CGH35030F
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically for high efficiency, high gain and wide bandwidth capabilities,
which makes the CGH35030F ideal for 3.3-3.9GHz WiMAX and BWA amplifier
applications. The transistor is supplied in a ceramic/metal flange package.
Package Type
: 440166
PN: CGH3503
0F
Typical Performance Over 3.3-3.8GHz
(T
C
= 25˚C)
of Demonstration Amplifier
Parameter
Small Signal Gain
EVM at P
AVE
= 23 dBm
EVM at P
AVE
= 36 dBm
Drain Efficiency @ 36 dBm
Input Return Loss
3.3 GHz
11.6
2.42
1.97
20.8
12.3
3.4 GHz
11.8
2.26
1.74
21.9
8.5
3.5 GHz
11.8
2.09
1.68
23.5
6.1
3.6 GHz
12.0
2.11
1.79
25.4
5.4
3.7 GHz
12.4
2.13
2.01
27.4
6.1
3.8 GHz
13.0
2.38
2.37
29.1
9.0
Units
dB
%
%
%
dB
Note:
Measured in the CGH35030F-AMP amplifier circuit, under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix,
64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3,
PAR = 9.8 dB @ 0.01 % Probability on CCDF.
Features
•
•
3.3 - 3.9 GHz Operation
30 W Peak Power Capability
•
•
12 dB Small Signal Gain
4.0 W P
AVE
at < 2.0 % EVM
•
015
25 % Drain Efficiency at 4 W P
AVE
WiMAX Fixed Access 802.16-2004 OFDM
WiMAX Mobile Access 802.16e OFDMA
•
•
Rev 4.0 – May 2
Subject to change without notice.
www.cree.com/RF
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current
1
Soldering Temperature
2
Screw Torque
Thermal Resistance, Junction to Case
3
Case Operating Temperature
3
Symbol
V
DSS
V
GS
P
DISS
T
STG
T
J
I
GMAX
I
DMAX
T
S
Rating
84
-10, +2
14
-65, +150
225
4.0
3.0
245
60
4.8
-40, +150
Units
Volts
Volts
Watts
˚C
˚C
mA
A
˚C
in-oz
˚C/W
˚C
85˚C
25˚C
25˚C
Units
25˚C
25˚C
τ
R
θJC
T
C
Notes:
1
Current limit for long term, reliable operation.
2
Refer to the Application Note on soldering at
www.cree.com/RF/Documnet-Library
3
Measured for the CGH35030F at P
DISS
= 14 W
Electrical Characteristics (T
C
= 25˚C)
Characteristics
DC Characteristics
1
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current
Drain-Source Breakdown Voltage
V
GS(th)
V
GS(Q)
I
DS
V
BR
-3.8
–
5.8
120
-3.0
-2.7
7.0
–
-2.3
–
–
–
V
DC
V
DC
A
V
DC
V
DS
= 10 V, I
D
= 7.2 mA
V
DS
= 28 V, I
D
= 120 mA
V
DS
= 6.0 V, V
GS
= 2 V
V
GS
= -8 V, I
D
= 7.2 mA
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics
2,3
(T
C
= 25
˚
C, F
0
= 3.5 GHz unless otherwise noted)
Small Signal Gain
Drain Efficiency
4
Back-Off Error Vector Magnitude
Error Vector Magnitude
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Feedback Capacitance
C
GS
C
DS
C
GD
–
–
–
9.0
2.6
0.4
–
–
–
pF
pF
pF
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
V
DS
= 28 V, V
gs
= -8 V, f = 1 MHz
G
SS
η
10
20
–
–
–
11.5
25
2.5
2.0
–
–
–
–
–
10 : 1
dB
%
%
%
Y
V
DD
= 28 V, I
DQ
= 120 mA,
P
AVE
= 23 dBm
V
DD
= 28 V, I
DQ
= 120 mA,
P
AVE
= 36 dBm
V
DD
= 28 V, I
DQ
= 120 mA,
P
AVE
= 23 dBm
V
DD
= 28 V, I
DQ
= 120 mA,
P
AVE
= 36 dBm
No damage at all phase angles,
V
DD
= 28 V, I
DQ
= 120 mA
EVM
1
EVM
2
VSWR
Notes:
1
Measured on wafer prior to packaging.
2
Measured in the CGH35030F-AMP test fixture.
3
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate
Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4
Drain Efficiency = P
OUT
/ P
DC.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGH35030F Rev 4.0
Typical WiMAX Performance
Figure 1.- Gain and Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH35030F-AMP1
S21_V3_120 mA
V
DD
= 28 V, I
DQ
= 120 mA
14
13
12
11
10
9
S21
8
6
4
2
0
-2
S21 (dB)
7
6
5
4
3
2
1
0
3
3.1
3.2
3.3
3.4
3.5
S21
S11
3.6
3.7
3.8
3.9
4
4.1
4.2
S11
-6
-8
-10
-12
-14
-16
-18
-20
Frequency (GHz)
Figure 2.- Typical EVM and Efficiency at 23 dBm and 36 dBm vs Frequency measured
CGH35030
in Broadband Amplifier Circuit CGH35030F-AMP
6.0
5.5
5.0
4.5
4.0
Efficiency
36%
33%
30%
27%
24%
EVM @ 23 dBm
EVM @ 36 dBm
Efficiency @ 36 dBm
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.3
3.4
3.5
EVM
18%
15%
12%
9%
6%
3%
0%
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Frequency (GHz)
3.6
3.7
3.8
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGH35030F Rev 4.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Efficiency
EVM (%)
3.5
21%
S11 (dB)
8
-4
Typical WiMAX Performance
Figure 3.- Gain and Return Loss vs Frequency measured in Broadband Amplifier Circuit CGH35030F-AMP
V
DD
= 28
CGH35030F
V, I
DQ
= 120 mA
15
30%
28%
26%
24%
Gain
Efficiency
14
13
12
11
10
9
22%
20%
18%
16%
14%
12%
10%
Gain
Drain Efficiency
8%
6%
4%
2%
0%
8
7
6
5
4
3
2
1
0
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
Output Power (dBm)
5.2
4.8
4.4
4.0
3.6
3.2
Figure 4.- Typical EVM and Efficiency vs Frequency measured
CGH35030F
in Broadband Amplifier Circuit CGH35030F-AMP
26%
24%
EVM
Drain Efficiency
Efficiency
22%
20%
18%
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
EVM
14%
12%
10%
8%
6%
4%
2%
0%
Note:
Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prefix, 64 QAM Modulated
Burst, Symbol Length of 59, Coding Type RS-CC, Coding Rate Type 2/3, PAR =
9.8 dB @ 0.01 % Probability on CCDF.
Output Power (dBm)
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGH35030F Rev 4.0
Drain Efficiency
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
16%
EVM (%)
Drain Efficiency
Gain (dB)
Typical Performance
Figure 5.- Simulated Maximum Available Gain and K Factor of the CGH35030F
V
DD
= 28 V, I
DQ
= 120 mA
MAG (dB)
Typical Noise Performance
Figure 6.- Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH35030
V
DD
= 28 V, I
DQ
= 120 mA
Copyright © 2005-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGH35030F Rev 4.0
K Factor
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
