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D2019

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

器件类别：半导体    分立半导体   

厂商名称：SEME-LAB

厂商官网：http://www.semelab.co.uk

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参数 预览 参数对比
器件参数
参数名称
属性值
最小击穿电压
40 V
端子数量
8
加工封装描述
ROHS COMPLIANT, SOP-8
欧盟RoHS规范
Yes
状态
Active
壳体连接
SOURCE
结构
SINGLE
drain_current_max__abs___id_
10 A
最大漏电流
10 A
场效应晶体管技术
METAL-OXIDE SEMICONDUCTOR
最高频带
ULTRA HIGH FREQUENCY BAND
jesd_30_code
R-PDSO-G8
moisture_sensitivity_level
NOT SPECIFIED
元件数量
1
操作模式
ENHANCEMENT MODE
最大工作温度
200 Cel
包装材料
PLASTIC/EPOXY
包装形状
RECTANGULAR
包装尺寸
SMALL OUTLINE
eak_reflow_temperature__cel_
NOT SPECIFIED
larity_channel_type
N-CHANNEL
wer_dissipation_max__abs_
30 W
qualification_status
COMMERCIAL
sub_category
FET General Purpose Powe
表面贴装
YES
端子涂层
NOT SPECIFIED
端子形式
GULL WING
端子位置
DUAL
ime_peak_reflow_temperature_max__s_
NOT SPECIFIED
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
dditional_feature
LOW NOISE
文档预览
TetraFET
D1211UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A
N
8
D
1
2
C
B
P
7
6
5
3
4
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 12.5V – 500MHz
SINGLE ENDED
FEATURES
H
K
L
J
E
F
G
M
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
SO8 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
• VERY LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
P
mm
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.76
0.51
1.02
45°
0°
7°
0.20
2.18
4.57
Tol.
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
-0.00
Min.
Max.
Max.
Min.
Max.
±0.08
Max.
±0.08
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
45°
0°
7°
0.008
0.086
0.180
Tol.
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
-0.000
Min.
Max.
Max.
Min.
Max.
±0.003
Max.
±0.003
APPLICATIONS
•
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Semelab plc.
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
30W
40V
±20V
10A
–65 to 150°C
200°C
Prelim. 12/95
D1211UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV
DSS
I
DSS
I
GSS
g
fs
G
PS
η
C
iss
C
oss
C
rss
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0
V
DS
= 12.5V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 10W
V
DS
= 12.5V
f = 500MHz
V
DS
= 0V
V
GS
= –5V f = 1MHz
f = 1MHz
f = 1MHz
V
DS
= 12.5V V
GS
= 0
V
DS
= 12.5V V
GS
= 0
I
DQ
= 0.4A
I
D
= 10mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 1A
0.5
0.8
10
50
20:1
40
Typ.
Max. Unit
V
1
1
7
mA
µA
V
S
dB
%
—
60
40
4
pF
pF
pF
V
GS(th)
Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300
µs
, Duty Cycle
≤
2%
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 6°C / W
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 12/95
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参数对比
与D2019相近的元器件有：D1211、D1211UK、D2019UK、D2020UK。描述及对比如下：
型号 D2019 D1211 D1211UK D2019UK D2020UK
描述 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
最小击穿电压 40 V 40 V 40 V 40 V 40 V
端子数量 8 8 8 8 8
加工封装描述 ROHS COMPLIANT, SOP-8 ROHS COMPLIANT, SOP-8 ROHS COMPLIANT, SOP-8 ROHS COMPLIANT, SOP-8 ROHS COMPLIANT, SOP-8
欧盟RoHS规范 Yes Yes Yes Yes Yes
状态 Active Active Active Active Active
壳体连接 SOURCE SOURCE SOURCE SOURCE SOURCE
结构 SINGLE SINGLE SINGLE SINGLE SINGLE
drain_current_max__abs___id_ 10 A 10 A 10 A 10 A 10 A
最大漏电流 10 A 10 A 10 A 10 A 10 A
场效应晶体管技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
最高频带 ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
jesd_30_code R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
moisture_sensitivity_level NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
元件数量 1 1 1 1 1
操作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最大工作温度 200 Cel 200 Cel 200 Cel 200 Cel 200 Cel
包装材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
包装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
包装尺寸 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
eak_reflow_temperature__cel_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
larity_channel_type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
wer_dissipation_max__abs_ 30 W 30 W 30 W 30 W 30 W
qualification_status COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
sub_category FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe FET General Purpose Powe
表面贴装 YES YES YES YES YES
端子涂层 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL DUAL
ime_peak_reflow_temperature_max__s_ NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
dditional_feature LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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