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DBL202G

Bridge Rectifiers 2.0 Amp 100 Volt 50 Amp IFSM

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
R-PDIP-T4
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
UL RECOGNIZED
最小击穿电压
100 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
JESD-30 代码
R-PDIP-T4
JESD-609代码
e3
最大非重复峰值正向电流
50 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
100 V
表面贴装
NO
端子面层
Matte Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
DBL201G - DBL209G
Taiwan Semiconductor
CREAT BY ART
2A, 50V - 1400V Glass Passivated Bridge Rectifiers
FEATURES
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DBL
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Weight:
0.38 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 2 A
Maximum reverse current @ rated V
R
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θJL
R
θJA
T
J
T
STG
1.15
2
500
15
40
- 55 to +150
- 55 to +150
DBL
50
35
50
DBL
100
70
100
DBL
200
140
200
DBL
400
280
400
DBL
600
420
600
2.0
50
10.3
1.30
DBL
800
560
800
DBL
1000
700
1000
DBL
1200
840
1200
DBL
1400
980
1400
201G 202G 203G 204G 205G 206G 207G 208G 209G
UNIT
V
V
V
A
A
A
2
s
V
μA
°C/W
°C
°C
Document Number: DS_D1311014
Version: J15
DBL201G - DBL209G
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
DBL20xG
(Note 1)
*: Optional available
PACKING CODE
H
PACKING
CODE
C1
PACKING CODE
SUFFIX
G
(*)
PACKAGE
DBL
PACKING
50 / TUBE
Note 1: "x" defines voltage from 50V (DBL201G) to 1400V (DBL209G)
EXAMPLE
PREFERRED P/N
DBL207GHC1G
PART NO.
DBL207G
PART NO.
SUFFIX
H
PACKING CODE
C1
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
100
FIG.1 FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT (A)
2.5
2
1.5
1
0.5
0
0
20
40
60
80
100
120
140
160
AMBIENT TEMPERATURE (
o
C)
INSTANTANEOUS REVERSE CURRENT (μA)
10
T
J
=125°C
1
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
0.1
T
J
=25°C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT (A)
50
8.3ms Single Half Sine Wave
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
10
INSTANTANEOUS FORWARD CURRENT
(A)
DBL201G - DBL207G
1
DBL208G - DBL209G
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
FORWARD VOLTAGE (V)
1.8
2
Document Number: DS_D1311014
Version: J15
DBL201G - DBL209G
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
CAPACITANCE (pF)
A
10
f=1.0MHz
Vsig=50mVp-p
1
1
10
REVERSE VOLTAGE (V)
100
PACKAGE OUTLINE DIMENSIONS
DBL
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
Unit (mm)
Min
6.20
7.24
8.12
2.40
0.89
0.46
5.00
1.39
1.27
3.81
0.22
7.60
Max
6.50
8.00
8.51
2.60
1.14
0.58
5.20
1.90
2.03
4.69
0.33
8.90
Unit (inch)
Min
0.244
0.285
0.320
0.094
0.035
0.018
0.197
0.055
0.050
0.150
0.009
0.299
Max
0.256
0.315
0.335
0.102
0.045
0.023
0.205
0.075
0.080
0.185
0.013
0.350
MARKING DIAGRAM
P/N
G
YW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: DS_D1311014
Version: J15
DBL201G - DBL209G
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1311014
Version: J15
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参数对比
与DBL202G相近的元器件有:DBL206G、DBL209G、DBL201G。描述及对比如下:
型号 DBL202G DBL206G DBL209G DBL201G
描述 Bridge Rectifiers 2.0 Amp 100 Volt 50 Amp IFSM Bridge Rectifiers 2.0 Amp 800 Volt 50 Amp IFSM Bridge Rectifiers 2.0 Amp 1400 Volt 50 Amp IFSM Bridge Rectifiers 2.0 Amp 50 Volt 50 Amp IFSM
是否Rohs认证 符合 符合 符合 符合
包装说明 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
Reach Compliance Code compliant compliant compliant compliant
其他特性 UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
最小击穿电压 100 V 800 V 1400 V 50 V
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
JESD-609代码 e3 e3 e3 e3
最大非重复峰值正向电流 50 A 50 A 50 A 50 A
元件数量 4 4 4 4
相数 1 1 1 1
端子数量 4 4 4 4
最高工作温度 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
最大输出电流 2 A 2 A 2 A 2 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大重复峰值反向电压 100 V 800 V 1400 V 50 V
表面贴装 NO NO NO NO
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified -
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