JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
C1815
FEATURES
Power dissipation
MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
, T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction and Storage Temperature
Value
60
50
5
150
400
-55-150
Units
V
V
V
mA
mW
℃
3.BASE
TRANSISTOR (NPN)
TO—92
1.EMITTER
2.COLLECTOR
1 2 3
*These ratings are limiting values above which the serviceability
of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Noise Figure
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
V
CE
(sat)
V
BE
(sat)
f
T
Cob
NF
unless
Test
otherwise
specified）
TYP
MAX
UNIT
V
V
V
0.1
0.1
0.1
uA
uA
uA
conditions
MIN
60
50
5
Ic= 100 uA, I
E
=0
Ic= 0. 1 mA, I
B
=0
I
E
= 100 uA, I
C
=0
V
CB
= 60
V
CE
= 50
V
EB
=
V
CE
=
5
V,
V,
I
E
=0
I
B
=0
V, I
C
=0
I
C
= 2mA
70
6 V,
700
0.25
1
V
V
MHz
3.5
10
pF
dB
I
C
= 100mA, I
B
= 10 mA
I
C
= 100 mA, I
B
= 10mA
V
CE
= 10 V, I
C
= 1mA
f=30MHz
VCB=10V,IE=0
f=1MHZ
V
CE
= 6 V, I
C
=0.1 mA
f =1KHz,RG=10K
80
CLASSIFICATION OF
Rank
Range
h
FE(1)
O
70-140
Y
120-240
GR
200-400
BL
350-700
Typical Characteristics
C1815
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