CR05AS-8
Thyristor
Low Power Use
REJ03G0348-0200
Rev.2.00
Mar.01.2005
Features
•
I
T (AV)
: 0.5 A
•
V
DRM
: 400 V
•
I
GT
: 100
µA
•
Non-Insulated Type
•
Planar Passivation Type
Outline
PLZZ0004CB-A
(Package name: SOT-89)
4
1
2
3
3
1
2, 4
1.
2.
3.
4.
Cathode
Anode
Gate
Anode
Applications
Solid state relay, strobe flasher, igniter, and hybrid IC
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Note1
DC off-state voltage
Note1
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Voltage class
8 (Mark CD)
400
500
320
400
320
Unit
V
V
V
V
V
Rev.2.00,
Mar.01.2005,
page 1 of 7
CR05AS-8
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2
t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
Tj
Tstg
—
Ratings
0.79
0.5
10
0.4
0.1
0.01
6
6
0.1
– 40 to +125
– 40 to +125
48
Unit
A
A
A
A
2
s
W
W
V
V
A
°C
°C
mg
Conditions
Commercial frequency, sine half wave
Note2
180° conduction, Ta = 57°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. With gate to cathode resistance R
GK
= 1 kΩ.
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-a)
Rated value
Min.
Typ.
Max.
—
—
0.1
—
—
0.1
—
—
0.2
1
—
—
—
—
—
—
—
—
1.9
0.8
—
100
Note3
3
70
Unit
mA
mA
V
V
V
µA
mA
°C/W
Test conditions
Tj = 125°C, V
RRM
applied
Tj = 125°C, V
DRM
applied,
R
GK
= 1 kΩ
Ta = 25°C, I
TM
= 1.5 A,
instantaneous value
Tj = 25°C, V
D
= 6 V,
Note4
I
T
= 0.1 A
Tj = 125°C, V
D
= 1/2 V
DRM
,
R
GK
= 1 kΩ
Tj = 25°C, V
D
= 6 V,
Note4
I
T
= 0.1 A
Tj = 25°C, V
D
= 12 V,
R
GK
= 1 kΩ
Junction to ambient
Note2
Notes: 2. Soldering with ceramic plate (25 mm
×
25 mm
×
t0.7 mm).
3. If special values of I
GT
are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
I
GT
(µA)
1 to 30
20 to 50
40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 1 kΩ resistance between the gate and
cathode.
4. I
GT
, V
GT
measurement circuit.
A1
I
GS
3V
DC
A3
R
GK
1
1kΩ
Switch
I
GT
A2
2
V1
V
GT
TUT
6V
DC
60Ω
Switch 1 : I
GT
measurement
Switch 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1kΩ)
Rev.2.00,
Mar.01.2005,
page 2 of 7
CR05AS-8
Performance Curves
Maximum On-State Characteristics
10
2
7
Ta = 25°C
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
Rated Surge On-State Current
Surge On-State Current (A)
9
8
7
6
5
4
3
2
1
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
10
–1
0
1
2
3
4
5
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
×
100 (%)
Gate Characteristics
10
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
–60 –40 –20 0 20 40 60 80 100 120 140
Typical Example
Gate Voltage (V)
10
1
V
FGM
= 6V
P
G(AV)
= 0.01W
V
GT
= 0.8V
P
GM
= 0.1W
10
0
I
GT
= 100µA
(Tj = 25°C)
V
GD
= 0.2V
I
FGM
= 0.1A
10
–1
10
–2
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
Gate Current (mA)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
1.0
0.9
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Distribution
Typical Example
Transient Thermal Impedance (°C/W)
Gate Trigger Voltage (V)
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
3
7
25
×
25
×
t0.7
5
Aluminum Board
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
10
–3
2 3 5 710
–2
2 3 5 710
–1
2 3 5 7 10
0
0
–40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Time (s)
Rev.2.00,
Mar.01.2005,
page 3 of 7
CR05AS-8
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
160
Maximum Average Power Dissipation
(Single-Phase Half Wave)
1.5
Average Power Dissipation (W)
Ambient Temperature (°C)
θ
= 30° 60° 90° 120°
180°
1.0
25
×
25
×
t0.7
140
Aluminum Board
120
100
80
60
40
20
0
0
0.2
θ
360°
Resistive,
inductive loads
Natural convection
0.5
θ
360°
Resistive,
inductive loads
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
θ
= 30°
60°
90°
180°
120°
0.4
0.6
0.8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Average Power Dissipation (W)
1.5
Ambient Temperature (°C)
90°
θ
= 30° 60° 120°
180°
25
×
25
×
t0.7
140
Aluminum Board
120
100
80
60
40
20
0
0
θ
θ
360°
Resistive loads
Natural convection
1.0
0.5
θ
θ
60°
θ
= 30°
0.2
0.4
120°
90°
0.6
360°
Resistive loads
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
180°
0.8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
160
Maximum Average Power Dissipation
(Rectangular Wave)
Average Power Dissipation (W)
1.5
Ambient Temperature (°C)
90° 180°
θ
= 30° 60° 120° 270°
DC
25
×
25
×
t0.7
140
Aluminum Board
120
100
80
60
θ
360°
1.0
Resistive, inductive loads
Natural convection
0.5
θ
360°
DC
40
20
0
0
0.2
θ
= 30° 60°
120°
90°
0.4
270°
180°
0.6
0.8
0
0
Resistive,
inductive loads
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Average On-State Current (A)
Rev.2.00,
Mar.01.2005,
page 4 of 7
CR05AS-8
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Gate to Cathode Resistance
120
100
80
60
40
20
0
10
–1
2 3 5 710
0
2 3 5 710
1
2 3 5 7 10
2
×
100 (%)
160
140
120
100
×
100 (%)
Typical Example
Typical Example
Tj = 125°C
R
GK
= 1kΩ
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
Breakover Voltage (R
GK
= rkΩ)
Breakover Voltage (R
GK
= 1kΩ)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
Junction Temperature (°C)
Gate to Cathode Resistance (kΩ)
×
100 (%)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
120
100
80
60
40
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
Holding Current vs.
Junction Temperature
Tj = 25°C
I
H
(25°C) = 1mA
I
GT
(25°C) = 25µA
Breakover Voltage (dv/dt = vV/µs)
Breakover Voltage (dv/dt = 1V/µs)
Holding Current (mA)
Distribution
Typical Example
#2
#1
Typical Example
20
# 1 I
GT
(25°C = 10µA)
# 2 I
GT
(25°C = 66µA)
Tj = 125°C, R
GK
= 1kΩ
0
10
0
2 3 5 710
1
2 3 5 7 10
2
2 3 5 7 10
3
10
–1
–60 –40 –20 0 20 40 60 80 100 120 140
Rate of Rise of Off-State Voltage (V/µs)
Junction Temperature (°C)
×
100 (%)
500
×
100 (%)
Holding Current vs.
Gate to Cathode Resistance
Typical Example
I
GT
(25°C) I
H
(1kΩ)
13µA
1.6mA
#1
59µA
1.8mA
#2
#1
300
#2
200
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
400
100
0
10
–1
2 3 5 7 10
0
2 3 5 710
1
2 3 5 710
2
Tj = 25°C
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Typical Example
Holding Current (R
GK
= rkΩ)
Holding Current (R
GK
= 1kΩ)
Gate to Cathode Resistance (kΩ)
Junction Temperature (°C)
Rev.2.00,
Mar.01.2005,
page 5 of 7
嵌入式系统
