PROCESS
CPD106R
Schottky Diode
Schottky Diode Chip
PROCESS DETAILS
Die Size
Die Thickness
Anode Bonding Pad Area
Top Side Metalization
Back Side Metalization
8.3 x 8.3 MILS
3.9 MILS
5.4 x 5.4 MILS
Al - 30,000Å
Au - 12,000Å
GEOMETRY
GROSS DIE PER 5 INCH WAFER
251,364
PRINCIPAL DEVICE TYPE
CTLSH01-30
R0 (20-April 2011)
w w w. c e n t r a l s e m i . c o m
PROCESS
CPD106R
Typical Electrical Characteristics
R0 (20-April 2011)
w w w. c e n t r a l s e m i . c o m
