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CAT24FC32AW-TE13

EEPROM, 4KX8, Serial, CMOS, PDSO8, LEAD FREE, SOIC-8

器件类别：存储    存储   

厂商名称：Catalyst

厂商官网：http://www.catalyst-semiconductor.com/

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Catalyst
零件包装代码
SOIC
包装说明
SOP, SOP8,.25
针数
8
Reach Compliance Code
unknown
ECCN代码
EAR99
最大时钟频率 (fCLK)
0.4 MHz
数据保留时间-最小值
100
耐久性
1000000 Write/Erase Cycles
I2C控制字节
1010DDDR
JESD-30 代码
R-PDSO-G8
JESD-609代码
e3
长度
4.9 mm
内存密度
32768 bit
内存集成电路类型
EEPROM
内存宽度
8
功能数量
1
端子数量
8
字数
4096 words
字数代码
4000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
4KX8
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
SERIAL
峰值回流温度（摄氏度）
260
电源
2/3.3 V
认证状态
Not Qualified
座面最大高度
1.75 mm
串行总线类型
I2C
最大待机电流
9e-7 A
最大压摆率
0.003 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
1.8 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
MATTE TIN
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
宽度
3.9 mm
最长写入周期时间 (tWC)
5 ms
写保护
HARDWARE
文档预览
Preliminary Information
CAT24FC32A
32K-Bit Fast Mode I
2
C Serial CMOS EEPROM
FEATURES
s
Fast mode I
2
C bus compatible*
s
Max clock frequency:
s
Output slope control to eliminate ground
bounce
s
Zero standby current
s
Commercial, industrial and automotive
400 kHz for V
CC
=1.8V to 3.6V
s
Hardware write protect for entire array
s
Cascadable for up to eight devices
s
32-Byte page or byte write modes
s
Self-timed write cycle with autoclear
s
5 ms max write cycle time
s
Random and sequential read modes
s
Schmitt trigger and spike suppression at SDA
temperature ranges
s
1,000,000 program/erase cycles
s
100 years data retention
s
8-pin PDIP, 8-pin SOIC (150 and 200 mil) and
8-pin TSSOP packages
and SCL inputs
DESCRIPTION
The CAT24FC32A is a 32K-bit Serial CMOS EEPROM
internally organized as 4Kx8 bits. The device is
compatible with Fast-mode I
2
C bus specification and
operates down to 1.8V with a bit rate up to 400 kbit/s.
Extended addressing capability allows up to 8 devices
to share the same bus. Catalyst's advanced CMOS
technology substantially reduces device power
requirements. The device is optimized for high
performance applications, where low power, low voltage
and high speed operation are required.
CAT24FC32A is available in 8-pin DIP, 8-pin SOIC
(JEDEC and EIAJ) and 8-pin TSSOP packages.
PIN CONFIGURATION
DIP Package (P, L)
A0
A1
A2
VSS
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
BLOCK DIAGRAM
EXTERNAL LOAD
DOUT
SENSE AMPS
SHIFT REGISTERS
TSSOP Package (U, Y)
A0
A1
A2
VSS
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
VCC
VSS
ACK
WORD ADDRESS
BUFFERS
COLUMN
DECODERS
256
SDA
START/STOP
LOGIC
SOIC Package (J,W) (K, X)
A0
A1
A2
VSS
1
2
3
4
8
7
6
5
VCC
WP
SCL
SDA
WP
CONTROL
LOGIC
XDEC
128
EEPROM
128 X 256
DATA IN STORAGE
HIGH VOLTAGE/
TIMING CONTROL
SCL
A0
A1
A2
STATE COUNTERS
SLAVE
ADDRESS
COMPARATORS
* Catalyst Semiconductor is licensed by Philips Corporation to carry the I
2
C Bus Protocol.
© 2003 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 1048, Rev. B
CAT24FC32A
Preliminary Information
PIN FUNCTIONS
Pin Name
A0, A1, A2
SDA
SCL
WP
V
CC
V
SS
Function
Device Address Inputs
Serial Data/Address
Serial Clock
Write Protect
Power Supply
Ground
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground
(1)
........... –2.0V to +V
CC
+ 2.0V
V
CC
with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (T
A
= 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(2)
........................ 100mA
RELIABILITY CHARACTERISTICS
Symbol
N
END(3)
T
DR(3)
V
ZAP(3)
I
LTH(3)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-up
Min.
1,000,000
100
2000
100
Max.
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of
the device at these or any other conditions outside of those
listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for
extended periods may affect device performance and
reliability.
Units
Cycles/Byte
Years
Volts
mA
Reference Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
RECOMMENDED OPERATING CONDITIONS
Temperature Range
Commercial
Industrial
Minimum
0˚C
-40˚C
Maximum
+70˚C
+85˚C
Supply Voltage Range
1.8V to 3.6V
Device
CAT24FC32A
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+ 2.0V for periods of less than 20ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V
CC
+1V.
Doc. No. 1048, Rev. B
2
Preliminary Information
D.C. OPERATING CHARACTERISTICS
Over recommended operating conditions, unless otherwise specified
Symbol
I
LI
I
LO
I
CC1
I
CC2
I
SB(1)
V
IL(2)
V
IH(2)
V
OL1
V
OL2
Parameter
Input Leakage Current
(4)
Output Leakage Current
(4)
Power Supply Current
(Operating Write)
Power Supply Current
(Operating Read)
Standby Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
-0.5
0.7V
CC
0
0.3V
CC
V
CC
+ 0.5
0.4
0.2V
CC
µA
V
V
V
V
400
µA
Min.
-10
-10
Typ.
Max.
10
10
3
Units
µA
µA
mA
CAT24FC32A
Test Conditions
V
IN
= GND to V
CC
V
IN
= GND to V
CC
f
SCL
= 400kHz
V
CC
= 3.6V
f
SCL
= 400kHz
V
CC
= 3.6V
V
CC
= 3.6V
V
IN
= GND or V
CC
2.5V
≤
V
CC
≤
3.6V
I
OL
= 3.0 mA
1.8V
≤
V
CC
< 2.5V
I
OL
= 3 mA
CAPACITANCE
T
A
= 25°C, f = 1.0 MHz, V
CC
= 3.6V
Symbol
C
I/O(3)
C
IN(3)
Test
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, A2, SCL, WP)
Max.
8
6
Units
pF
pF
Conditions
V
I/O
= 0V
V
IN
= 0V
Note:
(1) Standby current, I
SB
< 900 nA; A0, A1, A2, WP connected to GND; SCL, SDA = GND or VCC.
(2) V
IL
min and V
IH
max are reference values only and are not tested.
(3) This parameter is characterized initially and after a design or process change that affects the parameter. Not 100% tested.
(4) I/O pins, SDA and SCL do not obstruct the bus lines if V
CC
is switched off.
3
Doc. No. 1048, Rev. B
CAT24FC32A
Preliminary Information
A.C. CHARACTERISTICS
Over recommended operating conditions, unless otherwise specified (Note 1).
VCC=1.8V - 3.6V
Symbol
f
SCL
t
SP
t
LOW
t
HIGH
t
R(2)
t
F(2)
t
HD:STA
t
SU:STA
t
HD:DAT
t
SU:DAT
t
SU:STO
t
SU:WP
t
HD:WP
t
AA
t
DH
t
BUF(2)
t
OF(2)
t
WC(3)
Parameter
Clock Frequency
Input Filter Spike Suppression (SDA, SCL)
Clock Low Period
Clock High Period
SDA and SCL Rise Time
SDA and SCL Fall Time
Start Condition Hold Time
Start Condition Setup Time (for a
Repeated Start)
Data Input Hold Time
Data In Setup Time
Stop Condition Setup Time
WP Setup Time
WP Hold Time
SCL Low to Data Out Valid
Data Out Hold Time
Time the Bus must be Free Before a New
Transmission Can Start
Output Fall Time from V
IH
min to V
IL
max
Write Cycle Time (Byte or Page)
50
1.3
20
250
5
1.3
0.6
20
20
0.6
0.6
0
100
0.6
0
2.5
900
300
300
Min
Typ
Max
400
50
Units
kHz
ns
µs
µs
ns
ns
µs
µs
ns
ns
µs
µs
µs
ns
ns
µs
ns
ms
Power-Up Timing
(2)(4)
Symbol
t
PUR
t
PUW
Parameter
Power-Up to Read Operation
Power-Up to Write Operation
Min
Typ
Max
1
1
Units
ms
ms
Note:
(1) Test Conditions according to "AC Test Conditions" Table.
(2) This parameter is characterized initially and after a design or process change that affects the parameter. Not 100% tested.
(3) The write cycle time is the time from a valid stop condition of a write sequence to the end of the internal program/erase cycle. During the
write cycle, the bus interface circuits are disabled, SDA is allowed to remain high and the device does not respond to its slave address.
(4) t
PUR
and t
PUW
are the delays required from the time V
CC
is stable until the specified operation can be initiated.
Doc. No. 1048, Rev. B
4
Preliminary Information
AC TEST CONDITIONS
Input pulse voltages
Input rise and fall times
Input reference voltages
Output reference voltages
Output load
0.2V
CC
to 0.8V
CC
≤
50 ns
0.3V
CC
, 0.7V
