对比如下：
型号 BZW50-33RL BZW50-120B BZW50-27B BZW50-39 BZW50-15B BZW50-82RL
描述 ESD Suppressors / TVS Diodes 5000W 33V Unidirect RF Amplifier .05GHz to 4GHz 35.5dBm OIP3 Motor / Motion / Ignition Controllers u0026 Drivers REVERSE MOTOR DRIVER 8PIN Heavy Duty Power Connectors PP15/45 FINGERPROOF HSG ONLY BLK -BULK 8-bit Microcontrollers - MCU 256kB Flash 4kB EEPROM 86 I/O Pins ESD Suppressors / TVS Diodes SOT-23 7V 600W Low Capacitance
Brand Name STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
包装说明 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
针数 2 2 2 2 2 2
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
最小击穿电压 36.6 V 133 V 30 V 43.3 V 16.6 V 91 V
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
最大钳位电压 76 V 274 V 62 V 90 V 35 V 189 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最小二极管电容 5750 pF 950 pF 3500 pF 4800 pF 6750 pF 2600 pF
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
JESD-609代码 e3 e3 e3 e3 e3 e3
最大非重复峰值反向功率耗散 5000 W 5000 W 5000 W 5000 W 5000 W 5000 W
元件数量 1 1 1 1 1 1
端子数量 2 2 2 2 2 2
最高工作温度 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性 UNIDIRECTIONAL BIDIRECTIONAL BIDIRECTIONAL UNIDIRECTIONAL BIDIRECTIONAL UNIDIRECTIONAL
最大功率耗散 6.5 W 6.5 W 6.5 W 6.5 W 6.5 W 6.5 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 33 V 120 V 27 V 39 V 15 V 82 V
最大反向电流 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
表面贴装 NO NO NO NO NO NO
技术 AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子面层 Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) - ST(意法半导体)
Factory Lead Time 11 weeks 11 weeks 11 weeks 11 weeks - 11 weeks
击穿电压标称值 - 148 V 33 V 48 V 18 V -
Base Number Matches - 1 1 1 1 1
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器件捷径:
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