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DB105-G

Bridge Rectifiers VR=600V, IO=1A

器件类别:分立半导体    二极管   

厂商名称:Comchip Technology

厂商官网:http://www.comchiptech.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Comchip Technology
包装说明
R-PDIP-T4
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
UL RECOGNIZED
最小击穿电压
600 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
JESD-30 代码
R-PDIP-T4
最大非重复峰值正向电流
30 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大重复峰值反向电压
600 V
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
Glass Passivated Bridge Rectifiers
DB101-G Thru. DB107-G
Reverse Voltage: 50 to 1000V
Forward Current: 1.0A
RoHS Device
Features
-Rating to 1000V PRV.
-Ideal for printed circuit board.
-Low forward voltage drop.
~
~
-
DB
0.335(8.50)
0.307(7.80)
+
0.256(6.50)
0.244(6.20)
-High current capability.
-The plastic material has UL flammability
classification 94V-0
-UL recognized file # E349301
R
0.350(8.90)
0.300(7.60)
0.346(8.80)
0.323(8.20)
0.059(1.50)
Mechanical Data
-Polarity: As marked on Body.
-Weight: 0.38 grams.
-Mounting position: Any.
0.193(4.90)
0.155(3.90)
0.205(5.20)
0.197(5.00)
0.134(3.40)
0.124(3.15)
0.022(0.55)
0.018(0.45)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current @T
A
=40°C
Peak Forward Surge Current , 8.3ms Single
Half Sine-Wave Super Imposed On
Rated Load (JEDEC Method)
I t Rating For Fusing (t<8.3ms)
Maximum Forward Voltage At 1.0A DC
Maximum DC Reverse Current @T
J
=25°C
At Rated DC Blocking Voltage @T
J
=125°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
2
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
DB
101-G
50
35
50
DB
102-G
100
70
100
DB
103-G
200
140
200
DB
104-G
400
280
400
1.0
DB
105-G
600
420
600
DB
106-G
800
560
800
DB
107-G
1000
700
1000
Unit
V
V
V
A
I
FSM
2
30
3.735
1.1
10
500
25
40
-55 ~ +150
-55 ~ +150
A
A s
V
μA
pF
°C/W
°C
°C
2
I t
V
F
I
R
C
J
R
θJA
T
J
T
STG
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient mounted on P.C.B with 0.5"×0.5" (13×13mm) copper pads.
Company reserves the right to improve product design , functions and reliability without notice.
QW-BBR69
REV: C
Page 1
Comchip Technology CO., LTD.
Glass Passivated Bridge Rectifiers
Rating and Characteristics Curves (DB101-G Thru. DB107-G)
Fig.1 - Forward Current Derating Curve
1.0
10
Fig.2 - Typical Forward Characteristics
Instantaneous Forward Current, (A)
Average Forward Current, (A)
T
J
=25
O
C
Pulse width: 300μS
2% duty cycle
0.8
1.0
0.6
0.4
0.1
0.2
Mounted on PC board, single
phase half wave, 60Hz,
resistive or inductive load
0
0
50
100
150
0.01
0
0.2
0.4 0.6
0.8
1.0
1.2 1.4
1.6 1.8
Ambient Temperature, (°C)
Instantaneous Forward Voltage, (V)
Fig.3 - Maximum Non-repetitive Surge Current
50
100
Fig.4 - Typical Junction Capacitance
Peak Forward Surge Current, (A)
40
30
Capacitance, (pF)
10
20
10
Single half sine wave
(JEDEC method)
T
J
=25°C
f=1MHz
0
1
10
100
1
0.1
1
10
100
Number of Cycles at 60Hz
Reverse Voltage, (V)
Fig.5 - Typical Reverse Characteristics
Instantaneous Reverse Current, (μA)
100
T
J
=125°C
10
1.0
T
J
=25°C
0.1
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage, (%)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BBR69
REV: C
Page 2
Comchip Technology CO., LTD.
Glass Passivated Bridge Rectifiers
Marking Code
Part Number
DB101-G
DB102-G
DB103-G
DB104-G
DB105-G
DB106-G
DB107-G
Marking code
DB101
DB102
DB103
DB104
DB105
DB106
DB107
-
C
+
~
DBXXX
~
XXX = Product type marking code
C
= Comchip Logo
Standard Packaging
TUBE PACK
Case Type
TUBE
( pcs )
BOX
( pcs )
DB
50
2,500
Company reserves the right to improve product design , functions and reliability without notice.
QW-BBR69
REV: C
Page 3
Comchip Technology CO., LTD.
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参数对比
与DB105-G相近的元器件有:DB106-G、DB107-G。描述及对比如下:
型号 DB105-G DB106-G DB107-G
描述 Bridge Rectifiers VR=600V, IO=1A Operational Amplifiers - Op Amps Digital Isolators Quad Ch 1kV Isolator 150M 2/2
是否Rohs认证 符合 符合 符合
包装说明 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
最小击穿电压 600 V 800 V 1000 V
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
最大正向电压 (VF) 1.1 V 1.1 V 1.1 V
JESD-30 代码 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
最大非重复峰值正向电流 30 A 30 A 30 A
元件数量 4 4 4
相数 1 1 1
端子数量 4 4 4
最高工作温度 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C
最大输出电流 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大重复峰值反向电压 600 V 800 V 1000 V
表面贴装 NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 Comchip Technology Comchip Technology -
Base Number Matches - 1 1
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