CC
0.5V
CC
Current source: I
OL
= 3mA;
CAT24FC32A
CL: 400pF for f
SCl
max = 400kHz / 100pF for f
SCL
max = 1 MHz
Figure 1. Bus Timing
tF
tLOW
SCL
tSU:STA
tHD:STA
tHD:DAT
tSU:DAT
tSU:STO
tHIGH
tLOW
tR
SDA IN
tAA
SDA OUT
tDH
tBUF
Figure 2. WP Timing
2nd Byte Address
1
SCL
A7
A0
tSU:WP
Data
9
1
8
8
SDA
D7
D0
WP
tHD:WP
Figure 3. Write Cycle Timing
SCL
SDA
8TH BIT
BYTE n
ACK
tWR
STOP
CONDITION
START
CONDITION
ADDRESS
5
Doc. No. 1048, Rev. B
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参数对比
与CAT24FC32AW-TE13相近的元器件有：CAT24FC32AY-TE13、CAT24FC32AU-TE13、CAT24FC32AJ-TE13、CAT24FC32AP、CAT24FC32AL、CAT24FC32AK-TE13、CAT24FC32AX-TE13。描述及对比如下：
型号 CAT24FC32AW-TE13 CAT24FC32AY-TE13 CAT24FC32AU-TE13 CAT24FC32AJ-TE13 CAT24FC32AP CAT24FC32AL CAT24FC32AK-TE13 CAT24FC32AX-TE13
描述 EEPROM, 4KX8, Serial, CMOS, PDSO8, LEAD FREE, SOIC-8 EEPROM, 4KX8, Serial, CMOS, PDSO8, LEAD FREE, TSSOP-8 EEPROM, 4KX8, Serial, CMOS, PDSO8, TSSOP-8 EEPROM, 4KX8, Serial, CMOS, PDSO8, SOIC-8 EEPROM, 4KX8, Serial, CMOS, PDIP8, PLASTIC, DIP-8 EEPROM, 4KX8, Serial, CMOS, PDIP8, LEAD FREE, PLASTIC, DIP-8 EEPROM, 4KX8, Serial, CMOS, PDSO8, SOIC-8 EEPROM, 4KX8, Serial, CMOS, PDSO8, LEAD FREE, SOIC-8
是否Rohs认证 符合 符合 不符合 不符合 不符合 符合 不符合 符合
零件包装代码 SOIC SOIC SOIC SOIC DIP DIP SOIC SOIC
包装说明 SOP, SOP8,.25 TSSOP, TSSOP8,.25 TSSOP, TSSOP8,.25 SOP, SOP8,.25 DIP, DIP8,.3 DIP, DIP8,.3 SOP, SOP8,.3 SOP, SOP8,.3
针数 8 8 8 8 8 8 8 8
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大时钟频率 (fCLK) 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz 0.4 MHz
数据保留时间-最小值 100 100 100 100 100 100 100 100
耐久性 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles
I2C控制字节 1010DDDR 1010DDDR 1010DDDR 1010DDDR 1010DDDR 1010DDDR 1010DDDR 1010DDDR
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDIP-T8 R-PDIP-T8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e3 e3 e0 e0 e0 e3 e0 e3
长度 4.9 mm 4.4 mm 4.4 mm 4.9 mm 9.59 mm 9.59 mm 4.9 mm 4.9 mm
内存密度 32768 bit 32768 bit 32768 bit 32768 bit 32768 bit 32768 bit 32768 bit 32768 bit
内存集成电路类型 EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM
内存宽度 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1
端子数量 8 8 8 8 8 8 8 8
字数 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words 4096 words
字数代码 4000 4000 4000 4000 4000 4000 4000 4000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 4KX8 4KX8 4KX8 4KX8 4KX8 4KX8 4KX8 4KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP TSSOP TSSOP SOP DIP DIP SOP SOP
封装等效代码 SOP8,.25 TSSOP8,.25 TSSOP8,.25 SOP8,.25 DIP8,.3 DIP8,.3 SOP8,.3 SOP8,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE
并行/串行 SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL SERIAL
峰值回流温度（摄氏度） 260 260 240 240 240 260 240 260
电源 2/3.3 V 2/3.3 V 2/3.3 V 2/3.3 V 2/3.3 V 2/3.3 V 2/3.3 V 2/3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.75 mm 1.1 mm 1.1 mm 1.75 mm 4.57 mm 4.57 mm 1.75 mm 1.75 mm
串行总线类型 I2C I2C I2C I2C I2C I2C I2C I2C
最大待机电流 9e-7 A 9e-7 A 9e-7 A 9e-7 A 9e-7 A 9e-7 A 9e-7 A 9e-7 A
最大压摆率 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA 0.003 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES NO NO YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 MATTE TIN MATTE TIN Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) MATTE TIN Tin/Lead (Sn/Pb) MATTE TIN
端子形式 GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING
端子节距 1.27 mm 0.65 mm 0.65 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 NOT SPECIFIED NOT SPECIFIED 30 30 40 30 40
宽度 3.9 mm 3 mm 3 mm 3.9 mm 7.62 mm 7.62 mm 3.9 mm 3.9 mm
最长写入周期时间 (tWC) 5 ms 5 ms 5 ms 5 ms 5 ms 5 ms 5 ms 5 ms
写保护 HARDWARE HARDWARE HARDWARE HARDWARE HARDWARE HARDWARE HARDWARE HARDWARE
厂商名称 Catalyst - Catalyst - - Catalyst Catalyst Catalyst
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