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CNY17F3M

Transistor Output Optocouplers Optocoupler Phototrans No Base

器件类别:光电子/LED    光电   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

器件标准:

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器件参数
参数名称
属性值
Brand Name
Fairchild Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Fairchild
零件包装代码
DIP
包装说明
DIP-6
针数
6
制造商包装代码
6LD, MDIP,OPTO,WHITE,.300 WIDE
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min
70 V
配置
SINGLE
当前传输比率-最小值
100%
标称电流传输比
100%
最大暗电源
50 nA
最大正向电流
0.06 A
最大正向电压
1.65 V
最大绝缘电压
7500 V
JESD-609代码
e3
安装特点
THROUGH HOLE MOUNT
元件数量
1
最大通态电流
0.05 A
最高工作温度
100 °C
最低工作温度
-40 °C
光电设备类型
TRANSISTOR OUTPUT OPTOCOUPLER
最大功率耗散
0.15 W
最长响应时间
0.00001 s
表面贴装
NO
端子面层
Matte Tin (Sn)
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www.onsemi.com.
Please
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CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
October 2014
CNY171M, CNY172M, CNY173M, CNY174M,
CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M,
MOC8106M
6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Features
High BV
CEO
: 70 V Minimum (CNY17XM, CNY17FXM,
Description
The CNY17XM, CNY17FXM, and MOC8106M devices
consist of a gallium arsenide infrared emitting diode
coupled with an NPN phototransistor in a dual in-line
package.
MOC8106M)
Closely Matched Current Transfer Ratio (CTR)
Minimizes Unit-to-Unit Variation
Current Transfer Ratio In Select Groups
Very Low Coupled Capacitance Along With
No Chip-to-Pin 6 Base Connection for Minimum Noise
Susceptability (CNY17FXM, MOC8106M)
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
– DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Package Outlines
Applications
Power Supply Regulators
Digital Logic Inputs
Microprocessor Inputs
Appliance Sensor Systems
Industrial Controls
Figure 1. Package Outlines
Schematics
ANODE 1
6 NC
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
CATHODE 2
5 COLLECTOR
NC 3
4 EMITTER
NC 3
4 EMITTER
CNY17F1M/2M/3M/4M
MOC8106M
CNY171M/2M/3M/4M
Figure 2. Schematics
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
< 150 V
RMS
< 300 V
RMS
Characteristics
I–IV
I–IV
55/100/21
2
175
Symbol
Parameter
Input-to-Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC
Input-to-Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
External Clearance
External Clearance (for Option TV, 0.4" Lead Spacing)
Value
1360
1594
850
6000
7
7
10
0.5
175
350
800
> 10
9
Unit
V
peak
V
peak
V
peak
V
peak
mm
mm
mm
mm
°C
mA
mW
Ω
V
PR
V
IORM
V
IOTM
DTI
T
S
I
S,INPUT
R
IO
Distance Through Insulation (Insulation Thickness)
Case Temperature
(1)
Input Current
(1)
Insulation Resistance at T
S
, V
IO
= 500 V
(1)
P
S,OUTPUT
Output Power
(1)
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
2
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
A
T
J
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
DETECTOR
I
C
V
CEO
V
ECO
P
D
Storage Temperature
Parameters
Value
-40 to +125
-40 to +100
-40 to +125
260 for 10 seconds
270
2.94
60
6
1.5
120
1.41
50
70
7
150
1.76
Units
°C
°C
ºC
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mA
V
V
mW
mW/°C
Ambient Operating Temperature
Junction Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (1 µs pulse, 300 pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
Continuous Collector Current
Collector-Emitter Voltage
Emitter Collector Voltage
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
3
CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BV
CEO
Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Parameters
Test Conditions
EMITTER
I
F
= 10 mA
V
F
C
