designed to meet the demanding issues for performance,
functionality, and cost goals of current and next
generation mobile infrastructure. It provides high
dynamic range performance in a low profile surface-
mount leadless package that measures 6 x 6 mm square.
Functionality includes RF amplification, frequency
conversion and IF amplification, while an integrated LO
driver amplifier powers the passive mixer. The MCM is
implemented with reliable and mature GaAs MESFET
and InGaP HBT technology.
Typical applications include frequency downconversion
used in CDMA/GSM/TDMA, CDMA2000, W-CDMA,
and EDGE 2.5G and 3G mobile base transceiver stations
for cellular frequency bands.
Functional Diagram
RF IN
GND
GND
IF THRU
GND
28
RF OUT 1
GND 2
N/C 3
GND 4
IF THRU 5
GND 6
RF/IF 7
27
26
25
24
23
22
21 IF OUT
GND
19 N/C
18 GND
17 BIAS
16 GND
15 LO IN
13
LO OUT
14
GND
IF IN
•
•
•
•
•
•
•
•
•
RF: 800 – 960 MHz
IF: 200 – 250 MHz
+37 dBm Output IP3
+20 dBm Output P1dB
5 dB Noise Figure
+5V Single supply operation
Pb-free 6mm 28-pin QFN package
Low-side LO configuration
Common footprint with other
PCS/UMTS versions
RF Amp
IF Amp
20 GND
IF Feedthru
Path
LO Driver Amp
RF/IF
LO
8
GND
9
N/C
10
GND
11
MIXLO
12
GND
Specifications
(1)
Parameters
RF Frequency Range
LO Frequency Range
IF Center Frequency Range
% Bandwidth around IF center frequency
IF Test Frequency
SSB Conversion Gain
Gain Drift over Temp (-40 to 85 °C)
Output IP3
Output IP2
Output 1dB Compression Point
Noise Figure
LO Input Drive Level
LO-RF Isolation
LO-IF Isolation
Return Loss: RF Port
Return Loss: LO Port
Return Loss: IF Port
Operating Supply Voltage
Supply Current
FIT Rating
Thermal Resistance
Junction Temperature
Units
MHz
MHz
MHz
%
MHz
dB
dB
dBm
dBm
dBm
dB
dBm
dB
dB
dB
dB
dB
V
mA
failures
/
1E9 hrs
°C
/ W
°C
Min
Typ
800 – 960
550 – 760
200 – 250
±7.5
240
22
±1.5
+37
+45
+20
5
0
60
40
15
10
15
+5
360
Max
Comments
See note 2
See note 3
Temp = 25 °C
Referenced to +25 °C
See note 4
See note 4
See note 5
-2.5
+2.5
See note 6
P
LO
= 0 dBm
+4.9
290
+5.1
480
72.1
27
160
@ 70
o
C ambient, 90% confidence
See note 7
1. Specifications when using the application specific circuit (shown on page 3) with a low side LO = 0 dBm in a downconverting application over the operating case temperature range.
2. IF matching components affect the center IF frequency. Proper component values for other IF center frequencies than shown can be provided by emailing to applications.engineering@wj.com.
3. The IF bandwidth of the converter is defined as 15% around any center frequency in its operating IF frequency range. The bandwidth is determined with external components. Specifications are valid around
the total ±7.5% bandwidth. ie. with a center frequency of 240 MHz, the specifications are valid from 240 ± 18 MHz.
4. Assumes the supply voltage = +5 V. OIP3 is measured with
∆f
= 1 MHz with IF
out
= 5 dBm / tone.
5. Assumes LO injection noise is filtered at the thermal noise floor, -174 dBm/Hz, at the RF, IF, and Image frequencies.
6. L-R Isolation is referenced to an LO injection of 0 dBm. The L-R performance shown also includes the isolation due to an external SAW filter between the RF amplifier and mixer.
7. The maximum junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Voltage
Junction Temperature
RF Input (continuous)
Rating
-40 to +85
°C
-55 to +125 °C
+6 V
+220 °C
+2 dBm
Ordering Information
Part No.
