STD790A
Medium current, high performance, low voltage PNP transistor
Features
■
■
■
■
■
Very low collector to emitter saturation voltage
DC current gain, h
FE
> 100
3 A continuous collector current
40 V breakdown voltage V
(BR)CER
Surface mounting DPAK (TO-252) power
package in tape and reel packing
Applications
■
■
■
■
Power management in portable equipment
Voltage regulation in bias supply circuits
Switching regulator in battery charger
applications
Heavy load driver
Figure 1.
Description
The device in manufactured in low voltage PNP
planar technology by using a “Base Island” layout.
The resulting transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
bs
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DPAK
(TO-252)
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Internal schematic diagram
Table 1.
Device summary
Marking
D790A
Package
DPAK
Packaging
Tape and reel
Order code
STD790AT4
June 2008
Rev 3
1/9
www.st.com
9
Electrical ratings
STD790A
1
Electrical ratings
Table 2.
Symbol
V
CBO
V
CER
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (R
BE
= 47
Ω)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
P
< 5 ms)
Total dissipation at T
c
= 25 °C
Storage temperature
Max. operating junction temperature
Value
-40
-40
-30
-5
-3
-6
Unit
V
V
V
Table 3.
Symbol
R
thj-case
Thermal data
Parameter
Thermal resistance junction-case
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
__max
r
P
d
o
15
uc
s)
t(
V
A
A
W
°C
°C
-65 to 150
150
Value
8.33
Unit
°C/W
2/9
STD790A
Electrical characteristics
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 4.
Symbol
I
CBO
Electrical characteristics
Parameter
Collector cut-off current
(I
E
= 0)
Emitter cut-off current
(I
C
= 0)
Test conditions
V
CB
= -30 V
V
CB
= -30 V;
V
EB
= -4 V
T
C
= 100 °C
Min.
Typ.
Max.
-10
-100
-10
Unit
µA
µA
µA
I
EBO
Collector-emitter
(1)
breakdown voltage
V
(BR)CEO
(I
B
= 0)
Collector-emitter
(1)
breakdown voltage
V
(BR)CER
(R
BE
= 47
Ω)
V
(BR)CBO
Collector-base
breakdown voltage
(I
E
= 0)
Emitter-base breakdown
voltage (I
C
= 0)
Collector-emitter
saturation voltage
I
C
= -10 mA
-30
I
C
= -10 mA
I
C
= -100 µA
V
(BR)EBO
V
CE(sat)
(1)
b
O
et
l
so
V
BE(sat) (1)
V
BE(on) (1)
ro
P
e
h
FE (1)
uc
d
)-
(s
t
I
E
= -100 µA
I
C
= -0.5 A
I
C
= -1.2 A
I
C
= -2 A
I
C
= -3 A
I
C
= -3 A
T
J
= 100 °C
I
C
= -1A
I
C
= -1 A
I
C
= -10 mA
I
C
= -500 mA
I
B
= -10 mA
V
CE
= -2 V
V
CE
= -2 V
V
CE
= -2 V
V
CE
= -2 V
V
CE
= -1 V
V
CE
= -1 V
I
B
= -5 mA
I
B
= -20 mA
I
B
= -20 mA
I
B
= -100 mA
I
B
= -100 mA
b
O
so
te
le
r
P
-5
-40
d
o
uc
s)
t(
V
V
-40
V
V
-0.15
-0.25
-0.5
-0.7
-0.9
-0.8
-0.8
-1
-1
400
400
V
V
V
V
V
V
V
Base-emitter saturation
voltage
Base-emitter on voltage
100
100
100
100
90
200
200
160
130
DC current gain
I
C
= -1 A
I
C
= -2 A
I
C
= -3 A
3/9
Electrical characteristics
Table 4.
Symbol
f
t
STD790A
Electrical characteristics (continued)
Parameter
Transition frequency
Resistive load
Delay time
Rise time
Storage time
Fall time
Test conditions
I
C
= -50 mA
f = 50 MHz
V
CE
= -5 V
Min.
Typ.
100
Max.
Unit
MHz
t
d
t
r
t
s
t
f
I
C
= -3 A
see
Figure 8
V
CC
= -20 V
180
160
250
80
220
210
300
100
ns
ns
ns
ns
I
B1
= -I
B2
= -60 mA
1.
Pulse duration = 300 µs, duty cycle
≤
1.5%
2.1
Electrical characteristics (curves)
Figure 2.
DC current gain
Figure 3.
b
O
et
l
so
Figure 4.
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
DC current gain
ro
P
uc
d
s)
t(
Collector-emitter saturation
voltage
Figure 5.
Base-emitter saturation
voltage
4/9
STD790A
Figure 6.
Switching time resistive load Figure 7.
Electrical characteristics
Switching time resistive load
2.2
Test circuit
Figure 8.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
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b
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t(
5/9
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