J
I
R
Input Forward Voltage
Capacitance
Reverse Leakage
Current
Breakdown Voltage
BV
CEO
BV
CBO
BV
ECO
I
CEO
I
CBO
C
CE
C
CB
C
EB
Collector-to-Emitter
Collector-to-Base
Emitter-to-Collector
Leakage Current
Collector-to-Emitter
Collector-to-Base
Capacitance
Collector-to-Emitter
Collector-to-Base
Emitter-to-Base
V
CE
= 0, f = 1 MHz
V
CB
= 0, f = 1 MHz
V
EB
= 0, f = 1 MHz
V
CE
= 10 V, I
F
= 0
V
CB
= 10 V, I
F
= 0
I
C
= 1 mA, I
F
= 0
I
C
= 10 µA, I
F
= 0
I
E
= 100 µA, I
F
= 0
I
F
= 60 mA
V
F
= 0 V, f = 1.0 MHz
V
R
= 6 V
Device
All Devices
CNY17XM,
CNY17FXM
All Devices
All Devices
Min.
1.0
1.0
Typ.
1.15
1.35
18
0.001
Max.
1.50
1.65
Units
V
V
pF
10
µA
DETECTOR
All Devices
CNY17XM
All Devices
All Devices
CNY17XM
All Devices
CNY17XM
CNY17XM
8
20
10
70
70
7
100
120
10
1
50
20
V
V
V
nA
nA
pF
pF
pF
Transfer Characteristics
Symbol
COUPLED
I
F
= 10 mA, V
CE
= 10 V
CTR
Current Transfer
Ratio
I
F
= 10 mA, V
CE
= 5 V
I
F
= 10 mA, V
CE
= 5 V
I
F
= 10 mA, V
CE
= 5 V
I
F
= 10 mA, V
CE
= 5 V
V
CE(SAT)
Collector-Emitter I
C
= 0.5 mA, I
F
= 5 mA
Saturation Voltage I
C
= 2.5 mA, I
F
= 10 mA
MOC8106M
CNY171M, CNY17F1M
CNY172M, CNY17F2M
CNY173M, CNY17F3M
CNY174M, CNY17F4M
MOC8106M
CNY17XM/CNY17FXM
50
40
63
100
160
150
80
125
200
320
0.4
%
%
%
%
%
V
Parameters
Test Conditions
Device
Min.
Typ.
Max. Units
©2006 Fairchild Semiconductor Corporation
CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2
www.fairchildsemi.com
4
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参数对比
与CNY17F3M相近的元器件有:CNY17F3SVM、CNY17F3VM、CNY17F3SM、CNY17F3SR2M、CNY17F3SR2VM。描述及对比如下:
型号 CNY17F3M CNY17F3SVM CNY17F3VM CNY17F3SM CNY17F3SR2M CNY17F3SR2VM
描述 Transistor Output Optocouplers Optocoupler Phototrans No Base Transistor Output Optocouplers Optocoupler Phototrans No Base Transistor Output Optocouplers Optocoupler Phototrans No Base Transistor Output Optocouplers Optocoupler Phototrans No Base Transistor Output Optocouplers Optocoupler Phototrans No Base Transistor Output Optocouplers Optocoupler Phototrans No Base
Brand Name Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合
厂商名称 Fairchild Fairchild Fairchild Fairchild Fairchild Fairchild
零件包装代码 DIP DIP DIP DIP DIP DIP
包装说明 DIP-6 SURFACE MOUNT, DIP-6 DIP-6 SURFACE MOUNT, DIP-6 SURFACE MOUNT, DIP-6 SURFACE MOUNT, DIP-6
针数 6 6 6 6 6 6
制造商包装代码 6LD, MDIP,OPTO,WHITE,.300 WIDE 6LD,MDIP,OPTO,WHITE,SURFACE MOUNT FORM 6LD, MDIP,OPTO,WHITE,.300 WIDE 6LD,MDIP,OPTO,WHITE,SURFACE MOUNT FORM 6LD,MDIP,OPTO,WHITE,SURFACE MOUNT FORM 6LD,MDIP,OPTO,WHITE,SURFACE MOUNT FORM
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 UL RECOGNIZED UL RECOGNIZED, VDE APPROVED UL RECOGNIZED, VDE APPROVED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED, VDE APPROVED
Coll-Emtr Bkdn Voltage-Min 70 V 70 V 70 V 70 V 70 V 70 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
标称电流传输比 100% 100% 100% 100% 100% 100%
最大暗电源 50 nA 50 nA 50 nA 50 nA 50 nA 50 nA
最大正向电流 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A 0.06 A
最大绝缘电压 7500 V 7500 V 7500 V 7500 V 7500 V 7500 V
JESD-609代码 e3 e3 e3 e3 e3 e3
元件数量 1 1 1 1 1 1
最高工作温度 100 °C 100 °C 100 °C 100 °C 100 °C 100 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
光电设备类型 TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
当前传输比率-最小值 100% - 100% 100% 100% 100%
最大正向电压 1.65 V - 1.65 V 1.65 V 1.65 V 1.65 V
安装特点 THROUGH HOLE MOUNT - THROUGH HOLE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT
最大通态电流 0.05 A - 0.05 A 0.05 A 0.05 A 0.05 A
最大功率耗散 0.15 W - 0.15 W 0.15 W 0.15 W 0.15 W
最长响应时间 0.00001 s - 0.00001 s 0.00001 s 0.00001 s 0.00001 s
表面贴装 NO - NO YES YES YES
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