CT60AM-18F
Insulated Gate Bipolar Transistor
REJ03G1374-0200
(Previous: MEJ02G0023-0101)
Rev.2.00
Jul 07, 2006
Features
•
V
CES
: 900 V
•
I
C
: 60 A
•
Integrated fast-recovery diode
Appearance Figure
RENESAS Package code: PRSS0004ZC-A
(Package name: TO-3PL)
2, 4
4
1
1
2
3
3
1 : Gate
2 : Collector
3 : Emitter
4 : Collector
Applications
Microwave oven, Electromagnetic cooking devices, Rice-cookers
Maximum Ratings
(Tc = 25°C)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulse)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
Symbol
V
CES
V
GES
V
GEM
I
C
I
CM
I
E
P
C
Tj
Tstg
Ratings
900
±25
±30
60
120
40
180
– 40 to +150
– 40 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Conditions
V
GE
= 0 V
Rev.2.00 Jul 07, 2006 page 1 of 5
CT60AM-18F
Electrical Characteristics
(Tch = 25°C)
Parameter
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Turn-on Rise time
Turn-off delay time
Turn-off Fall time
Tail loss
Tail current
Emitter-collector voltage
Diode reverse recovery time
Thermal resistance (IGBT)
Thermal resistance (Diode)
Symbol
I
CES
I
GES
V
GE (th)
V
CE (sat)
Cies
Coes
Cres
t
d (on)
t
r
t
d (off)
t
f
E
tail
I
tail
V
EC
t
rr
R
th (j-c)
R
th (j-c)
Min.
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
4.0
2.1
4400
115
75
0.05
0.1
0.2
0.3
0.6
6.0
2.2
0.5
—
—
Max.
1
0.5
6.0
2.7
—
—
—
—
—
—
—
1.0
12
3.0
2.0
0.69
4.0
Unit
mA
µA
V
V
pF
pF
pF
µs
µs
µs
µs
mJ/pls
A
V
µs
°C/W
°C/W
I
E
= 60 A, V
GE
= 0 V
I
E
= 60 A, d
iS
/d
t
= –20 A/µs
Junction to case
Junction to case
Test conditions
V
CE
= 900 V, V
GE
= 0 V
V
GE
=
±20
V, V
CE
= 0 V
V
CE
= 10 V, I
C
= 6 mA
I
C
= 60 A, V
CE
= 15 V
V
CE
= 25 V, V
GE
= 0 V,
f = 1 MHz
V
CC
= 300 V, I
C
= 60 A,
V
GE
= 15 V, R
G
= 10
Ω
I
CP
= 60 A, Tj = 125°C,
d
v
/d
t
= 200 V/µs
Rev.2.00 Jul 07, 2006 page 2 of 5
CT60AM-18F
Performance Curves
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Collector Current vs.
Collector-Emitter Voltage (Typical)
160
Tc = 25°C
Pulse Test
V
GE
= 20V
15V 10V
9V
Collector-Emitter Saturation Voltage vs.
Gate-Emitter Voltage (Typical)
5
Tc = 25°C
Pulse Test
Collector Current I
C
(A)
PD = 180W
120
4
I
C
= 120A
60A
8V
3
80
7V
2
30A
15A
40
1
0
0
1
2
3
4
5
0
0
4
8
12
16
20
Collector-Emitter Voltage V
CE
(V)
Collector Current vs.
Gate-Emitter Voltage (Typical)
160
Tc = 25°C
V
CE
= 5V
Pulse Test
Gate-Emitter Voltage V
GE
(V)
Capacitance vs.
Collector-Emitter Voltage (Typical)
10
4
7
5
3
2
Cies
Collector Current I
C
(A)
120
Capacitance C (pF)
10
3
7
5
3
2
80
10
2
7
5
Coes
Tj =
25°C
3 V
GE
= 0V
2
f = 1MHz
40
Cres
0
0
4
8
12
16
10
1
10
-1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
10
3
Gate-Emitter Voltage V
GE
(V)
Collector-Emitter Voltage V
CE
(V)
Switching Characteristics (Typical)
10
3
7
5
Tj =
25°C
V
CC
= 300V
V
GE
= 15V
R
G
= 10Ω
Switching Time vs.
Gate Resistance (Typical)
10
4
7
5
3
2
Tj =
25°C
V
CC
= 300V
V
GE
= 15V
I
C
= 60A
Switching Time (ns)
3
2
td(off)
tf
Switching Time (ns)
10
3
7
5
3
2
td(off)
10
2
7
5
3
2
tr
tf
10
2
7
5
3
2
td(on)
tr
td(on)
10
1 0
10
2
3
5 7
10
1
2
3
5 7
10
2
10
1 0
10
2
3
5 7
10
1
2
3
5 7
10
2
Collector Current I
C
(A)
Gate Resistance R
G
(Ω)
Rev.2.00 Jul 07, 2006 page 3 of 5
CT60AM-18F
Gate-Emitter Voltage vs.
Gate Charge Characteristic (Typical)
20
100
I
C
= 60A
Tj =
25°C
V
CE
= 250V
Emitter Current vs.
Emitter-Collector Voltage (Typical)
T
C
=
25°C
V
GE
= 0V
Pulse Test
Gate-Emitter Voltage V
GE
(V)
16
Emitter Current I
E
(A)
600V
80
12
400V
60
8
40
4
0
20
0
50
100 150 200 250 300 350
0
0
0.8
1.6
2.4
3.2
Gate Charge Qg (nC)
Emitter-Collector Voltage V
EC
(V)
IGBT Transient Thermal
Impedance Characteristics
10
0
10
-4
2 3 5 7
10
-3
2 3 5 7
10
-3
2 3 5 7
10
-1
2 3 5 7
10
0
7
5
3
2
2
Gate-Emitter Threshold Voltage V
GE(th)
(V)
8
7
6
5
4
3
2
1
0
V
GE
= 0V
I
C
= 6mA
Transient Thermal Impedance Zth( j – c ) (°C/W)
Gate-Emitter Threshold Voltage vs.
Junction Temperature (Typical)
10
–1
7
5
3
2
10
–1
7
5
3
2
10
–2
10
–2
5 7
10
–5
2 3 5 7
10
–4
–40
0
40
80
120
150
Junction Temperature Tj (°C)
Pulse Width tw (S)
Transient Thermal Impedance Zth( j – c ) (°C/W)
Diode Transient Thermal
Impedance Characteristics
10
1
7
5
3
2
7
5
3
2
10
-3
2 3 5 7
10
-2
2 3 5 7
10
-1
2 3 5 7
10
0
2 3 5 7
10
1
10
0
7
5
3
2
10
–1
7
5
3
2
10
–1
7
5
3
2
10
–2
10
–2
5 7
10
-5
2 3 5 7
10
-4
2 3 5 7
10
-3
Pulse Width tw (S)
Rev.2.00 Jul 07, 2006 page 4 of 5
CT60AM-18F
Package Dimensions
Package Name
TO-3PL*
JEITA Package Code
RENESAS Code
PRSS0004ZC-A
Previous Code
MASS[Typ.]
9.8g
Unit: mm
20Max
5
2
φ3.2
6
1
2
1
20.6Min
0.5
5.45 5.45
3
4.0
Ordering Information
Lead form
Standard packing
Quantity
Standard order code
Standard order
code example
CT60AM-18F
CT60AM-18F-AD
Straight type
Plastic Magazine (Tube)
25 Type name
Lead form
Plastic Magazine (Tube)
25 Type name – Lead forming code
Note: Please confirm the specification about the shipping in detail.
Rev.2.00 Jul 07, 2006 page 5 of 5
2.5
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