Transmissive Photosensors (Photo lnterrupters)
CNZ1102
(ON1102)
, CNZ1108
(ON1108)
Photo Interrupters
CNZ1102
Unit: mm
For contactless SW, object detection
■
Overview
Mark for
indicating
LED side
Device
center
25.0
±0.35
3.0
±0.3
2-0.45
±0.2
3
4
13.0
±0.3
3.0
±0.2
•
Highly precise position detection: 1.2 mm
•
Large output current
•
Fast response: t
r
, t
f
=
4
µs
(typ.) (CNZ1102)
6
µs
(typ.) (CNZ1108)
•
Small output current variation against change in temperature
•
Small package used for saving mounting space (CNZ1108)
1: Anode
2: Cathode
3: Collector
4: Emitter
PISTR104-005 Package
(Note) * is dimension at the root of leads
6.2
±0.2
■
Features
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
R
I
F
P
D
Input (Light
Reverse voltage
emitting diode) Forward current
75
mW
V
2.5
±0.2
Power dissipation
*1
Output (Photo Collector-emitter voltage
transistor)
(Base open)
Emitter-collector voltage
Collector current
Collector power dissipation
*2
co
Temperature
Operating ambient temperature
an
ce
Note) *1: Input power derating ratio is 1.0 mW/°C at T
a
≥
25°C.
*2: Output power derating ratio is 1.33 mW/°C at T
a
≥
25°C.
/D
is
Storage temperature
M
Pl
e
Publication date: April 2004
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7.0 min.
2.5
±0.2
*9.6
±0.3
2-φ3.2
±0.2
19.0
±0.2
2
M
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CNZ1102 and CNZ1108 are a photocoupler in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as the
light detecting element. The two elements are arranged so as to face
each other, and objects passing between them are detected.
10.0
±0.2
CNZ1108
*2.54
±0.2
1
Unit: mm
Mark for indicating
LED side
13.0
±0.3
3.0
±0.2
3.5
±0.2
Rating
3
Unit
V
Device
Center
10.0
±0.2
50
mA
7.0 min.
4- 0.45
±0.2
V
CEO
V
ECO
I
C
P
C
30
5
*9.4
±0.3
*2.54
±0.2
2
3
V
20
mA
°C
100
mW
°C
T
opr
T
stg
−25
to
+85
−30
to
+100
1: Anode
2: Cathode
1
4
3: Collector
4: Emitter
PISTR104-006 Package
(Note) * is dimension at the root of leads
nt
in
Internal Connection
2
6.2
±0.2
ue
nt
en
ai
1
Note) The part numbers in the parenthesis show conventional part number.
SHG00027BED
3.0
±0.3
3
4
1
CNZ1102, CNZ1108
■
Electrical-Optical Characteristics
T
a
=
25°C
±
3°C
Parameter
Input
charac-
teristics
Output
charac-
teristics
Transfer
charac-
teristics
Forward voltage
Reverse current
Terminal capacitance
Collector-emitter cutoff current
(Base open)
Collector-emitter capacitance
Collector current
*2
Symbol
V
F
I
R
C
t
I
CEO
C
C
I
C
I
F
=
50 mA
V
R
=
3 V
V
R
=
0 V, f
=
1 MHz
V
CE
=
10 V
V
CE
=
10 V, f
=
1 MHz
V
CE
=
10 V, I
F
=
20 mA
I
F
=
50 mA, I
C
=
1 mA
I
F
=
50 mA, I
C
=
0.1 mA
V
CC
=
10 V, I
C
=
5 mA, R
L
=
100
Ω
V
CC
=
10 V, I
C
=
1 mA, R
L
=
100
Ω
t
f
V
CC
=
10 V, I
C
=
5 mA, R
L
=
100
Ω
V
CC
=
10 V, I
C
=
1 mA, R
L
=
100
Ω
4.0
6.0
4.0
6.0
µs
2.0
5
20.0
0.4
0.4
µs
50
200
Conditions
Min
Typ
1.2
Max
1.5
10
Unit
V
µA
pF
nA
pF
mA
V
Collector-emitter CNZ1102 V
CE(sat)
saturation voltage CNZ1108
Rise time
*1
CNZ1102
CNZ1108
t
r
Fall time
*1
CNZ1102
CNZ1108
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *1: Switching time measurement circuit
Sig. in
V
CC
(Input pulse)
(Output pulse)
90%
10%
t
r
t
f
t
r
: Rise time
t
f
: Fall time
Sig. out
50Ω
R
L
*2: Rank classification
Rank
I
C
(mA)
Q
2.0 to 5.0
R
4.0 to 10.0
S
7.0 to 20.0
No-rank
>
2.0
I
F
, I
C
T
a
60
60
I
F
50
50
I
F
V
F
T
a
=
25°C
10
2
I
C
I
F
V
CE
=
10 V
T
a
=
25°C
Forward current I
F
, collector current I
C
(mA)
40
40
Collector current I
C
(mA)
Forward current I
F
(mA)
10
30
I
C
20
30
1
20
10
−1
10
10
0
−25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
10
−2
10
−1
1
10
10
2
Ambient temperature T
a
(°C)
Forward voltage V
F
(V)
Forward current I
F
(mA)
2
SHG00027BED
CNZ1102, CNZ1108
V
F
T
a
1.6
10
2
I
C
V
CE
T
a
=
25°C
I
F
=
30 mA
160
∆I
C
T
a
V
CE
=
10 V
I
F
=
20 mA
Forward voltage V
F
(V)
1.2
Collector current I
C
(mA)
I
F
=
50 mA
10
20 mA
10 mA
1
Relative collector current
∆I
C
(%)
120
10 mA
0.8
80
0.4
10
−1
40
0
−40
0
40
80
10
−2
10
−1
1
10
10
2
0
−40
0
40
80
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Ambient temperature T
a
(°C)
I
CEO
T
a
Collector-emitter cutoff current (Base open) I
CEO
(µA)
10
10
3
t
r
I
C
V
CC
=
10 V
T
a
=
25°C
100
∆I
C
d
Criterion 0
d
1
10
2
10
−1
Relative collector current
∆I
C
(%)
80
Rise time t
r
(µs)
R
L
=
1 kΩ
10
500
Ω
100
Ω
(CNZ1108)
100
Ω
(CNZ1102)
1
Sig. in
V
CC
Sig. V
1
out
V
2
V
2
R
L
10
−1
90%
10%
60
10
−2
V
CE
=
24 V
10 V
40
10
−3
V
1
50
Ω
10
−4
−40
0
40
80
10
−1
10
−2
20
t
r
1
t
d
t
f
10
0
0
1
2
3
4
5
6
Ambient temperature T
a
(°C)
Collector current I
C
(mA)
Distance d (mm)
SHG00027BED
3
Caution for Safety
¢
This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
product. Follow related laws and ordinances for disposal. The product
should be excluded from general industrial waste or household garbage.
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
If you have any inquiries or questions about this book or our semiconductor products, please contact one
of our sales offices listed on the back or Semiconductor Company's Department.
