Cypress Developer Community ................................. 20
Technical Support ..................................................... 20
Document Number: 001-88316 Rev. *E
Page 3 of 20
CY62157H MoBL
®
Pin Configurations
Figure 1. 48-ball VFBGA (6 × 8 × 1mm) pinout
[2]
Figure 2. 48-pin TSOP I pinout (Dual Chip Enable)
[2, 3]
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
CE
2
NC
BHE
BLE
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
Vss
I/O15/A20
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
Vcc
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
Vss
CE
1
A0
Notes
2. NC pins are not connected internally to the die and are typically used for address expansion to a higher-density device. Refer to the respective datasheets for pin
configuration.
3. Tie the BYTE pin in the 48-pin TSOP I package to V
CC
to use the device as a 1 M × 16 SRAM. The 48-pin TSOP I package can also be used as a 2 M × 8 SRAM by
tying the BYTE signal to V
SS
. In the 2 M × 8 configuration, Pin 45 is the extra address line A20, while BHE, BLE, and I/O
8
to I/O
14
pins are not used and can be left
floating.
Document Number: 001-88316 Rev. *E
Page 4 of 20
CY62157H MoBL
®
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ............................... –65 °C to + 150 °C
Ambient temperature
with power applied .................................. –55 °C to + 125 °C
Supply voltage
to ground potential .............................. –0.2 V to V
CC
+ 0.3 V
DC voltage applied to outputs
in High Z state
[4]
................................. –0.2 V to V
CC
+ 0.3 V
DC input voltage
[4]
............................. –0.2 V to V
CC
+ 0.3 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(MIL-STD-883, Method 3015) ................................. >2001 V
Latch-up current ..................................................... >140 mA
Operating Range
Grade
Industrial
Ambient Temperature
–40
C
to +85
C
V
CC
2.2 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range of –40
C
to 85
C
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
I
SB1[6]
Description
Output HIGH
voltage
Output LOW
voltage
Input HIGH
voltage
Input LOW
voltage
[4]
2.2 V to 2.7 V
2.7 V to 3.6 V
2.2 V to 2.7 V
2.7 V to 3.6 V
2.2 V to 2.7 V
2.7 V to 3.6 V
2.2 V to 2.7 V
2.7 V to 3.6 V
Test Conditions
V
CC
= Min, I
OH
= –0.1 mA
V
CC
= Min, I
OH
= –1.0 mA
V
CC
= Min, I
OL
= 0.1 mA
V
CC
= Min, I
OL
= 2.1 mA
–
–
–
–
GND < V
IN
< V
CC
GND < V
OUT
< V
CC
, Output disabled
V
CC
= Max,
I
OUT
= 0 mA,
CMOS levels
f = f
MAX
f = 1 MHz
45 ns
Min
2
2.4
–
–
1.8
2
–0.3
–0.3
–1
–1
–
–
–
Typ
[5]
–
–
–
–
–
–
–
–
–
–
29.0
7.0
5.5
Max
–
–
0.4
0.4
V
CC
+ 0.3
V
CC
+ 0.3
0.6
0.8
+1
+1
36.0
9.0
16.0
A
A
mA
mA
A
V
V
V
Unit
V
Input leakage current
Output leakage current
V
CC
operating supply current
Automatic power down
current – CMOS inputs;
V
CC
= 2.2 to 3.6 V
CE
1
> V
CC
– 0.2 V or CE
2
< 0.2 V,
(BHE and BLE) > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V,
f = f
max
(address and data only),
f = 0 (OE, and WE), V
CC
= V
CC(max)
25 °C
[7]
40 °C
[7]
I
SB2[6]
Automatic power down
current – CMOS inputs
V
CC
= 2.2 to 3.6 V
CE
1
> V
CC
– 0.2 V or
CE
2
< 0.2 V,
–
–
–
5.5
6.3
12.0
[7]
6.5
8.0
16.0
A
(BHE and BLE) > V
CC
– 0.2 V, 85 °C
V
IN
> V
CC
– 0.2 V or
V
IN
< 0.2 V,
f = 0, V
CC
= V
CC(max)
Notes
4. V
IL(min)
= –2.0 V and V
IH(max)
= V
CC
+ 2 V for pulse durations of less than 20 ns.
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= 3 V (for V
CC
range of 2.2 V–3.6 V), T
A
= 25 °C.
6. Chip enables (CE
1
and CE
2
) must be tied to CMOS levels to meet the I
SB1
/ I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
7. The I
SB2
limits at 25 °C, 70 °C, 40 °C and typical limit at 85 °C are guaranteed by design and not 100% tested.
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