CV110-2AF
Description
Cellular-band High Linearity Downconverter
(lead-free/RoHS-compliant 6x6mm QFN package)
CV110-2APCB240 Fully Assembled Eval. Board, IF = 240MHz
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 4 April 2007
CV110-2A
Cellular-band High Linearity Downconverter
Device Architecture / Application Circuit Information
RF IN
GND
GND
IF THRU
GND
28
RF OUT 1
GND 2
N/C 3
GND 4
IF THRU 5
GND 6
RF/IF 7
27
26
25
24
IF IN
23
22
21 IF OUT
GND
Typical Downconverter Performance Chain Analysis
Stage
RF Amplifier
RF Filter
MMIC Mixer
IF Amplifier
CV110-2A
Gain
(dB)
Output
P1dB
(dBm)
Output
IP3
(dBm)
NF
(dB)
Current
(mA)
150
---
60
150
360
Cumulative Performance
Output Output
Gain
NF
P1dB
IP3
(dB)
(dB)
(dBm)
(dBm)
13.5
21.0
40.0
3.5
12.0
19.5
38.5
3.5
3.0
6.1
22.1
4.5
22.0
20.3
37.0
5.0
22.0
20.3
37.0
5.0
RF Amp
IF Amp
20 GND
19 N/C
IF Feedthru
Path
18 GND
LO Driver Amp
17 BIAS
16 GND
RF/IF
LO
8
GND
9
N/C
10
GND
11
MIXLO
12
GND
13
LO OUT
14
GND
15 LO IN
13.5
21
40.0
3.5
-1.5
---
---
1.5
-9.0
8
23.0
9.8
19.0
22
39.1
2.5
Cumulative Performance
RF Amp Matching
RF Amp Bias
IF Amp Matching
IF Amp Bias
RF Bandpass Filter /
Attenuator Pad
Printed Circuit Board Material:
.014” FR-4, 4 layers, .062” total thickness
LO Amp Bias
LO Amp Bias
RF / IF Diplexer
(used for cellular versions only)
CV110-2A:
The application circuit can be broken up into four main
functions as denoted in the colored dotted areas above: RF/IF
diplexing (purple), amplifier matching (green), filtering (red), and dc
biasing (blue). There are various placeholders for chip components in
the circuit schematic so that a common PCB can be used for all WJ
single-branch converters. Additional placeholders for other optional
functions such as filtering are also included.
RF / IF Amplifier Matching:
The RF amplifier requires a shunt
matching element for optimal gain and input return loss performance.
The IF amplifier requires matching elements to optimize the
performance of the amplifier to the desired IF center frequency.
Since IF bandwidths are typically on the order of 5 to 10%, a simple
two element matching network, in the form of either a high-pass or
low-pass filter structure, is sufficient to match the MMIC IF
amplifier over these narrow bandwidths. Proper component values
for other IF center frequencies can be provided by emailing to
applications.engineering@wj.com.
RF Bandpass Filtering:
Bandpass filtering is recommended to
reject the image frequencies and achieve the best noise figure
performance with the downconverter.
The bandpass filter,
implemented with a SAW filter on the application circuit, allows for
the suppression of noise from the image frequency. It is permissible
to not use a filter and use a 2 dB pad with R6, R7, and R16 instead
with slightly degraded noise figure performance. Standard WJ
evaluation boards will have the 2 dB pad in place.
External Diplexer:
In a downconversion application, the incoming
RF signal impinges on the switching elements of the mixer; the
interaction with these switches produces a signal at the IF frequency.
The two signals (RF and IF) are directed to the appropriate ports by
the external diplexer. Pin 5 contains the IF signal and allows the
signal to be transferred to pin 25 for the convenience of PCB layouts.
DC biasing:
DC bias must be provided for the RF, LO and IF
amplifiers in the converter. R1 sets the operating current for the last
stage of the LO amplifier and is chosen to optimize the mixer LO
drive level. Proper RF chokes and bypass capacitors are chosen for
proper amplifier biasing at the intended frequency of operation. The
“+5 V” dc bias should be supplied directly from a voltage regulator.
IF Amplifier Matching
Frequency (MHz)
L7 (nH)
C17 (pF)
R8 (ohms)
L4 (nH)
180
82
4.7
2.2
330
210
82
3.3
2.2
220
240
56
3.9
2.2
220
Specifications and information are subject to change without notice
全波整流电路如图Z0703所示。它是由次级具有中心抽头的电源变压器 Tr 、两个整流二极管D1、D2和负载电阻 R L组成 。变压器次级电压 u 21和 u 22大小相等，相位相反，即 u 21 = - u 22 = 式中， U 2 是变压器次级半边绕组交流电压的有效值。 全波整流电路的工作过程是：在 u 2 的正半周（ ωt = 0~π ）D1正偏导通，D2反偏截止， R L上 有自上而...[详细]
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