JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
C945
FEATURE
Excellent h
FE
Linearity
Low noise
Complementary to A733
MARKING:CR·
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
TRANSISTOR (NPN)
SOT-23
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
NF
Test conditions
I
C
=100uA, I
E
=0
I
C
=1mA , I
B
=0
I
E
=0.1mA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=55V,R=10MΩ
V
EB
=5V ,
V
CE
=6 V ,
V
CE
=6 V ,
I
C
=0
I
C
=1mA
I
C
=0.1mA
130
40
0.3
1
150
3.0
4
10
V
V
MHz
pF
dB
Min
60
50
5
0.1
0.1
0.1
400
Typ
Max
Unit
V
V
V
uA
uA
uA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V,I
C
=10mA,f =30 MHz
V
CB
=10V,I
E
=0,f=1MH
Z
V
CE
=
6V,I
C
=0.1
mA
R
g
=10
kΩ
,f=1k
MH
Z
CLASSIFICATION OF h
FE(1)
Rank
Range
L
130-200
H
200-400
A,May,2011
Typical Characteristics
12
C945
h
FE
——
I
C
T
a
=100
℃
T
a
=25
℃
Static Characteristic
30uA
COMMON
EMITTER
T
a
=25
℃
1000
(mA)
10
I
C
COLLECTOR CURRENT
8
21uA
18uA
DC CURRENT GAIN
9uA
6uA
I
B
=3uA
24uA
h
FE
300
100
30
27uA
6
15uA
12uA
4
2
V
CE
=6V
12
10
0.7
1
3
10
30
100
150
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
——
300
I
C
1000
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
800
100
T
a
=25
℃
T
a
=100
℃
T
a
=25
℃
30
600
T
a
=100
℃
400
10
1
3
10
30
β=10
100
150
200
0.1
β=10
0.3
1
3
10
30
100 150
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
15
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 /I
C
=0
T
a
=25
℃
0.25
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(W)
10
0.20
(pF)
C
10
C
ib
0.15
CAPACITANCE
0.10
5
C
ob
0.05
0
0.1
0.00
0.3
1
3
0
25
50
75
100
125
150
REVERSE BIAS VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
A,May,2011
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