VISHAY
CNY117F
Vishay Semiconductors
No Base Connection Phototransistor Optocoupler
Features
• Breakdown Voltage, 5300 V
RMS
• No Base Terminal Connection for Improved Com-
mon Mode Interface Immunity
• Long Term Stability
• Industry Standard Dual-in-Line Package
• Ambient Temperature Range, 110 °C
A
C
NC
1
2
3
6 NC
5 C
4 E
Agency Approvals
• UL - File No. E52744 System Code H or J
• DIN EN 60747-5-5 (VDE 0884):2003-01 Available
with Option 1
18216
Description
The CNY117F is an optocoupler consisting of a Gal-
lium Arsenide infrared emitting diode optically cou-
pled to a silicon planar phototransistor detector in a
plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission
between two electrically separated circuits. The
potential difference between the circuits to be coupled
is not allowed to exceed the maximum permissible
reference voltages.
In contrast to the CNY117 Series, the base terminal
of the F type is not connected, resulting in a substan-
tially improved common-mode interference immunity.
Order Information
Part
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
Remarks
CTR 40 - 80 %, DIP
CTR 63 - 125 %, DIP
CTR 100 - 200 %, DIP
CTR 160 - 320 %, DIP
For additional order information see Option Section
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
DC forward current
Surge forward current
Power dissipation
Derate linearly from 25 °C
t
≤
10
µs
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
Value
6.0
60
2.5
100
1.0
Unit
V
mA
A
mW
mW/°C
Document Number 83598
Rev. 1, 29-Aug-03
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1
CNY117F
Vishay Semiconductors
Output
Parameter
Collector-emitter breakdown
voltage
Collector current
t
≤
1.0 ms
Total power dissipation
Derate linearly from 25 °C
Test condition
Symbol
BV
CEO
I
C
I
C
P
diss
Value
70
50
100
150
1.5
VISHAY
Unit
V
mA
mA
mW
mW/°C
Coupler
Parameter
Isolation test voltage (between
emitter and detector referred to
standard climate 23/50 DIN
50014)
Creepage
Clearance
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Soldering temperature
max. 10 s, dip soldering:
distance to seating plane
≥
1.5 mm
V
IO
= 500 V
R
IO
T
stg
T
amb
T
sld
Test condition
Symbol
V
IO
Value
5300
Unit
V
RMS
≥
7.0
≥
7.0
≥
0.4
175
≥
10
11
- 55 to + 150
- 55 to + 110
260
mm
mm
mm
Ω
°C
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Breakdown voltage
Reserve current
Capacitance
Test condition
I
F
= 60 mA
I
R
= 10
µA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
Symbol
V
F
V
BR
I
R
C
O
6.0
0.01
25
10
Min
Typ.
1.25
Max
1.65
Unit
V
V
µA
pF
Output
Parameter
Capacitance
Test condition
V
CE
= 5.0 V, f = 1.0 MHz
Symbol
C
CE
C
BC
C
EB
Min
Typ.
5.2
6.5
7.5
Max
Unit
pF
pF
pF
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2
Document Number 83598
Rev. 1, 29-Aug-03
VISHAY
Coupler
Parameter
Saturation voltage, collector-
emitter
Coupling capacitance
Collector-emitter leakage
current
V
CE
= 10 V
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
Test condition
I
F
= 10 mA, I
C
= 2.5 mA
Part
Symbol
V
CEsat
C
C
I
CEO
I
CEO
I
CEO
I
CEO
Min
CNY117F
Vishay Semiconductors
Typ.
0.25
0.6
2.0
2.0
5.0
5.0
Max
0.4
Unit
V
pF
50
50
100
100
nA
nA
nA
nA
Current Transfer Ratio
Current Transfer Ratio I
C
/I
F
at V
CE
= 5.0 V, 25 °C and Collector-Emitter Leakage Current by dash number
Parameter
Current Transfer Ratio
Test condition
I
F
= 10 mA
Part
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
I
F
= 1.0 mA
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
Symbol
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
Min
40
63
100
160
13
22
34
56
30
45
70
90
Typ.
Max
80
125
200
320
Unit
%
%
%
%
%
%
%
%
Switching Characteristics
Linear operation (without saturation)
Parameter
Turn-on time
Rise time
Turn-off time
Fall time
Cut-off frequency
Test condition
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75 W
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75 W
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75 W
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75 W
I
F
= 10 mA, V
CC
= 5.0 V,
R
L
= 75 W
Test condition
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5.0 mA
Rise time
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5.0 mA
Symbol
t
on
t
r
t
off
t
f
f
CO
Min
Typ.
3.0
2.0
2.3
2.0
250
Max
Unit
µs
µs
µs
µs
kHz
Switching operation (with saturation)
Parameter
Turn-on time
Part
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
Symbol
t
on
t
on
t
on
t
on
t
r
t
r
t
r
t
r
Min
Typ.
3.0
4.2
4.2
6.0
2.0
3.0
3.0
4.6
Max
Unit
µs
µs
µs
µs
µs
µs
µs
µs
Document Number 83598
Rev. 1, 29-Aug-03
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3
CNY117F
Vishay Semiconductors
Parameter
Turn-off time
Test condition
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5.0 mA
Fall time
I
F
= 20 mA
I
F
= 10 mA
I
F
= 5.0 mA
Part
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
CNY117F-1
CNY117F-2
CNY117F-3
CNY117F-4
Symbol
t
off
t
off
t
off
t
off
t
f
t
f
t
f
t
f
Min
Typ.
18
23
23
25
11
14
14
15
VISHAY
Max
Unit
µs
µs
µs
µs
µs
µs
µs
µs
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
(TA = –25°C, VCE = 5.0 V)
IC/IF = f (IF)
I
F
R
L
=75
Ω
I
C
V
CC
=5 V
1
2
3
4
45
Ω
icny17f_01
icny17f_03
Figure 1. Linear Operation ( without saturation)
Figure 3. Current Transfer Ratio vs. Diode Current
(TA = 0°C, VCE = 5.0 V)
IC/IF = f (IF)
I
F
1 KΩ
V
CC
=5 V
1
2
3
4
47
Ω
icny17f_02
icny17f_04
Figure 2. Switching Operation (with saturation)
Figure 4. Current Transfer Ratio vs. Diode Current
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Document Number 83598
Rev. 1, 29-Aug-03
VISHAY
CNY117F
Vishay Semiconductors
200
(TA = 25°C, VCE = 5.0 V)
IC/IF = f (IF)
180
160
140
I C/ I F
T
a
= 110 C
V
CE
= 5 V
–4
120
100
80
60
40
20
0
0
1
2
3
4
5
6
7
8
9
10
–2
–1
–3
1
2
3
4
icny17f_05
17551
I
F
( mA )
Figure 5. Current Transfer Ratio vs. Diode Current
Figure 8. Current Transfer Ratio vs. Diode Current
300
(TA = 50°C, VCE = 5.0 V)
250
200
I C/ I F
–4
–3
I
F
= 10 mA
V
CE
= 5 V
150
100
50
–1
0
–60 –40 –20
0
20
40
60
80 100
–2
1
2
3
4
icny17f_06
17552
Temperature ( C )
Figure 6. Current Transfer Ratio vs. Diode Current
Figure 9. Current Transfer Ratio (CTR) vs. Temperature
(TA = 75°C, VCE = 5.0 V)
(TA = 25°C) IC = f (VCE)
1
2
3
4
icny17f_07
icny17f_09
Figure 7. Current Transfer Ratio vs. Diode Current
Figure 10. Output Characteristics CNY17F-2, -3
Document Number 83598
Rev. 1, 29-Aug-03
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5
