DIODE MODULE
DD(KD)30HB120/160
UL;E76102 M
Power Diode Module
DD30HB
series are designed for various rectifier circuits.
DD30HB
has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to,
1,600V is avaiable for various input voltage.
Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
Unit
a
Maximum Ratings
Symbol
V
RRM
V
RSM
Symbol
I
F
AV
Tj 25
Item
Ratings
DD30HB120
1200
1350
Conditions
Single phase, half wave, 180 conduction, Tc 115
Single phase, half wave, 180 conduction, Tc 115
1
DD30HB160
1600
1700
Ratings
30
47
550/600
1500
40
150
40
125
2500
4.7 48
2.7 28
170
Unit
V
V
Unit
A
A
A
A
2
S
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I
2
t
Junction Temperature
Storage Temperature
Isolation Breakdown Voltage R.M.S.
Mounting
Torque
Mass
Mounting M6
Terminal M5
A.C.1minute
I
F (RMS)
I
FSM
I
2
t
Tj
Tstg
V
ISO
50/60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
2
cycle,
V
N m
f
B
g
Recommended Value 2.5 3.9 25 40
Recommended Value 1.5 2.5 15 25
Electrical Characteristics
Symbol
I
RRM
V
FM
Rth j-c
Item
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Thermal Impedance, max.
Conditions
at V
DRM
, single phase, half wave. Tj 150
Foward current 90A Tj 25
Junction to case
Inst. measurement
Ratings
10
1.50
0.80
Unit
mA
V
/W
69
DD(KD)30HB120/160
70
